Comparative Study of Sample Preparation Techniques for Backside Analysis

2000 ◽  
Author(s):  
Philippe Perdu ◽  
Romain Desplats ◽  
Felix Beaudoin
Keyword(s):  
Sample Preparation ◽  
Comparative Study ◽  
Flip Chip ◽  
Cnc Milling ◽  
Whole Process ◽  
Main Challenge ◽  
Plastic Package ◽  
Wet Etch ◽  
Ir Emission ◽  
Preparation Techniques

Abstract This paper presents a comparative study of backside sample preparation techniques with applicability to conventional as well as flip chip package types. We will cover mechanical (grinding and milling tools), chemical (wet and dry chemistries) and other approaches such as laser ablation. Backside sample preparation is very challenging. The preparation process flow starts with decapsulation of the ceramic or plastic package, continues with the die paddle removal, silicon thinning and finishes with silicon polishing. The techniques involved include mechanical, chemical and other novel approaches for ceramic and plastic package. Today, only CNC milling can cover the whole process for almost any kind of packages. Nevertheless, photo ablation is a rising technology for package decapsulation. In addition, chemical wet etch can be used to perform silicon thinning and polishing. We will illustrate the complexity of the process through examples. The first one is a ceramic package where the main issue is the hardness of ceramic. The second one is a TSOP package where the main challenge is the chip scaled package. Both will be observed through the IR emission microscope to demonstrate the efficiency of the preparation.

Failure Analysis of Flip Chip C4 Package Using Focused Ion Beam Milling Technique

2011 ◽  
Author(s):  
Lihong Cao ◽  
Loc Tran ◽  
Wallace Donna
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Sections ◽  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Failure Mechanisms ◽  
Organic Substrate ◽  
Dual Beam ◽  
Preparation Techniques

Abstract This article describes how Focused Ion Beam (FIB) milling methodology enhances the capability of package-level failure analysis on flip-chip packages by eliminating the artifacts induced by using conventional mechanical techniques. Dual- Beam Focused Ion Beam (DB FIB) cross sections were successful in detecting failure mechanisms related either to the die/C4 bump or package defect inside the organic substrate. This paper outlines detailed sample preparation techniques prior to performing the DB FIB cross-sections, along with case studies of DB FIB cross-sections.

Comparative Study of Extraction Efficiencies of the Three Sample Preparation Techniques

2018 ◽  
pp. 257-307
Author(s):  
Guo-Fang Pang ◽  
Chun-Lin Fan ◽  
Qiao-Ying Chang ◽  
Fang Yang ◽  
Yan-Zhong Cao
Keyword(s):  
Sample Preparation ◽  
Comparative Study ◽  
Preparation Techniques

Special Sample Preparation Methodology for Cu Pillar Bump Characterization on Advance Thin Small Leadless Flip Chip with Copper Pillar Bump Interconnect Technology

2018 ◽  
Author(s):  
Gwee Hoon Yen ◽  
Chong Hock Heng
Keyword(s):  
Sample Preparation ◽  
Flip Chip ◽  
High Volume ◽  
Cu Pillar ◽  
Cu Pillar Bump ◽  
High Volume Production ◽  
Special Sample Preparation ◽  
Volume Production ◽  
Wet Etch ◽  
Interconnect Technology

Abstract Today, copper pillar bumping now in high volume production for mobile electronics is also a transformative technology for next generation flip chip [1] interconnects which offers advantages in many designs while meeting current and future requirements. With the continuous shrinking dimensions of semiconductor devices, the package’s design and size are approaching the dimensions of the singulated die. Moreover, failure analysis involving copper pillar packages would be the major challenges faced by analysts as copper pillar devices in nature hides its solder joints beneath its die causing obstruction in quality inspection as well as judging its solder joint strength. Chemical wet etch or deprocessing [2] by using potassium hydroxide (KOH) to remove all silicon die have disadvantages of over etching on silicon substrate and tin (Sn) surrounding the Cu pillar. Therefore, quality of sample preparation is critical and new methodology is needed.

A Freeze Shadow Technique for the Preparation of Soft Paint Latexes for Electron Microscopy

1977 ◽  
Vol 35 ◽  
pp. 314-315
Author(s):  
Earl R. Walter ◽  
Glen H. Bryant
Keyword(s):  
Sample Preparation ◽  
High Vacuum ◽  
Vacuum System ◽  
Latex Particles ◽  
New Methods ◽  
Diffusion Pump ◽  
Film Forming ◽  
Routine Basis ◽  
Distribution Studies ◽  
Preparation Techniques

With the development of soft, film forming latexes for use in paints and other coatings applications, it became desirable to develop new methods of sample preparation for latex particle size distribution studies with the electron microscope. Conventional latex sample preparation techniques were inadequate due to the pronounced tendency of these new soft latex particles to distort, flatten and fuse on the substrate when they dried. In order to avoid these complications and obtain electron micrographs of undistorted latex particles of soft resins, a freeze-dry, cold shadowing technique was developed. The method has now been used in our laboratory on a routine basis for several years.The cold shadowing is done in a specially constructed vacuum system, having a conventional mechanical fore pump and oil diffusion pump supplying vacuum. The system incorporates bellows type high vacuum valves to permit a prepump cycle and opening of the shadowing chamber without shutting down the oil diffusion pump. A baffeled sorption trap isolates the shadowing chamber from the pumps.

Advanced TEM sample preparation techniques for submicron Si devices

1995 ◽  
Vol 53 ◽  
pp. 516-517 ◽  
Author(s):  
P. B. Basham ◽  
H. L. Tsai
Keyword(s):  
Sample Preparation ◽  
Process Development ◽  
Light Transmission ◽  
Specific Area ◽  
Turnaround Time ◽  
Small Hole ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Polished Side ◽  
Preparation Techniques

The use of transmission electron microscopy (TEM) to support process development of advanced microelectronic devices is often challenged by a large amount of samples submitted from wafer fabrication areas and specific-spot analysis. Improving the TEM sample preparation techniques for a fast turnaround time is critical in order to provide a timely support for customers and improve the utilization of TEM. For the specific-area sample preparation, a technique which can be easily prepared with the least amount of effort is preferred. For these reasons, we have developed several techniques which have greatly facilitated the TEM sample preparation.For specific-area analysis, the use of a copper grid with a small hole is found to be very useful. With this small-hole grid technique, TEM sample preparation can be proceeded by well-established conventional methods. The sample is first polished to the area of interest, which is then carefully positioned inside the hole. This polished side is placed against the grid by epoxy Fig. 1 is an optical image of a TEM cross-section after dimpling to light transmission.

Novel Failure Analysis Sample Preparation Techniques for PoP Packaging

2012 ◽  
Author(s):  
Ng Sea Chooi ◽  
Chor Theam Hock ◽  
Ma Choo Thye ◽  
Khoo Poh Tshin ◽  
Dan Bockelman
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanisms ◽  
Preparation Process ◽  
Space Saving ◽  
Optical Probing ◽  
Preparation Techniques

Abstract Trends in the packaging of semiconductors are towards miniaturization and high functionality. The package-on-package(PoP) with increasing demands is beneficial in cost and space saving. The main failure mechanisms associated with PoP technology, including open joints and warpage, have created a lot of challenges for Assembly and Failure Analysis (FA). This paper outlines the sample preparation process steps to overcome the challenges to enable successful failure analysis and optical probing.

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