scholarly journals Disk Video Camera. 3. Recent Trends of Down Sized Large Capacity Disk. 3-2. Trend of High Density MD.

Author(s):  
Chiaki Nonaka
2005 ◽  
Author(s):  
Shiquan Tao ◽  
Zhuqing Jiang ◽  
Wei Yuan ◽  
Yuhong Wan ◽  
Ye Wang ◽  
...  

Nano Energy ◽  
2017 ◽  
Vol 34 ◽  
pp. 515-523 ◽  
Author(s):  
Liangsheng Hu ◽  
Xiang Peng ◽  
Yong Li ◽  
Lei Wang ◽  
Kaifu Huo ◽  
...  
Keyword(s):  

2020 ◽  
Vol 12 (9) ◽  
pp. 10211-10223 ◽  
Author(s):  
Anna K. Farquhar ◽  
Scott R. Smith ◽  
Colin Van Dyck ◽  
Richard L. McCreery

Author(s):  
Yasushi Sekine ◽  
Takuma Higo

AbstractConsidering the expansion of the use of renewable energy in the future, the technology to store and transport hydrogen will be important. Hydrogen is gaseous at an ambient condition, diffuses easily, and its energy density is low. So liquid organic hydrogen carriers (LOHCs) have been proposed as a way to store hydrogen in high density. LOHC can store, transport, and use hydrogen at high density by hydrogenation and dehydrogenation cycles. In this review, we will focus on typical LOHCs, methylcyclohexane (MCH), 18H-dibenzyltoluene (DBT), and 12H-N-ethylcarbazole (NECZ), and summarize recent developments in dehydrogenation catalytic processes, which are key in this cycle.


Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


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