Thick‐Film Read‐Only Memory Device

1963 ◽  
Vol 34 (4) ◽  
pp. 1173-1174 ◽  
Author(s):  
R. E. Matick
Keyword(s):  
Thick Film ◽  
Memory Device ◽  
Read Only Memory

Atmos—An electrically reprogrammable read-only memory device

1974 ◽  
Vol 21 (10) ◽  
pp. 631-636 ◽  
Author(s):  
J.F. Verwey ◽  
R.P. Kramer
Keyword(s):  
Memory Device ◽  
Read Only Memory

New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current

1994 ◽  
Vol 33 (Part 1, No. 5A) ◽  
pp. 2513-2514 ◽  
Author(s):  
Jyh-Kuang Lin ◽  
Chun-Yen Chang ◽  
Heng-Sheng Huang ◽  
Kun-Luh Chen ◽  
Dah-Chih Kuo
Keyword(s):  
Leakage Current ◽  
Memory Device ◽  
Read Only Memory ◽  
Nitride Oxide ◽  
Cell Leakage

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

Read and Write Operations of Memory Device Consisting of Nonlinear MEMS Resonator

2014 ◽  
Vol 1 ◽  
pp. 352-355 ◽  
Author(s):  
Atsushi YAO ◽  
Takashi HIKIHARA
Keyword(s):  
Memory Device ◽  
Mems Resonator

Fabrication of a Zn-Ferrite Thick Film Planar Power Inductor for DC-DC Converter LSI Package

2011 ◽  
Vol 131 (7) ◽  
pp. 484-489 ◽  
Author(s):  
Shinya Okazaki ◽  
Asako Takeuchi ◽  
Akihiro Takeshima ◽  
Makoto Sonehara ◽  
Toshiro Sato ◽  
...  
Keyword(s):  
Thick Film ◽  
Zn Ferrite ◽  
Power Inductor

Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Memory Device ◽  
Confinement Effect ◽  
Film Polymer ◽  
Polymer Memory
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