Thermal management in GaAs/AlGaAs laser diode structures

2007 ◽  
Author(s):  
Nihar Modi
Keyword(s):  
Thermal Management ◽  
Laser Diode

High Heat Flux Boiling Heat Transfer for Laser Diode Arrays

2016 ◽  
Author(s):  
Todd M. Bandhauer ◽  
Taylor A. Bevis
Keyword(s):  
Heat Transfer ◽  
Thermal Management ◽  
Laser Diode ◽  
Boiling Heat Transfer ◽  
Single Phase ◽  
Laser Diodes ◽  
Heat Fluxes ◽  
Transfer Coefficients ◽  
Heat Transfer Coefficients ◽  
Laser Diode Arrays

The principle limit for achieving higher brightness of laser diode arrays is thermal management. State of the art laser diodes generate heat at fluxes in excess of 1 kW cm−2 on a plane parallel to the light emitting edge. As the laser diode bars are packed closer together, it becomes increasingly difficult to remove large amounts of heat in the diminishing space between neighboring diode bars. Thermal management of these diode arrays using conduction and natural convection is practically impossible, and, therefore, some form of forced convective cooling must be utilized. Cooling large arrays of laser diodes using single-phase convection heat transfer has been investigated for more than two decades by multiple investigators. Unfortunately, either large fluid temperature increases or very high flow velocities must be utilized to reject heat to a single phase fluid, and the practical threshold for single phase convective cooling of laser diodes appears to have been reached. In contrast, liquid-vapor phase change heat transport can occur with a negligible increase in temperature and, due to a high enthalpy of vaporization, at comparatively low mass flow rates. However, there have been no prior investigations at the conditions required for high brightness edge emitting laser diode arrays: >1 kW cm−2 and >10 kW cm−3. In the current investigation, flow boiling heat transfer at heat fluxes up to 1.1 kW cm−2 was studied in a microchannel heat sink with plurality of very small channels (45 × 200 microns) using R134a as the phase change fluid. The high aspect ratio channels (4.4:1) were manufactured using MEMS fabrication techniques, which yielded a large heat transfer surface area to volume ratio in the vicinity of the laser diode. To characterize the heat transfer performance, a test facility was constructed that enabled testing over a range of fluid saturation temperatures (15°C to 25°C). Due to the very small geometric features, significant heat spreading was observed, necessitating numerical methods to determine the average heat transfer coefficient from test data. This technique is crucial to accurately calculate the heat transfer coefficients for the current investigation, and it is shown that the analytical approach used by many previous investigations requires assumptions that are inadequate for the very small dimensions and heat fluxes observed in the present study. During the tests, the calculated outlet vapor quality exceeded 0.6 and the base heat flux reached a maximum of 1.1 kW cm−2. The resulting experimental heat transfer coefficients are found to be as large a 58.1 kW m−2 K−1 with an average uncertainty of ±11.1%, which includes uncertainty from all measured and calculated values, required assumptions, and geometric discretization error from meshing.

scholarly journals Review of Issues and Solutions in High-Power Semiconductor Laser Packaging Technology

2021 ◽  
Vol 9 ◽  
Author(s):  
Yixiong Yan ◽  
Yu Zheng ◽  
Haigang Sun ◽  
Ji’an Duan
Keyword(s):  
Semiconductor Laser ◽  
Semiconductor Lasers ◽  
Thermal Management ◽  
Laser Diode ◽  
High Power ◽  
High Reliability ◽  
Beam Quality ◽  
Beam Shaping ◽  
Optical Components ◽  
Power Semiconductor

In the past 20 years, semiconductor lasers have been widely used in medical, industrial, and communication applications, providing a revolutionary and powerful platform for the fifth generation and advanced manufacturing. Semiconductor laser has the advantages of small size, lightweight, high reliability and easy modulation, becoming increasingly popular. However, due to the laser diode emission mechanism limitation, the beam quality is inferior and cannot be directly applied and required to be handled by beam shaping. However, the packaging of multiple beam shaping optical components is accompanied by risks due to misalignment. The misalignment error of the optical components has a great hidden danger to the laser performance. As semiconductor lasers' power gradually increases, lasers' thermal management technology is also increasingly strict. Therefore, this article first reviews the beam shaping technology of semiconductor laser diode array. Secondly, the analysis of the influence of the array semiconductor laser optical device's misalignment is reviewed, and a feasible solution is proposed. Finally, it summarizes the researches on thermal management in high-power semiconductor lasers. This article aims to give readers a comprehensive and broad understanding of semiconductor laser packaging's technical difficulties and to recognize each corresponding solution.

Gas-Cooled Laser Diode-Pumped Solid-State Laser Amplification Module Design and Thermal Management

2014 ◽  
Vol 41 (10) ◽  
pp. 1002001 ◽  
Author(s):  
徐鹏翔 Xu Pengxiang ◽  
李学春 Li Xuechun ◽  
王江峰 Wang Jiangfeng ◽  
黄文发 Huang Wenfa ◽  
彭宇杰 Peng Yujie ◽  
...  
Keyword(s):  
Solid State ◽  
Thermal Management ◽  
Laser Diode ◽  
Solid State Laser ◽  
State Laser ◽  
Module Design ◽  
Laser Amplification ◽  
Diode Pumped

scholarly journals A Review On Transient Thermal Management of Electronic Devices

2021 ◽  
Author(s):  
John Mathew ◽  
Shankar Krishnan
Keyword(s):  
Thermal Management ◽  
Laser Diode ◽  
High Power ◽  
Electronic Devices ◽  
Thermal Response ◽  
Heat Pipes ◽  
Design Guidelines ◽  
Thermal Design ◽  
Laser Diode Arrays ◽  
Transient Thermal

Abstract Much effort in the area of electronics thermal management has focused on developing cooling solutions that cater to steady-state operation. However, electronic devices are increasingly being used in applications involving time-varying workloads. These include microprocessors (particularly those used in portable devices), power electronic devices such as IGBTs, and high-power semiconductor laser diode arrays. Transient thermal management solutions become essential to ensure the performance and reliability of such devices. In this review, emerging transient thermal management requirements are identified, and cooling solutions reported in the literature for such applications are presented with a focus on time scales of thermal response. Transient cooling techniques employing actively controlled two-phase microchannel heat sinks, phase change materials (PCM), heat pipes/vapor chambers, combined PCM-heat pipes/vapor chambers, and flash boiling systems are examined in detail. They are compared in terms of their thermal response times to ascertain their suitability for the thermal management of pulsed workloads associated with microprocessor chips, IGBTs, and high-power laser diode arrays. Thermal design guidelines for the selection of appropriate package level thermal resistance and capacitance combinations are also recommended.

Thermal Management of Laser Diode Pumped Nd Doped Glass Disk Amplifier

2010 ◽  
Vol 39 (9) ◽  
pp. 1537-1542
Author(s):  
侯立群 HOU Li-qun ◽  
樊仲维 FAN Zhong-wei ◽  
邱基斯 QIU Ji-si ◽  
赵天卓 ZHAO Tian-zhuo ◽  
张晶 ZHANG Jing ◽  
...  
Keyword(s):  
Thermal Management ◽  
Laser Diode ◽  
Glass Disk ◽  
Diode Pumped ◽  
Doped Glass
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