scholarly journals An investigation on the optical properties of regioregular Poly(3-Hexylthiophene)

2014 ◽  
Vol 17 (2) ◽  
pp. 86-92
Author(s):  
Lam Le ◽  
Tuan Anh Luu
Keyword(s):  
Optical Properties ◽  
Optical Sensors ◽  
Field Effect Transistors ◽  
Gel Permeation Chromatography ◽  
Semiconducting Polymers ◽  
Organic Field Effect Transistors ◽  
Thermal Stabilities ◽  
Smart Windows ◽  
Regioregular Poly ◽  
Ft Ir

Among semiconducting polymers, poly(3-alkylthiophene)s have attracted great attention and generated many studies over the past few years. Among them, regioregular (head-to-tail) poly(3-hexylthiophene) (P3HT) has been especially investigated due to its superior opto-electronic properties, good solubility in the most common organic solvents, chemical and thermal stabilities and also very low toxicity. These properties enable P3HT to be significantly useful in a large variety of applications such as optical sensors, smart windows, organic field effect transistors (OFETs), electrochromic devices, and solar cells. Here, we report the synthesis of poly(3-hexylthiophene) (P3HT) and investigate the optical properties of P3HT in different solvents such as chloroform, tetrahydrofuran, toluene, ethylacetate. The structures of P3HT were confirmed by nuclear magnetic resonance (1H NMR), gel permeation chromatography (GPC), Fourier transform infrared (FT-IR).

scholarly journals The IR Spectra, Molar Absorptivity, and Integrated Molar Absorptivity of the C76-D2and C84-D2:22 Isomers

2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Tamara Jovanović ◽  
Đuro Koruga ◽  
Branimir Jovančićević
Keyword(s):  
Ir Spectra ◽  
Excellent Agreement ◽  
Field Effect Transistors ◽  
Molar Absorptivity ◽  
Ir Absorption ◽  
Organic Field Effect Transistors ◽  
Absorption Bands ◽  
Optical Limiters ◽  
Ft Ir

The FT-IR spectra of the stable C76and C84isomers of D2symmetry, isolated by the new, advanced extraction and chromatographic methods and processes, were recorded by the KBr technique, over the relevant region from 400 to 2000 cm−1, at room temperature. All the observed infrared bands are in excellent agreement with the semiempirical QCFF/PI, DFT, and TB potential calculations for these fullerenes, which is presented in this article, as the evidence of their validity. The molar absorptivityεand the integrated molar absorptivityψof their IR absorption bands were determined and reported together with the relative intensities. Excellent agreement is found between the relative intensities of the main and characteristic absorption maxima calculated fromελand from theψλvalues in adequate integration ranges. These results are significant for the identification and quantitative determination of the C76-D2and C84-D2:22 fullerenes, either in natural resources on Earth and in space or in artificially synthesized and biomaterials, electronic, optical, and biomedical devices, sensors, polymers, optical limiters, solar cells, organic field effect transistors, special lenses, diagnostic and therapeutic agents, pharmaceutical substances in biomedical engineering, and so forth.

scholarly journals New Approaches in Flexible Organic Field-Effect Transistors (FETs) Using InClPc

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1712 ◽  
Author(s):  
María Elena Sánchez-Vergara ◽  
Leon Hamui ◽  
Sergio González Habib
Keyword(s):  
Optical Properties ◽  
Indium Tin Oxide ◽  
Field Effect ◽  
Semiconductor Device ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Deposition Process ◽  
Device Fabrication ◽  
Organic Field Effect Transistors ◽  
Potential Applications

Organic semiconductor materials have been the center of attention because they are scalable, low-cost for device fabrication, and they have good optical properties and mechanical flexibility, which encourages their research. Organic field-effect transistors (OFETs) have potential applications, specifically in flexible and low-cost electronics such as portable and wearable technologies. In this work we report the fabrication of an InClPc base flexible bottom-gate/top-contact OFET sandwich, configured by the high-evaporation vacuum technique. The gate substrate consisted of a bilayer poly(ethylene terephthalate) (PET) and indium–tin oxide (ITO) with nylon 11/Al2O3. The device was characterized by different techniques to determine chemical stability, absorbance, transmittance, bandgap, optical properties, and electrical characteristics in order to determine its structure and operational properties. IR spectroscopy verified that the thin films that integrated the device did not suffer degradation during the deposition process, and there were no impurities that affected the charge mobility in the OFET. Also, the InClPc semiconductor IR fingerprint was present on the deposited device. Surface analysis showed evidence of a nonhomogeneous film and also a cluster deposition process of the InClPc. Using the Tauc model, the device calculated indirect bandgap transitions of approximately 1.67 eV. The device’s field effect mobility had a value of 36.2 cm2 V−1 s−1, which was superior to mobility values obtained for commonly manufactured OFETs and increased its potential to be used in flexible organic electronics. Also, a subthreshold swing of 80.64 mV/dec was achieved and was adequate for this kind of organic-based semiconductor device. Therefore, semiconductor functionality is maintained at different gate voltages and is transferred accurately to the film, which makes these flexible OFETs a good candidate for electronic applications.

