scholarly journals Megavoltage Topographic Imaging

2020 ◽  
Author(s):  
Keyword(s):  
2008 ◽  
Vol 47 (7) ◽  
pp. 6085-6087 ◽  
Author(s):  
Daisuke Sawada ◽  
Takashi Namikawa ◽  
Masuhiro Hiragaki ◽  
Yoshiaki Sugimoto ◽  
Masayuki Abe ◽  
...  

1999 ◽  
Vol 32 (26) ◽  
pp. 9067-9070 ◽  
Author(s):  
R. Andrew McMillan ◽  
Kevin L. Caran ◽  
Robert P. Apkarian ◽  
Vincent P. Conticello

2013 ◽  
Vol 110 (28) ◽  
pp. 11385-11390 ◽  
Author(s):  
H. Sanchez ◽  
A. Kertokalio ◽  
S. van Rossum-Fikkert ◽  
R. Kanaar ◽  
C. Wyman
Keyword(s):  

2004 ◽  
Vol 75 (10) ◽  
pp. 3276-3283 ◽  
Author(s):  
Tharshan Vaithianathan ◽  
Iain D. C. Tullis ◽  
Nicholas Everdell ◽  
Terence Leung ◽  
Adam Gibson ◽  
...  

1991 ◽  
Vol 25 (3-4) ◽  
pp. 181-196 ◽  
Author(s):  
William J. Landis ◽  
Janet Moradian-oldak ◽  
Stephen Weiner

1991 ◽  
Vol 35 (A) ◽  
pp. 247-253
Author(s):  
G.-D. Yao ◽  
J. Wu ◽  
T. Fanning ◽  
M. Dudley

AbstractWhite beam synchrotron X-ray topography has been applied both to the characterization of two semiconductor heterostructures, GaAs/Si and InxGa1-xAs/GaAs strained layers, and a substrate to be used for growing semiconductor epilayers, Cd1-xZnxTe. In the case of the heterostructures, misfit dislocations were observed using depth sensitive X-ray topographic imaging in grazing incidence Bragg-Laue geometries. The X-ray penetration depth, which can be varied from several hundreds of angstroms to hundreds of micrometers by rotating about the main reflection vector, which in this specific case was (355), is governed by kinernatical theory. This is justified by comparing dislocation contrast and visibility with the extent of the calculated effective misorientalion field in comparison to the effective X-ray penetration depth. For the case of Cd1-xZnxTe, twin configurations are observed, and their analysis is presented.


1990 ◽  
Vol 2 (3) ◽  
pp. 195-213 ◽  
Author(s):  
G.-D. Yao ◽  
M. Dudley ◽  
J. Wu

2019 ◽  
Vol 9 (15) ◽  
pp. 3086
Author(s):  
Lena Schnitzler ◽  
Markus Finkeldey ◽  
Martin R. Hofmann ◽  
Nils C. Gerhardt

The influence of the axial pinhole position in a confocal microscope in terms of the contrast of the image is analyzed. The pinhole displacement method is introduced which allows to increase the contrast for topographic imaging. To demonstrate this approach, the simulated data of a confocal setup as well as experimental data is shown. The simulated data is verified experimentally by a custom stage scanning reflective microscopy setup using a semiconductor test target with low contrast structures of sizes between 200 nm and 500 nm. With the introduced technique, we are able to achieve a contrast enhancement of up to 80% without loosing diffraction limited resolution. We do not add additional components to the setup, thus our concept is applicable for all types of confocal microscopes. Furthermore, we show the application of the contrast enhancement in imaging integrated circuits.


Micron ◽  
2019 ◽  
Vol 126 ◽  
pp. 102738 ◽  
Author(s):  
Jian Zhuang ◽  
Xiaobo Liao ◽  
Yalou Deng ◽  
Lei Cheng ◽  
Ali Akmal Zia ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document