scholarly journals HIGH-SPEED, LARGE SCAN AREA, DISTORTION-FREE OPERATION OF SINGLE-CHIP ATOMIC FORCE MICROSCOPES

2016 ◽  
Author(s):  
G. Lee ◽  
N. Sarkar ◽  
D. Strathearn ◽  
M. Olfat ◽  
A. Bali ◽  
...  
Keyword(s):  
High Speed ◽  
Single Chip ◽  
Atomic Force Microscopes ◽  
Atomic Force ◽  
Area Distortion

scholarly journals Tip wear and tip breakage in high-speed atomic force microscopes

2019 ◽  
Vol 201 ◽  
pp. 28-37 ◽  
Author(s):  
Timo Strahlendorff ◽  
Gaoliang Dai ◽  
Detlef Bergmann ◽  
Rainer Tutsch
Keyword(s):  
High Speed ◽  
Atomic Force Microscopes ◽  
Atomic Force

scholarly journals High Speed, Large Scan Area, Distortion Free Operation of a Single-Chip Scanning Probe Microscope

2016 ◽  
Vol 22 (S3) ◽  
pp. 372-373
Author(s):  
N. Sarkar ◽  
G. Lee ◽  
D Strathearn ◽  
M. Olfat ◽  
R.R. Mansour
Keyword(s):  
High Speed ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
Single Chip ◽  
Probe Microscope ◽  
Area Distortion

scholarly journals Calibrating a high-speed contact-resonance profilometer

2020 ◽  
Vol 9 (2) ◽  
pp. 179-187
Author(s):  
Michael Fahrbach ◽  
Sebastian Friedrich ◽  
Brunero Cappella ◽  
Erwin Peiner
Keyword(s):  
Dynamic Behavior ◽  
High Speed ◽  
Large Scale ◽  
Atomic Force Microscopes ◽  
Atomic Force ◽  
Air Damping ◽  
Measurement Mode ◽  
Contact Resonance

Abstract. A European EMPIR project, which aims to use large-scale, 5 mm × 200 µm × 50 µm (L×W×H), piezoresistive microprobes for contact resonance applications, a well-established measurement mode of atomic force microscopes (AFMs), is being funded. As the probes used in this project are much larger in size than typical AFM probes, however, some of the simplifications and assumptions made for AFM probes are not applicable. This study presents a guide on how to systematically create a model that replicates the dynamic behavior of microprobes. The model includes variables such as air damping, nonlinear sensitivities, and frequency dependencies. The finished model is then verified by analyzing a series of measurements.

High-Speed Force Curve Measurement based on Atomic Force Observer

2017 ◽  
Vol 137 (10) ◽  
pp. 753-759
Author(s):  
Tomoki Enmei ◽  
Hiroshi Fujimoto ◽  
Yoichi Hori
Keyword(s):  
High Speed ◽  
Force Curve ◽  
Atomic Force

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

Electrical Probing and Surface Imaging of Deep Sub-Micron Integrated Circuits

1999 ◽  
Author(s):  
Kenneth Krieg ◽  
Richard Qi ◽  
Douglas Thomson ◽  
Greg Bridges
Keyword(s):  
High Resolution ◽  
Integrated Circuits ◽  
Real Time ◽  
High Speed ◽  
Time Signal ◽  
Surface Imaging ◽  
Atomic Force ◽  
Submicron Structures ◽  
High Resolution Images ◽  
Capacitive Loading

Abstract A contact probing system for surface imaging and real-time signal measurement of deep sub-micron integrated circuits is discussed. The probe fits on a standard probe-station and utilizes a conductive atomic force microscope tip to rapidly measure the surface topography and acquire real-time highfrequency signals from features as small as 0.18 micron. The micromachined probe structure minimizes parasitic coupling and the probe achieves a bandwidth greater than 3 GHz, with a capacitive loading of less than 120 fF. High-resolution images of submicron structures and waveforms acquired from high-speed devices are presented.

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