scholarly journals Low temperature polycrystalline silicon thin films and thin film transistors

2006 ◽  
Author(s):  
Junfeng Li
2000 ◽  
Vol 609 ◽  
Author(s):  
R.E.I. Schropp ◽  
J.K. Rath ◽  
B. Stannowski ◽  
C.H.M. Van Der Werf ◽  
Y. Chen ◽  
...  

ABSTRACTDirect deposition of polycrystalline silicon (poly-Si) thin films by the Hot Wire CVD method has been used for the first time for the fabrication of poly-Si top gate Thin Film Transistors (TFTs). The TFTs have a high electron mobility in saturation of up to 4 cm2V−1s−1 as well as a remarkably large ON/OFF ratio of up to 6 × 105.


2019 ◽  
Vol 3 (8) ◽  
pp. 173-178
Author(s):  
Yuta Sugawara ◽  
Y. Uraoka ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki ◽  
...  

2007 ◽  
Vol 46 (7A) ◽  
pp. 4021-4027 ◽  
Author(s):  
Hitoshi Ueno ◽  
Yuta Sugawara ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  

1999 ◽  
Vol 107 (1251) ◽  
pp. 1099-1104 ◽  
Author(s):  
Toshio KAMIYA ◽  
Yoshiteru MAEDA ◽  
Kouichi NAKAHATA ◽  
Takashi KOMARU ◽  
Charles M. FORTMANN ◽  
...  

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