scholarly journals Erasable Programmable Read Only Memory Device

2020 ◽  
Author(s):  
Keyword(s):  
Memory Device ◽  
Read Only Memory

Atmos—An electrically reprogrammable read-only memory device

1974 ◽  
Vol 21 (10) ◽  
pp. 631-636 ◽  
Author(s):  
J.F. Verwey ◽  
R.P. Kramer
Keyword(s):  
Memory Device ◽  
Read Only Memory

Thick‐Film Read‐Only Memory Device

1963 ◽  
Vol 34 (4) ◽  
pp. 1173-1174 ◽  
Author(s):  
R. E. Matick
Keyword(s):  
Thick Film ◽  
Memory Device ◽  
Read Only Memory

New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current

1994 ◽  
Vol 33 (Part 1, No. 5A) ◽  
pp. 2513-2514 ◽  
Author(s):  
Jyh-Kuang Lin ◽  
Chun-Yen Chang ◽  
Heng-Sheng Huang ◽  
Kun-Luh Chen ◽  
Dah-Chih Kuo
Keyword(s):  
Leakage Current ◽  
Memory Device ◽  
Read Only Memory ◽  
Nitride Oxide ◽  
Cell Leakage

Read and Write Operations of Memory Device Consisting of Nonlinear MEMS Resonator

2014 ◽  
Vol 1 ◽  
pp. 352-355 ◽  
Author(s):  
Atsushi YAO ◽  
Takashi HIKIHARA
Keyword(s):  
Memory Device ◽  
Mems Resonator

Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Memory Device ◽  
Confinement Effect ◽  
Film Polymer ◽  
Polymer Memory

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

Application of EMS Analysis to Failure in Cell Area of Memory Device

1998 ◽  
Author(s):  
T. Nukumizu ◽  
J. Sato ◽  
H. Furuya ◽  
H. Namba ◽  
T. Kikuch
Keyword(s):  
Failure Analysis ◽  
Memory Device ◽  
Cell Area

Abstract EMS analysis is widely used in the failure analysis of the semiconductor. Moreover, the availability is widely evaluated. However, EMS analysis is not often used for the defect (1 Bit failure, Word Line failure, Bit Line failure, etc.) in the cell area in the memory device, because information on Fail Bit Map can be facilitated. Recently, make minutely advancing, and it is impossible to detect the defective cause only by Fail Bit Map information. We found the effectiveness as follows by the use of EMS analysis for a defective sample with Fail Bit Map information to solve such a problem. It leads to shortening analysis TAT because a defective part can be specified. Moreover, because the SHORT/OPEN mode can be divided, it is useful for the presumption of a defective mode. Furthermore, it is effective also to the confirmation of the presence of the redundancy and the confirmation of Fail Bit Map. Thus, because the application of EMS analysis for the defect in the cell area of the memory device is very effective to detect a defective cause, I want to recommend it by all means.

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