Magnetization and Curie Temperature of As-deposited NiZn Ferrite Thin Films by Sputtering and Changes in Them by Heat Treatment

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

Journal of Materials Research ◽

10.1557/jmr.1992.3065 ◽

1992 ◽

Vol 7 (11) ◽

pp. 3065-3071 ◽

Cited By ~ 4

Author(s):

Peir-Yung Chu ◽

Isabelle Campion ◽

Relva C. Buchanan

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Phase Transformation ◽

Heating Rate ◽

Tetragonal Phase ◽

Monoclinic Phase ◽

Preferred Orientation ◽

Si Substrate ◽

Interfacial Diffusion ◽

Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

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The Structure and Magnetic Properties of NiZn-Ferrite Films Deposited by Magnetron Sputtering at Room Temperature

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.690-693.1702 ◽

2013 ◽

Vol 690-693 ◽

pp. 1702-1706 ◽

Cited By ~ 2

Author(s):

Shuang Jun Nie ◽

Hao Geng ◽

Jun Bao Wang ◽

Lai Sen Wang ◽

Zhen Wei Wang ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Magnetron Sputtering ◽

Saturation Magnetization ◽

Room Temperature ◽

Oxygen Flow ◽

Flow Ratio ◽

Study Results ◽

Ferrite Thin Films ◽

Ferrite Films

NiZn-ferrite thin films were deposited onto silicon and glass substrates by radio frequency magnetron sputtering at room temperature. The effects of the relative oxygen flow ratio on the structure and magnetic properties of the thin films were investigated. The study results reveal that the films deposited under higher relative oxygen flow ratio show a better crystallinity. Static magnetic measurement results indicated that the saturation magnetization of the films was greatly affected by the crystallinity, grain dimension, and cation distribution in the NiZn-ferrite films. The NiZn-ferrite thin films with a maximum saturation magnetization of 151 emucm-3, which is about 40% of the bulk NiZn ferrite, was obtained under relative oxygen flow ratio of 60%.

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Accelerating the formation of high-quality optical surface layer in ZnO thin films by the increase of heat-treatment temperature

Optik ◽

10.1016/j.ijleo.2021.166527 ◽

2021 ◽

Vol 232 ◽

pp. 166527

Author(s):

Haisu Qian ◽

Linhua Xu ◽

Fenglin Xian ◽

Jing Su ◽

Xiaoqiang Luo

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Surface Layer ◽

Heat Treatment Temperature ◽

Treatment Temperature ◽

Zno Thin Films ◽

Optical Surface ◽

High Quality

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