scholarly journals Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

2016 ◽  
Vol 11 (9) ◽  
pp. 769-775 ◽  
Author(s):  
Tim Leydecker ◽  
Martin Herder ◽  
Egon Pavlica ◽  
Gvido Bratina ◽  
Stefan Hecht ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Optical Memory

scholarly journals Thin-Film Optical Devices Based on Transparent Conducting Oxides: Physical Mechanisms and Applications

Crystals ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 192 ◽  
Author(s):  
Jiung Jang ◽  
Yeonsu Kang ◽  
Danyoung Cha ◽  
Junyoung Bae ◽  
Sungsik Lee
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Transparent Conducting Oxide ◽  
Thin Film Transistor ◽  
Optical Memory ◽  
Wide Band ◽  
Optical Devices ◽  
Gate Insulator ◽  
Physical Mechanisms ◽  
Transparent Conducting

This paper provides a review of optical devices based on a wide band-gap transparent conducting oxide (TCO) while discussing related physical mechanisms and potential applications. Intentionally using a light-induced metastability mechanism of oxygen defects in TCOs, it is allowed to detect even visible lights, eluding to a persistent photoconductivity (PPC) as an optical memory action. So, this PPC phenomenon is naturally useful for TCO-based optical memory applications, e.g., optical synaptic transistors, as well as photo-sensors along with an electrical controllability of a recovery speed with gate pulse or bias. Besides the role of TCO channel layer in thin-film transistor structure, a defective gate insulator can be another approach for a memory operation with assistance for gate bias and illuminations. In this respect, TCOs can be promising materials for a low-cost transparent optoelectronic application.

Effect of transient behavior on off-state current in poly-Si junctionless nanowire thin-film transistor

2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Transient Behavior

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

Improved Thin-Film Transistor Performance Through a Melt of Poly(para-phenyleneethynylene)

2014 ◽  
Vol 35 (20) ◽  
pp. 1770-1775 ◽  
Author(s):  
Stefanie Schmid ◽  
Anne K. Kast ◽  
Rasmus R. Schröder ◽  
Uwe H. F. Bunz ◽  
Christian Melzer
Keyword(s):  
Thin Film ◽  
Thin Film Transistor

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

Thin film transistor based on graphene oxide for sensors

2020 ◽  
Author(s):  
Lalita Devi ◽  
Amodini Mishraand ◽  
Subhasis Ghosh
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Thin Film Transistor
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