scholarly journals A LOW-POWER, LOW-LEAKAGE, BI-STABLE PLANAR ELECTROLYSIS MICRO GATE VALVE

2004 ◽  
Author(s):  
J.A. Frank ◽  
A.P. Pisano
Keyword(s):  
Low Power ◽  
Gate Valve ◽  
Low Leakage

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Low power aware pulse triggered flip flops using modified clock gating approaches

2018 ◽  
Vol 15 (6) ◽  
pp. 792-803
Author(s):  
Sudhakar Jyothula
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Average Power ◽  
Essential Element ◽  
Battery Life ◽  
Portable Devices ◽  
Clock Gating ◽  
Flip Flop ◽  
Content Type ◽  
Low Leakage

PurposeThe purpose of this paper is to design a low power clock gating technique using Galeor approach by assimilated with replica path pulse triggered flip flop (RP-PTFF).Design/methodology/approachIn the present scenario, the inclination of battery for portable devices has been increasing tremendously. Therefore, battery life has become an essential element for portable devices. To increase the battery life of portable devices such as communication devices, these have to be made with low power requirements. Hence, power consumption is one of the main issues in CMOS design. To reap a low-power battery with optimum delay constraints, a new methodology is proposed by using the advantages of a low leakage GALEOR approach. By integrating the proposed GALEOR technique with conventional PTFFs, a reduction in power consumption is achieved.FindingsThe design was implemented in mentor graphics EDA tools with 130 nm technology, and the proposed technique is compared with existing conventional PTFFs in terms of power consumption. The average power consumed by the proposed technique (RP-PTFF clock gating with the GALEOR technique) is reduced to 47 per cent compared to conventional PTFF for 100 per cent switching activity.Originality/valueThe study demonstrates that RP-PTFF with clock gating using the GALEOR approach is a design that is superior to the conventional PTFFs.

A 12T MT-CMOS low power and low leakage SRAM cell

2017 ◽  
Vol 9 (3) ◽  
pp. 307 ◽  
Author(s):  
Prashant Upadhyay ◽  
Rajib Kar ◽  
Durbadal Mandal ◽  
Sakti Prasad Ghoshal
Keyword(s):  
Low Power ◽  
Low Leakage ◽  
Sram Cell

Analysis and Simulation of a Low-Leakage Analog Single Gate and FinFET Circuits

2014 ◽  
Vol 13 (02) ◽  
pp. 1450012 ◽  
Author(s):  
Manorama Chauhan ◽  
Ravindra Singh Kushwah ◽  
Pavan Shrivastava ◽  
Shyam Akashe
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Low Power ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel ◽  
State Dependency ◽  
Low Leakage

In the world of Integrated Circuits, complementary metal–oxide–semiconductor (CMOS) has lost its ability during scaling beyond 50 nm. Scaling causes severe short channel effects (SCEs) which are difficult to suppress. FinFET devices undertake to replace usual Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) because of their better ability in controlling leakage and diminishing SCEs while delivering a strong drive current. In this paper, we present a relative examination of FinFET with the double gate MOSFET (DGMOSFET) and conventional bulk Si single gate MOSFET (SGMOSFET) by using Cadence Virtuoso simulation tool. Physics-based numerical two-dimensional simulation results for FinFET device, circuit power is presented, and classifying that FinFET technology is an ideal applicant for low power applications. Exclusive FinFET device features resulting from gate–gate coupling are conversed and efficiently exploited for optimal low leakage device design. Design trade-off for FinFET power and performance are suggested for low power and high performance applications. Whole power consumptions of static and dynamic circuits and latches for FinFET device, believing state dependency, show that leakage currents for FinFET circuits are reduced by a factor of over ~ 10X, compared to DGMOSFET and ~ 20X compared with SGMOSFET.

New Low-leakage Flip-flops with Power-gating Scheme for Ultra-low Power Systems

2011 ◽  
Vol 10 (11) ◽  
pp. 2161-2167 ◽  
Author(s):  
Jianping Hu ◽  
Xiaoying Yu ◽  
Jindan Chen
Keyword(s):  
Power Systems ◽  
Low Power ◽  
Power Gating ◽  
Ultra Low Power ◽  
Low Leakage ◽  
Gating Scheme

scholarly journals High Vt-low Leakage FDSOI Device for Ultra-low Power Operation

2016 ◽  
Vol 9 (33) ◽  
Author(s):  
Manisha Guduri ◽  
Amit Krishna Dwivedi ◽  
Aminul Islam
Keyword(s):  
Low Power ◽  
Ultra Low Power ◽  
Low Leakage ◽  
Power Operation

High Performance and Low Leakage CMOS for 45nm Low Power Technology and Beyond

2007 ◽  
Author(s):  
J.-P. Han ◽  
Y. M. Lee ◽  
H. Utomo ◽  
R. Lindsay ◽  
M. Eller ◽  
...  
Keyword(s):  
Low Power ◽  
High Performance ◽  
Low Leakage
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