scholarly journals Recombination Parameters of the Diffusion Region and Depletion Region for Crystalline Silicon Solar Cells under Different Injection Levels

2020 ◽  
Vol 10 (14) ◽  
pp. 4887
Author(s):  
Qiaoqiao Bai ◽  
Hong Yang ◽  
Xiaoli Cheng ◽  
He Wang
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Depletion Region ◽  
Back Surface ◽  
Diffusion Region ◽  
Injection Level ◽  
Crystalline Silicon Solar Cells ◽  
New Finding ◽  
Recombination Parameter

In order to maximize performance in all conditions of use, and to model exactly the performance of solar cells, it is very important to study the recombination parameters under different injection levels. In this paper, the recombination parameters and their effect on the output performance of solar cells are investigated under different injection levels for the full-area aluminum back surface field (Al-BSF) solar cell and passivated emitter and rear cell (PERC) solar cell for the first time. It is found that the recombination parameter J01 of the diffusion region and the recombination parameter J02 of the depletion region for the PERC solar cell are smaller than those of the Al-BSF solar cell under the same injection level. A new finding is that the recombination parameter J01 of Al-BSF solar cells increases quickly with the decreasing injection level compared with PERC solar cells. Finally, the J01/J02 of Al-BSF and PERC solar cells is investigated, and the effects of J01/J02 on the electrical parameters are also analyzed for Al-BSF and PERC solar cells under different injection levels. The obtained conclusions not only clarify the relationship between the recombination parameters and injection levels, but also help to improve cell processes and accurately model daily energy production.

scholarly journals PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells

2008 ◽  
Vol 2008 ◽  
pp. 1-10 ◽  
Author(s):  
M. Hofmann ◽  
S. Kambor ◽  
C. Schmidt ◽  
D. Grambole ◽  
J. Rentsch ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Internal Quantum Efficiency ◽  
Rear Surface ◽  
Chemical Vapour ◽  
Passivation Layer ◽  
Nuclear Reaction Analysis ◽  
Back Surface ◽  
Layer System

A novel plasma-enhanced chemical vapour deposited (PECVD) stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing) and below 30 cm/s (after forming gas anneal) were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages Voc values extracted from quasi-steady-state photoconductance (QSSPC) measurements above 680 mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF) and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA) has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages.

The Business of Fast ALD Equipment for Depositing Alumina Passivation Layers on Crystalline Silicon Solar Cells.

2011 ◽  
Vol 1353 ◽  
Author(s):  
Ad Vermeer ◽  
Roger Gortzen ◽  
P. Poodt ◽  
F. Roozeboom
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Throughput ◽  
Crystalline Silicon ◽  
Atomic Layer ◽  
Silicon Solar Cells ◽  
Alumina Layer ◽  
Solar Cell Efficiency ◽  
Crystalline Silicon Solar Cells ◽  
Cell Efficiency

ABSTRACTAtomic Layer Deposition (ALD) is a gas phase deposition technique for depositing very high quality thin films with an unsurpassed conformality. The main drawback of ALD however is the very low deposition rate (~ 1 nm/min). Recently, record deposition rates for alumina of up to 1 nm/s were reached using spatial ALD, while maintaining the typical assets regarding film quality as obtained by conventional, slow ALD [1]. This allows for ALD at high throughput numbers.One interesting application is passivation of crystalline silicon solar cells. Applying a thin alumina layer is reported to increase solar cell efficiency and enables the use of thinner wafers, thus reducing the main cost factor [2]. In this paper we report on the latest progress made by SoLayTec that delivered a working prototype of a system realizing full area single sided deposition of alumina on 156 x 156 mm2, mono- and multi crystalline silicon wafers for solar cell applications. The alumina layers showed excellent passivation. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/hr. Finally, we report on the process of commercializing this technology.

