scholarly journals A SINGLE-CRYSTAL SILICON RESONATOR FOR AM DEMODULATION WITH ADDED SECOND-HARMONIC MODULATION

2018 ◽  
Author(s):  
M.E. Galanko ◽  
Y.C. Lin ◽  
T. Mukherjee ◽  
G.K. Fedder
Keyword(s):  
Single Crystal ◽  
Second Harmonic ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Harmonic Modulation ◽  
Silicon Resonator

A comparison of Nd:YAG fundamental and second-harmonic Q-switched laser-beam lifetime doping in single-crystal silicon

1983 ◽  
Vol 30 (10) ◽  
pp. 1322-1326 ◽  
Author(s):  
D.L. Parker ◽  
Fa-Yong Lin ◽  
Shan-Ji Zhu ◽  
Ding-Kang Zhang ◽  
W.A. Porter
Keyword(s):  
Laser Beam ◽  
Single Crystal ◽  
Second Harmonic ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Beam Lifetime

Ultrasensitive mass balance based on a bulk acoustic mode single-crystal silicon resonator

2007 ◽  
Vol 91 (23) ◽  
pp. 234103 ◽  
Author(s):  
J. E.-Y. Lee ◽  
B. Bahreyni ◽  
Y. Zhu ◽  
A. A. Seshia
Keyword(s):  
Single Crystal ◽  
Mass Balance ◽  
Single Crystal Silicon ◽  
Acoustic Mode ◽  
Crystal Silicon ◽  
Silicon Resonator

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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