Nonequilibrium strain and Curie temperature in as-deposited Mn ferrite thin films by RF sputtering

1999 ◽  
Vol 35 (5) ◽  
pp. 3010-3012 ◽  
Author(s):  
T. Tanaka
2001 ◽  
Vol 79 (12) ◽  
pp. 1849-1851 ◽  
Author(s):  
Biao Zhou ◽  
Ya-Wen Zhang ◽  
Chun-Sheng Liao ◽  
Fu-Xiang Cheng ◽  
Chun-Hua Yan ◽  
...  

2019 ◽  
Vol 7 (17) ◽  
pp. 10696-10701 ◽  
Author(s):  
Fábio G. Figueiras ◽  
J. Ramiro A. Fernandes ◽  
J. P. B. Silva ◽  
Denis O. Alikin ◽  
Eugénia C. Queirós ◽  
...  

Thriving ferroelectric oxide Bi2ZnTiO6 thin films with a 1.48 eV optical gap.


2013 ◽  
Vol 690-693 ◽  
pp. 1702-1706 ◽  
Author(s):  
Shuang Jun Nie ◽  
Hao Geng ◽  
Jun Bao Wang ◽  
Lai Sen Wang ◽  
Zhen Wei Wang ◽  
...  

NiZn-ferrite thin films were deposited onto silicon and glass substrates by radio frequency magnetron sputtering at room temperature. The effects of the relative oxygen flow ratio on the structure and magnetic properties of the thin films were investigated. The study results reveal that the films deposited under higher relative oxygen flow ratio show a better crystallinity. Static magnetic measurement results indicated that the saturation magnetization of the films was greatly affected by the crystallinity, grain dimension, and cation distribution in the NiZn-ferrite films. The NiZn-ferrite thin films with a maximum saturation magnetization of 151 emucm-3, which is about 40% of the bulk NiZn ferrite, was obtained under relative oxygen flow ratio of 60%.


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