scholarly journals Spectroscopic ellipsometry analysis of nanoporous low dielectric constant films processed via supercritical carbon dioxide for next-generation microelectronic devices

2007 ◽  
Author(s):  
Maslin Othman
Keyword(s):  
Carbon Dioxide ◽  
Dielectric Constant ◽  
Supercritical Carbon Dioxide ◽  
Spectroscopic Ellipsometry ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Low Dielectric ◽  
Microelectronic Devices ◽  
Supercritical Carbon

Repair of Porous Methylsilsesquioxane Films using Supercritical Carbon Dioxide

2004 ◽  
Vol 812 ◽  
Author(s):  
Bo Xie ◽  
Anthony J. Muscat
Keyword(s):  
Carbon Dioxide ◽  
Dielectric Constant ◽  
Fourier Transform ◽  
Supercritical Carbon Dioxide ◽  
Ftir Spectroscopy ◽  
Oxygen Plasma ◽  
Contact Angles ◽  
Silanol Groups ◽  
Chain Lengths ◽  
Supercritical Carbon

AbstractPorous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) were treated with alkyldimethylmonochlorosilanes having chain lengths of one, four, and eight carbon atoms dissolved in supercritical carbon dioxide at 150-300 atm and 50-60°C to repair oxygen ashing damage. Fourier transform infrared (FTIR) spectroscopy showed that trimethylchlorosilane (TMCS), butyldimethylchlorosilane (BDMCS), and octyldimethylchlorosilane (ODMCS) reacted with silanol groups on the surfaces of the pores producing covalent Si-O-Si bonds. Selfcondensation between alkylsilanols produced a residue on the surface, which was partially removed using a pure scCO2 rinse. The hydrophobicity of the blanket p-MSQ surface was recovered after silylation treatment as shown by contact angles >85°. The initial dielectric constant of 2.4 ± 0.1 increased to 3.5 ± 0.1 after oxygen plasma ashing and was reduced to 2.6 ± 0.1 by TMCS, 2.8 ± 0.1 by BDMCS, and 3.2 by ODMCS.

Measurement of the dielectric function spectra of low dielectric constant using the spectroscopic ellipsometry

2003 ◽  
Author(s):  
Masahiro Horie ◽  
Kamil Postava ◽  
Tomuo Yamaguchi ◽  
Kumiko Akashika ◽  
Hideki Hayashi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Low Dielectric Constant ◽  
Low Dielectric

Improved etching method for microelectronic devices with supercritical carbon dioxide

2009 ◽  
Vol 86 (2) ◽  
pp. 128-131 ◽  
Author(s):  
Jae Hyun Bae ◽  
Md. Zahangir Alam ◽  
Jae Mok Jung ◽  
Yeong-Soon Gal ◽  
Hyosan Lee ◽  
...  
Keyword(s):  
Carbon Dioxide ◽  
Supercritical Carbon Dioxide ◽  
Microelectronic Devices ◽  
Etching Method ◽  
Supercritical Carbon

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI'S

1999 ◽  
Vol 565 ◽  
Author(s):  
Hideki Gomi ◽  
Koji Kishimoto ◽  
Tatsuya Usami ◽  
Ken-ichi Koyanagi ◽  
Takashi Yokoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Process Integration ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Hydrogen Silsesquioxane ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Fluorinated Silicon Oxide ◽  
Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-μm and 0.18-μm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

HF Etchant Solutions in Supercritical Carbon Dioxide for “Dry” Etch Processing of Microelectronic Devices

2003 ◽  
Vol 15 (15) ◽  
pp. 2867-2869 ◽  
Author(s):  
Charles A. Jones ◽  
Dongxing Yang ◽  
Eugene A. Irene ◽  
Stephen M. Gross ◽  
Mark Wagner ◽  
...  
Keyword(s):  
Carbon Dioxide ◽  
Supercritical Carbon Dioxide ◽  
Microelectronic Devices ◽  
Dry Etch ◽  
Supercritical Carbon

Skeletal silica characterization in porous-silica low-dielectric-constant films by infrared spectroscopic ellipsometry

2005 ◽  
Vol 97 (11) ◽  
pp. 113504 ◽  
Author(s):  
Syozo Takada ◽  
Nobuhiro Hata ◽  
Yutaka Seino ◽  
Nobutoshi Fujii ◽  
Takamaro Kikkawa
Keyword(s):  
Dielectric Constant ◽  
Spectroscopic Ellipsometry ◽  
Porous Silica ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Infrared Spectroscopic
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