Effect of electromigration on diffusional creep in polycrystalline materials

2012 ◽  
Vol 40 (2) ◽  
pp. 165-171 ◽  
Author(s):  
Shan-Shan Shao ◽  
Fuqian Yang ◽  
Fu-Zhen Xuan
Keyword(s):  
Diffusional Creep ◽  
Polycrystalline Materials

The creep of thin beams under small bending moments

2006 ◽  
Vol 462 (2073) ◽  
pp. 2863-2875 ◽  
Author(s):  
V Srivastava ◽  
H Jones ◽  
G.W Greenwood
Keyword(s):  
Elevated Temperatures ◽  
High Stress ◽  
Diffusional Creep ◽  
Beam Deflection ◽  
Creep Process ◽  
Polycrystalline Materials ◽  
Bending Moments ◽  
Beam Geometry ◽  
Cantilevered Beams ◽  
Thin Beams

When polycrystalline materials deform at elevated temperatures under low applied stresses by the stress directed migration of vacancies, specific features need consideration in the bending of thin beams since a relatively high stress variation may arise across individual planar grain boundaries in addition to the variation that exists between boundaries of differing inclination. The features depend on grain and beam geometry and expressions are derived for their effect on the rate of deflection of cantilevered beams. Experiments were carried out on beams of high purity copper 100 and 250 μm thick. The cantilever profiles supported the theoretical approach and showed creep rates linearly dependent on stress at rates in accord with predictions based on a diffusional creep process. A further indication of this process was the associated strain localization that resulted in fracture of 100 nm thick alumina coatings applied to some of the beams. The analysis shows how relationships change as the beam thickness approaches the grain size and permits an evaluation of the rate of beam deflection under small bending moments in terms of grain and beam dimensions.

Observation of secondary slip systems in tungsten bicrystals

1984 ◽  
Vol 42 ◽  
pp. 478-479
Author(s):  
J. R. Fekete ◽  
R. Gibala
Keyword(s):  
Stress Field ◽  
Grain Boundaries ◽  
Deformation Behavior ◽  
Stress Axis ◽  
Polycrystalline Materials ◽  
Slip Systems ◽  
Metallic Materials ◽  
Twist Boundary ◽  
Secondary Slip ◽  
Plane Normal

The deformation behavior of metallic materials is modified by the presence of grain boundaries. When polycrystalline materials are deformed, additional stresses over and above those externally imposed on the material are induced. These stresses result from the constraint of the grain boundaries on the deformation of incompatible grains. This incompatibility can be elastic or plastic in nature. One of the mechanisms by which these stresses can be relieved is the activation of secondary slip systems. Secondary slip systems have been shown to relieve elastic and plastic compatibility stresses. The deformation of tungsten bicrystals is interesting, due to the elastic isotropy of the material, which implies that the entire compatibility stress field will exist due to plastic incompatibility. The work described here shows TEM observations of the activation of secondary slip in tungsten bicrystals with a [110] twist boundary oriented with the plane normal parallel to the stress axis.

The structure of amorphous and polycrystalline materials using energy-filtered RDF analysis

1992 ◽  
Vol 50 (2) ◽  
pp. 1190-1191
Author(s):  
David Cockayne ◽  
David McKenzie
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Density Function ◽  
Electron Diffraction Pattern ◽  
Polycrystalline Materials ◽  
Nearest Neighbour ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Reduced Density ◽  
System F

The technique of Electron Reduced Density Function (RDF) analysis has ben developed into a rapid analytical tool for the analysis of small volumes of amorphous or polycrystalline materials. The energy filtered electron diffraction pattern is collected to high scattering angles (currendy to s = 2 sinθ/λ = 6.5 Å-1) by scanning the selected area electron diffraction pattern across the entrance aperture to a GATAN parallel energy loss spectrometer. The diffraction pattern is then converted to a reduced density function, G(r), using mathematical procedures equivalent to those used in X-ray and neutron diffraction studies.Nearest neighbour distances accurate to 0.01 Å are obtained routinely, and bond distortions of molecules can be determined from the ratio of first to second nearest neighbour distances. The accuracy of coordination number determinations from polycrystalline monatomic materials (eg Pt) is high (5%). In amorphous systems (eg carbon, silicon) it is reasonable (10%), but in multi-element systems there are a number of problems to be overcome; to reduce the diffraction pattern to G(r), the approximation must be made that for all elements i,j in the system, fj(s) = Kji fi,(s) where Kji is independent of s.