Characterization of Nanoporous Silicon Layer to Reduce the Optical Losses of Crystalline Silicon Solar Cells

2007 ◽  
Vol 7 (11) ◽  
pp. 3713-3716 ◽  
Author(s):  
Soohong Lee ◽  
Eunjoo Lee
Keyword(s):  
Surface Modification ◽  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Wavelength Region ◽  
Silicon Solar Cells ◽  
Porous Si ◽  
Optical Losses ◽  
Crystalline Silicon Solar Cells

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated using SEM. The formation of a nanoporous Si layer on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900 nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

Shape-Controllable Surface Texturization for Crystalline Silicon Solar Cells

2008 ◽  
Vol 1101 ◽  
Author(s):  
Jong-San Im ◽  
Jin-Wan Jeon ◽  
Koeng Su Lim
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Inductively Coupled Plasma ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Crystalline Silicon Solar Cells ◽  
Inductively Coupled ◽  
Polymer Dispersed Liquid Crystal ◽  
Polymer Dispersed

AbstractThis paper describes a new method to make surface textures for photovoltaic application. Using this method, we can make textures having various shapes. The first step is to make photo-resist (PR) molds using the polymer dispersed liquid crystal (PDLC) film. The second step is to transfer the PR molds to silicon by inductively coupled plasma etching process. The final step is a solar cell fabrication process. The structure of the solar cell is simple Al Grid/c-Si/Al back contact. The solar cells show the increase of the short circuit current (Jsc) comparing to the planar cells. By this texturing method, we can get solar cells having various textures which we want to make.

Influence of ITO layer application on electrical parameters of silicon solar cells with screen printed front electrode

2016 ◽  
Vol 33 (3) ◽  
pp. 172-175 ◽  
Author(s):  
Kazimierz Drabczyk ◽  
Jaroslaw Domaradzki ◽  
Grazyna Kulesza-Matlak ◽  
Marek Lipinski ◽  
Danuta Kaczmarek
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Performance ◽  
Silicon Solar Cells ◽  
Content Type ◽  
Crystalline Silicon Solar Cells ◽  
Screen Printed

Purpose The purpose of this paper was investigation and comparison of electrical and optical properties of crystalline silicon solar cells with ITO or TiO2 coating. The ITO, similar to TiO2, is very well transparent in the visible part of optical radiation; however, its low resistivity (lower that 10-3 Ohm/cm) makes it possible to use simultaneously as a transparent electrode for collection of photo-generated electrical charge carriers. This might also invoke increasing the distance between screen-printed metal fingers at the front of the solar cell that would increase of the cell’s active area. Performed optical investigation showed that applied ITO thin film fulfill standard requirements according to antireflection properties when it was deposited on the surface of silicon solar cell. Design/methodology/approach Two sets of samples were prepared for comparison. In the first one, the ITO thin film was deposited directly on the crystalline silicon substrate with highly doped emitter region. In the second case, the TCO film was deposited on the same type of silicon substrate but with additional ultrathin SiO2 passivation. The fingers lines of 80 μm width were then screen-printed on the ITO layer with two different spaces between fingers for each set. The influence of application of the ITO electrode and the type of metal electrodes patterns on the electrical performance of the prepared solar cells was investigated through optical and electrical measurements. Findings The electrical parameters such as short-circuit current (Jsc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency were determined on a basis of I-V characteristics. Short-circuit current density (Jsc) was equal to 32 mA/cm2 for a solar cell with a typical antireflection layer and 31.5 mA/cm2 for the cell with ITO layer, respectively. Additionally, electroluminescence of prepared cells was measured and analysed. Originality/value The influence of the properties of ITO electrode on the electrical performance of crystalline silicon solar cells was investigated through complex optical, electrical and electroluminescence measurements.

Review and Development of Crystalline Silicon Solar Cell with Intelligent Materials

2011 ◽  
Vol 321 ◽  
pp. 196-199
Author(s):  
Ying Lian Wang ◽  
Jun Yao Ye
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Clean Energy ◽  
Production Costs ◽  
Silicon Solar Cells ◽  
Human Society ◽  
Intelligent Materials ◽  
Crystalline Silicon Solar Cells ◽  
The Future

The application of solar cell has offered human society renewable clean energy. As intelligent materials, crystalline silicon solar cells occupy absolutely dominant position in photovoltaic market, and this position will not change for a long time in the future. Thereby increasing the efficiency of crystalline silicon solar cells, reducing production costs and making crystalline silicon solar cells competitive with conventional energy sources become the subject of today's PV market. The working theory of solar cell was introduced. The developing progress and the future development of mono-crystalline silicon (c-Si), poly-crystalline silicon (p-Si) and amorphous silicon (a-Si) solar cell have also been introduced.

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