Analysis of earthquake - induced strain effects in a recently urbanized alluvial valley (Rome)

2016 ◽  
Vol 41 ◽  
pp. 354-357
Author(s):  
Chiara Varone ◽  
Luca Lenti ◽  
Salvatore Martino
Keyword(s):  
Alluvial Valley ◽  
Strain Effects

Strain Effects on Oxygen Reduction Activity of Pr2NiO4 Caused by Gold Bulk Dispersion for Low Temperature Solid Oxide Fuel Cells

2019 ◽  
Vol 2 (2) ◽  
pp. 1210-1220 ◽  
Author(s):  
Sun Jae Kim ◽  
Taner Akbay ◽  
Junko Matsuda ◽  
Atsushi Takagaki ◽  
Tatsumi Ishihara
Keyword(s):  
Fuel Cells ◽  
Low Temperature ◽  
Solid Oxide Fuel Cells ◽  
Oxygen Reduction ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Strain Effects ◽  
Reduction Activity

scholarly journals Atomic-layered MoS2 on SiO2 under high pressure: Bimodal adhesion and biaxial strain effects

2017 ◽  
Vol 1 (2) ◽  
Author(s):  
R. S. Alencar ◽  
K. D. A. Saboia ◽  
D. Machon ◽  
G. Montagnac ◽  
V. Meunier ◽  
...  
Keyword(s):  
High Pressure ◽  
Biaxial Strain ◽  
Strain Effects ◽  
Layered Mos2

scholarly journals Strain effects on polycrystalline germanium thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Toshifumi Imajo ◽  
Takashi Suemasu ◽  
Kaoru Toko
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Growth Promotion ◽  
Large Strain ◽  
Compressive Strain ◽  
Substrate Material ◽  
Large Crystal ◽  
Solid Phase Crystallization ◽  
Strain Effects ◽  
Thin Film Devices

AbstractPolycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.

Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

2021 ◽  
pp. 2007862
Author(s):  
Chia‐Tse Tai ◽  
Po‐Yuan Chiu ◽  
Chia‐You Liu ◽  
Hsiang‐Shun Kao ◽  
C. Thomas Harris ◽  
...  
Keyword(s):  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Strain Effects ◽  
Rashba Spin

Raman characterization of phonon confinement and strain effects from latent ion tracks in α‐quartz

2021 ◽  
Author(s):  
Maria C. Garcia Toro ◽  
Miguel L. Crespillo ◽  
Jose Olivares ◽  
Joseph T. Graham
Keyword(s):  
Phonon Confinement ◽  
Strain Effects ◽  
Ion Tracks ◽  
Raman Characterization
Sign in / Sign up

Export Citation Format

Share Document