scholarly journals Spectroscopic Studies of Thin Film Electron Trapping Optical Memory Media (CaS: Eu, Sm)

2002 ◽  
Vol 2 (4) ◽  
pp. 220-223
Author(s):  
Dave M. Newman ◽  
Jianping Wu ◽  
Ian V. Viney
Keyword(s):  
Thin Film ◽  
Optical Memory ◽  
Spectroscopic Studies ◽  
Electron Trapping

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Optical memory in electron trapping materials

1994 ◽  
Author(s):  
Vladislav I. Zimenko ◽  
Viacheslav V. Petrov ◽  
Vasyliy G. Kravets ◽  
Vasily V. Motuz
Keyword(s):  
Optical Memory ◽  
Electron Trapping

The Birth of ECD: An Invention Factory (1965–1979)

2018 ◽  
pp. 123-146
Author(s):  
Lillian Hoddeson ◽  
Peter Garrett
Keyword(s):  
Thin Film ◽  
Phase Change Memory ◽  
Optical Memory ◽  
Memory Systems ◽  
Scientific Field ◽  
Practical Applications ◽  
Materials Research ◽  
Energy Conversion Devices ◽  
Development Laboratory ◽  
Change Memory

With new resources gained from licensing Ovshinsky’s discoveries, his company, renamed Energy Conversion Devices (ECD), expanded into an ambitious research and development laboratory. Its growing staff of highly trained scientists pursued both theoretical explanations and practical applications of the Ovshinsky effect, in the process helping to open the vast scientific field of materials research. Their first success was the optical phase-change memory that became the basis of rewritable CDs and DVDs. The new companies that ECD established circa 1970 to commercialize instant imaging and optical memory systems based on Ovshinsky’s new “Ovonic” proprietary materials did not succeed, however, and ECD struggled to survive. Its fortunes dramatically improved a decade later when its new photovoltaic program, aimed at developing and producing thin-film amorphous silicon solar cells in large quantities attracted major funding from the prominent oil corporation Atlantic Richfield (ARCO).

Structural and spectroscopic studies of thin film of silver nanoparticles

2011 ◽  
Vol 257 (24) ◽  
pp. 10607-10612 ◽  
Author(s):  
M.A. Majeed Khan ◽  
Sushil Kumar ◽  
Maqusood Ahamed ◽  
Salman A. Alrokayan ◽  
M.S. Alsalhi ◽  
...  
Keyword(s):  
Thin Film ◽  
Silver Nanoparticles ◽  
Spectroscopic Studies

scholarly journals Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

2016 ◽  
Vol 11 (9) ◽  
pp. 769-775 ◽  
Author(s):  
Tim Leydecker ◽  
Martin Herder ◽  
Egon Pavlica ◽  
Gvido Bratina ◽  
Stefan Hecht ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Optical Memory

Optical Memory Media Based on Excitation-Time Dependent Luminescence from a Thin Film of Semiconductor Nanocrystals

2000 ◽  
Vol 39 (Part 1, No. 7A) ◽  
pp. 4006-4012 ◽  
Author(s):  
Shinya Maenosono ◽  
Ceco Danov Dushkin ◽  
Soichiro Saita ◽  
Yukio Yamaguchi
Keyword(s):  
Thin Film ◽  
Semiconductor Nanocrystals ◽  
Optical Memory ◽  
Time Dependent ◽  
Excitation Time
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