Activity Analysis at Low Power Supply on 45nm Technology

2011 ◽  
Author(s):  
Guillaume Bascoul ◽  
Philippe Perdu ◽  
Kevin Sanchez ◽  
Dean Lewis ◽  
Sylvain Dudit ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Power Supply ◽  
Control Line ◽  
Time Resolved ◽  
Analysis Task ◽  
Wide Range ◽  
Complex Functions ◽  
Time Resolved Imaging ◽  
And Control

Abstract VLSI internal testing through silicon substrate has been widely studied and techniques like Time Resolved Emission has given impressive results. Nevertheless, Integrated Circuits (IC) are still evolving with more and more complex functions and various kinds of signals that could be split into two main categories: data and control. Controls activate specific block and according to the wide range of different blocks and device complexity, the first analysis task is to check block activity related to control line status. In this paper, we show how Time Resolved Imaging can precisely answer this challenge even in up-to-date technologies at low power supply.

scholarly journals Study on Topology and Control Strategy of High-Precision and Wide-Range Hybrid Converter for Photovoltaic Cell Simulator

Energies ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 39
Author(s):  
Jianfei Zhao ◽  
Minqi Hua ◽  
Tingzhang Liu ◽  
Tao Yu
Keyword(s):  
Control Strategy ◽  
Power Supply ◽  
High Performance ◽  
Photovoltaic Cell ◽  
Programmable Logic ◽  
Motor Simulation ◽  
Hybrid Topology ◽  
Wide Range ◽  
Cell Simulation ◽  
And Control

Aiming at the function and technical requirements of high-power photovoltaic cell simulation, high-performance programmable logic power supply and dc motor simulation, a high frequency isolation hybrid topology and control strategy based on current-source/voltage-source converter was studied and proposed. Firstly, according to the performance requirements of photovoltaic cell analog power supply, the control strategy requirements of the high-precision wide-range hybrid topology were proposed. Secondly, the working principle of the new hybrid topology was analyzed. At the same time, the equivalent model of the new hybrid topology was simplified and established, and the overall control strategy of the hybrid topology based on current compensation and sliding mode variable structure was proposed. Finally, simulation and experimental research on the hybrid topology was carried out, and the experimental test of photovoltaic cell simulation was completed. The simulation and experimental results show that the hybrid topology and control strategy proposed in this paper has the characteristics of wide-range output regulation, fast dynamic response, high efficiency and high power factor, and can be used for high performance photovoltaic cell simulation, programmable logic power supply and DC motor simulation.

scholarly journals Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 562 ◽  
Author(s):  
Charalambos M. Andreou ◽  
Diego Miguel González-Castaño ◽  
Simone Gerardin ◽  
Marta Bagatin ◽  
Faustino Gómez Rodriguez ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Heavy Ions ◽  
Cmos Technology ◽  
Space Environment ◽  
X Rays ◽  
Space Applications ◽  
Wide Range ◽  
Radiation Hardened ◽  
Γ Rays

The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under γ -rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor’s 0.18 μm standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements.

scholarly journals Advances in Scanning Microwave Impedance Microscopy

2021 ◽  
Author(s):  
Ravi Chandra Chintala ◽  
Nicholas Antoniou ◽  
Yongliang Yang
Keyword(s):  
Integrated Circuits ◽  
Material Properties ◽  
Dielectric Films ◽  
K Value ◽  
Wide Range ◽  
Potential Applications ◽  
Reliable Quantification ◽  
Log Linear ◽  
And Control ◽  
Future Growth

Abstract The never-ending scaling and increase in complexity of integrated circuits requires continual development of tools to understand and control the process of fabrication. However, scaling alone has not been enough to achieve improvements in performance. Material properties, dopant levels and other non-dimensional properties are now critical in increasing device performance beyond dimensional scaling. In the study presented here we report on advancements made in the measurement of electrical properties of materials using scanning Microwave Impedance Microscopy (sMIM). These advancements address the needs for certain electrical property measurements in semiconductors and have room for future growth. The latest incarnation of sMIM, the ScanWave Pro, achieves a sensitivity of less than 0.1 aF in capacitance and can measure minute changes in dielectric constant (k-value) and dopant levels in films. Additionally, we studied the response of these measurements across a range of materials and dopants used in semiconductor manufacturing and report here the results. For dielectric films and dopant levels, the response of the sMIM signal is log-linear in each case thus enabling easy and reliable quantification of measurements. The repeatability of the measurements was also studied and was found to be well within the requirements for process monitoring. This in turn, has enabled reliable quantification of results for this wide range of material properties. Up until now, sMIM measurements were qualitative and that limited their value. We implemented quantification of sMIM results and report on the approach and real-device results. Lastly, we explore additional potential applications and future developments.

scholarly journals Ultrafast molecular orbital tomography of a pentacene thin film using time-resolved momentum microscopy at a free-electron laser

2020 ◽  
Author(s):  
Markus Scholz ◽  
Kiana Baumgärtner ◽  
Christian Metzger ◽  
Dmytro Kutnyakhov ◽  
Michael Heber ◽  
...  
Keyword(s):  
Free Electron ◽  
Free Electron Laser ◽  
Optical Excitation ◽  
Experimental Conditions ◽  
General Applicability ◽  
Time Resolved ◽  
Charge Effects ◽  
Valence States ◽  
Time Resolved Imaging ◽  
And Control

Abstract Understanding and control of photon-induced dynamics of molecules on solid surfaces, including atomic rearrangements as well as charge transfer and non-equilibrium electron dynamics, are of essential importance for surface chemistry but also for the development of new devices. We use time-resolved momentum microscopy at a free-electron laser (FEL) and extend orbital tomography to time-resolved imaging of electronic wave functions of excited molecular orbitals. This technique will provide unprecedented insight into the ultrafast interplay between structural and electronic dynamics. In this work we prove general applicability and establish the experimental conditions at FEL sources to minimize space charge effects and radiation damage. We investigate a bilayer pentacene film on Ag(110) by optical laser pump and FEL probe experiments. From the momentum microscopy signal, we obtain time-dependent momentum maps of the molecular valence states that can be related to the molecular initial states by simulations of the involved photoemission matrix elements. A state above the Fermi level is identified which is temporarily occupied after optical excitation.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Aluminium Nitride ◽  
Methyl Groups ◽  
Time Resolved ◽  
Thermally Induced ◽  
Light Emitting ◽  
Carbon Impurities ◽  
Wide Range

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>

Root Cause Analysis Techniques Using Picosecond Time Resolved LADA

2014 ◽  
Author(s):  
Dan Bodoh ◽  
Kent Erington ◽  
Kris Dickson ◽  
George Lange ◽  
Carey Wu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Picosecond Laser ◽  
Root Cause Analysis ◽  
Fault Isolation ◽  
Time Resolved ◽  
Cause Analysis ◽  
Root Cause ◽  
Design And Manufacturing ◽  
Multiple Interactions ◽  
Established Technique

Abstract Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuits. LADA can reveal the physical location of a speed path, but not the timing of the speed path. This paper describes the root cause analysis benefits of 1064nm time resolved LADA (TR-LADA) with a picosecond laser. It shows several examples of how picosecond TR-LADA has complemented the existing fault isolation toolset and has allowed for quicker resolution of design and manufacturing issues. The paper explains how TR-LADA increases the LADA localization resolution by eliminating the well interaction, provides the timing of the event detected by LADA, indicates the propagation direction of the critical signals detected by LADA, allows the analyst to infer the logic values of the critical signals, and separates multiple interactions occurring at the same site for better understanding of the critical signals.

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