Pretreatment effects on the morphology and properties of aluminum oxide thermally grown on NiCoCrAlY

1985 ◽  
Vol 3 (6) ◽  
pp. 2551-2556 ◽  
Author(s):  
S. Prakash ◽  
R. C. Budhani ◽  
H. J. Doerr ◽  
C. V. Deshpandey ◽  
R. F. Bunshah
Keyword(s):  
Aluminum Oxide ◽  
Pretreatment Effects ◽  
Thermally Grown

Formation of Aluminum Oxide Films on Silicon Surface by Aluminum Evaporation in Oxygen Gas Atmosphere

2012 ◽  
Vol 1426 ◽  
pp. 421-426
Author(s):  
Y. Nagatomi ◽  
S. Yoshidomi ◽  
M. Hasumi ◽  
T. Sameshima ◽  
A. Kohno
Keyword(s):  
Aluminum Oxide ◽  
Silicon Surface ◽  
Rear Surface ◽  
Surface Recombination Velocity ◽  
Simple Method ◽  
Effective Lifetime ◽  
Gas Atmosphere ◽  
Metal Evaporation ◽  
Oxygen Gas ◽  
Thermally Grown

ABSTRACTWe report formation of thin aluminum oxide AlOx films on the silicon surface by a simple method of Al metal evaporation in oxygen gas atmosphere. 520 μm thick 30-Ωcm p-type-silicon substrates with a top bare surface and a rear surface coated with 100 nm thick thermally grown SiO2 layers were prepared. AlOx films were formed on the top surfaces by Al metal evaporation up to 20 s in oxygen gas atmosphere at 0.8 Pa with a flow rate of 3 sccm. Samples were subsequently annealed with 9.0x105 Pa H2O vapor at 260°C for 3 h. Measurement of capacitance response to a modulation voltage at 500 kHz as a function of bias gate voltages C-V revealed that AlOx films had the effective oxide thickness ranging from 2.0 and 2.6 nm were formed. C-V measurements also revealed that negative fixed charges were accumulated with a density of 5x1012 cm-2 in AlOx films. Photo-induced carrier microwave absorption measurement resulted in a high minority carrier effective lifetime τeff of 3.6x10-4 s comparable to that of 4.1x10-4 s for thermally grown SiO2 passivation. Field effect passivation was probably caused by negative charges in AlOx so that the surface recombination velocity decreased to 70 cm/s. X-ray reflectivity analysis indicated that the interfacial layer like SiOx was formed between AlOx and Si substrate. High pressure H2O vapor heat annealing caused increase in the density and decrease in the thickness of AlOx layers, although it increased the density and thickness of the interfacial SiOx layer thickness. H2O vapor treatment is effective to improve the quality of nanometer thick AlOxlayer.

SEM Evaluation of Fluoride Pretreatment Effects on Acid-Etching of Caries-Like Enamel Lesions In Vitro

1981 ◽  
Vol 39 ◽  
pp. 474-475
Author(s):  
M. John Hicks
Keyword(s):  
Dental Enamel ◽  
Preventive Measure ◽  
Acid Etching ◽  
Distilled Water ◽  
Adhesive Resin ◽  
Fluoride Treatment ◽  
Treatment Groups ◽  
Pretreatment Effects ◽  
Preparation Techniques

Acid-etching of enamel surfaces has been performed routinely to bond adhesive resin materials to sound dental enamel as a caries-preventive measure. The effect of fluoride pretreatment on acid-etching of enamel has been reported to produce inconsistent and unsatisfactory etching patterns. The failure to obtain an adequate etch has been postulated to be due to fluoride precipitation products deposited on the enamel surface. The purpose of this study was to evaluate the effects of fluoride pretreatment on acid-etching of carieslike lesions of human dental enamel.Caries-like lesions of enamel were created in vitro on human molar and premolar teeth. The teeth were divided into two fluoride treatment groups. The specimens were exposed for 4 minutes to either a 2% Sodium Fluoride (NaF) solution or a 10% Stannous Fluoride (SnF2) solution. The specimens were then washed in deionized-distilled water. Each tooth was sectioned into four test regions. This was carried out to compare the effects of various time exposures (0 to 2 minutes) and differing concentrations (10 to 60% w/w) of phosphoric acid (H3PO4) on etching of caries-like lesions. Standard preparation techniques for SEM were performed on the specimens.

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

Which tool to distinguish transient alumina from alpha alumina in thermally grown alumina scales?

2005 ◽  
Vol 22 (3) ◽  
pp. 527-534 ◽  
Author(s):  
S. Chevalier ◽  
R. Molins ◽  
O. Heintz ◽  
J.P. Larpin
Keyword(s):  
Alumina Scales ◽  
Alpha Alumina ◽  
Thermally Grown
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