High mobility organic field-effect transistors based on defect-free regioregular poly(3-hexylthiophene-2,5-diyl)

2016 ◽  
Vol 38 ◽  
pp. 89-96 ◽  
Author(s):  
Ali Nawaz ◽  
Michelle S. Meruvia ◽  
Dattatray L. Tarange ◽  
Sreelekha P. Gopinathan ◽  
Anshu Kumar ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Organic Field Effect Transistors ◽  
Regioregular Poly

Charge Injection in Regioregular Poly-(3-Hexythiophene) Organic Field-Effect Transistors with Different Metal Electrodes

2013 ◽  
Vol 873 ◽  
pp. 752-756
Author(s):  
Rui Rui Zhang ◽  
Shi Wei Lin ◽  
Jian Jun Liao
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Carrier Injection ◽  
Organic Field Effect Transistors ◽  
Drain Voltage ◽  
Metal Electrodes ◽  
Au Electrode ◽  
Regioregular Poly

Here we report on regioregular poly-(3-hexythiophene) (P3HT) organic field-effect transistors (OFETs) with various metal electrodes: pristine Au, pristine Cr, and Cr/Au. Compared to the performance of OFETs using different electrodes, the OFETs with Au electrode have better mobility (μ = 0.0090 cm2/Vs) and larger current at the same source-drain voltage and gate voltage. The enhancement of the device performance with Au electrode can be attributed to a small contact resistance and a small barrier height to P3HT for hole carrier injection.

scholarly journals Incorporating Cyano Groups to a Conjugated Polymer Based on Double B←N Bridged Bipyridine Unit for Unipolar n-Type Organic Field-Effect Transistors

2021 ◽  
Author(s):  
Jun Liu ◽  
Xu Cao ◽  
Yang Min ◽  
Hongkun Tian
Keyword(s):  
Conjugated Polymers ◽  
Conjugated Polymer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Levels ◽  
Semiconducting Polymers ◽  
Organic Field Effect Transistors ◽  
Strong Electron ◽  
Cyano Groups ◽  
P Type

The development of n-type semiconductors lags far behind that of their p-type counterparts, demonstrating the exploration of exclusive n-type π-conjugated polymers is significant. The double B←N bridged bipyridine (BNBP)-based polymers P-BNBP-TVT containing (E)-1,2-di(thiophen-2-yl)ethene (TVT) previously reported exhibits ambipolar character because of the electron-rich nature. Herein, we incorporated strong electron-withdrawing cyano groups into the 3,3’-positions of TVT moiety to a copolymer P-BNBP-2CNTVT to develop n-type π-conjugated polymers. The LUMO/HOMO energy levels of P-BNBP-2CNTVT are –3.80/–5.95 eV, respectively, which are ~0.4 eV lower than that of P-BNBP-TVT without cynao groups. Unsurprisingly, compared with ambipolar P-BNBP-TVT, the organic field‐effect transistors (OFETs) based on P-BNBP-2CNTVT showed unipolar n-type characteristics with an electron mobility of 0.026 cm2 V–1 s–1 and lower threshold voltage of ~25 V as well as high Ion/Ioff of ~105. This study demonstrates organoboron π-conjugated polymers could be regarded as a tool for constructing exclusive n-type semiconducting polymers used in OFETs.

scholarly journals Semiconducting/insulating polymer blends with dual phase separation for organic field-effect transistors

RSC Advances ◽  
2017 ◽  
Vol 7 (13) ◽  
pp. 7526-7530 ◽  
Author(s):  
Jung Hun Lee ◽  
Young Hun Lee ◽  
Yeon Hee Ha ◽  
Jaehyuk Kwon ◽  
Seungmoon Pyo ◽  
...  
Keyword(s):  
Phase Separation ◽  
Polymer Blends ◽  
Field Effect ◽  
Alkyl Chain ◽  
Field Effect Transistors ◽  
Semiconducting Polymers ◽  
Dual Phase ◽  
Organic Field Effect Transistors

DPP-based semiconducting polymers with different lengths of alkyl chain spacer were blended with PMMA for fabricating OFETs.

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