Influence of oxygen partial pressure on the growth of Al-doped zinc oxide films by reactive MF magnetron sputtering

Author(s):  
Rui-jiang Hong ◽  
Xin Jiang
2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Jin-Cherng Hsu ◽  
Yueh-Sheng Chiang

In this study, zinc oxide films were deposited by an ion-beam sputter deposition in various oxygen partial pressures at room temperature. The films changed the structures from amorphous to polycrystalline with increasing the oxygen partial pressure (). The optimal was found at Torr because the film prepared at the oxygen partial pressure had the lowest resistivity and the highest transparence in the visible light region. The lowest resistivity results from a great number of oxygen vacancy sites formed on the polycrystalline surface as exposed to the atmosphere. Moreover, the film has the highest XRD peak intensity, smallest FWHM diffraction peak, smallest -spacing, and smallest biaxial stress.


2011 ◽  
Vol 3 (1) ◽  
pp. 77-81
Author(s):  
Yasemin Aydin ◽  
Mehmet Oguz Guler ◽  
Ozgur Cevher ◽  
Deniz Gultekin ◽  
Hatem Akbulut

2007 ◽  
Vol 46 (6A) ◽  
pp. 3319-3323 ◽  
Author(s):  
Takahiro Hiramatsu ◽  
Mamoru Furuta ◽  
Hiroshi Furuta ◽  
Tokiyoshi Matsuda ◽  
Takashi Hirao

2005 ◽  
Vol 148 (1) ◽  
pp. 37-41 ◽  
Author(s):  
I. Sayago ◽  
M. Aleixandre ◽  
A. Martínez ◽  
M.J. Fernández ◽  
J.P. Santos ◽  
...  

2010 ◽  
Vol 25 (4) ◽  
pp. 045008 ◽  
Author(s):  
Changgang Huang ◽  
Meili Wang ◽  
Zhonghua Deng ◽  
Yongge Cao ◽  
Quanlin Liu ◽  
...  

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