Morphology and atomic structure of segregated grain boundaries in Cu-Sb

1992 ◽  
Vol 50 (1) ◽  
pp. 254-255
Author(s):  
R. W. Fonda ◽  
D. E. Luzzi
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Intergranular Fracture ◽  
Atomic Structure ◽  
Copper Alloys ◽  
Polycrystalline Materials ◽  
Grain Boundary Embrittlement ◽  
Boundary Embrittlement

The properties of polycrystalline materials are strongly dependant upon the strength of internal boundaries. Segregation of solute to the grain boundaries can adversely affect this strength. In copper alloys, segregation of either bismuth or antimony to the grain boundary will embrittle the alloy by facilitating intergranular fracture. Very small quantities of bismuth in copper have long been known to cause severe grain boundary embrittlement of the alloy. The effect of antimony is much less pronounced and is observed primarily at lower temperatures. Even though moderate amounts of antimony are fully soluble in copper, concentrations down to 0.14% can cause grain boundary embrittlement.

Interface structures in polycrystalline ceramic materials

1986 ◽  
Vol 44 ◽  
pp. 468-471
Author(s):  
K. J. Morrissey
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Physical And Mechanical Properties ◽  
High Resolution Electron Microscopy ◽  
Ceramic Materials ◽  
Polycrystalline Materials ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Interface Structures

Grain boundaries and interfaces play an important role in determining both physical and mechanical properties of polycrystalline materials. To understand how the structure of interfaces can be controlled to optimize properties, it is necessary to understand and be able to predict their crystal chemistry. Transmission electron microscopy (TEM), analytical electron microscopy (AEM,), and high resolution electron microscopy (HREM) are essential tools for the characterization of the different types of interfaces which exist in ceramic systems. The purpose of this paper is to illustrate some specific areas in which understanding interface structure is important. Interfaces in sintered bodies, materials produced through phase transformation and electronic packaging are discussed.

Electron diffraction studies of amorphous and polycrystalline thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 118-119
Author(s):  
D J H Cockayne ◽  
D R McKenzie
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Polycrystalline Materials ◽  
Good Resolution ◽  
Scattered Intensity ◽  
Radial Density ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Nitrogen Ion ◽  
Diffraction Patterns

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.

Parallel Glide: A Fundamentally Different Type of Dislocation Motion in Ultrathin Metal Films

2003 ◽  
Vol 779 ◽  
Author(s):  
T. John Balk ◽  
Gerhard Dehm ◽  
Eduard Arzt
Keyword(s):  
Thermal Cycling ◽  
Grain Boundaries ◽  
Film Surface ◽  
Metal Films ◽  
Geometric Constraints ◽  
Film Stress ◽  
Diffusional Creep ◽  
Creep Model ◽  
Substrate Interface ◽  
Film Substrate

AbstractWhen confronted by severe geometric constraints, dislocations may respond in unforeseen ways. One example of such unexpected behavior is parallel glide in unpassivated, ultrathin (200 nm and thinner) metal films. This involves the glide of dislocations parallel to and very near the film/substrate interface, following their emission from grain boundaries. In situ transmission electron microscopy reveals that this mechanism dominates the thermomechanical behavior of ultrathin, unpassivated copper films. However, according to Schmid's law, the biaxial film stress that evolves during thermal cycling does not generate a resolved shear stress parallel to the film/substrate interface and therefore should not drive such motion. Instead, it is proposed that the observed dislocations are generated as a result of atomic diffusion into the grain boundaries. This provides experimental support for the constrained diffusional creep model of Gao et al.[1], in which they described the diffusional exchange of atoms between the unpassivated film surface and grain boundaries at high temperatures, a process that can locally relax the film stress near those boundaries. In the grains where it is observed, parallel glide can account for the plastic strain generated within a film during thermal cycling. One feature of this mechanism at the nanoscale is that, as grain size decreases, eventually a single dislocation suffices to mediate plasticity in an entire grain during thermal cycling. Parallel glide is a new example of the interactions between dislocations and the surface/interface, which are likely to increase in importance during the persistent miniaturization of thin film geometries.

Ductility Limit Diagrams for Superplasticity and Forging of High Temperature Polycrystalline Materials

2020 ◽  
Author(s):  
Wei Zhang ◽  
Yanfei Gao ◽  
Zhili Feng ◽  
Xin Wang ◽  
Siyu Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Polycrystalline Materials
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