scholarly journals Influence of Oxygen on Zinc Oxide Films Fabricated by Ion-Beam Sputter Deposition

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Jin-Cherng Hsu ◽  
Yueh-Sheng Chiang
Keyword(s):  
Zinc Oxide ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
Oxide Films ◽  
Sputter Deposition ◽  
Biaxial Stress ◽  
Zinc Oxide Films ◽  
Light Region ◽  
Ion Beam Sputter Deposition

In this study, zinc oxide films were deposited by an ion-beam sputter deposition in various oxygen partial pressures at room temperature. The films changed the structures from amorphous to polycrystalline with increasing the oxygen partial pressure (). The optimal was found at Torr because the film prepared at the oxygen partial pressure had the lowest resistivity and the highest transparence in the visible light region. The lowest resistivity results from a great number of oxygen vacancy sites formed on the polycrystalline surface as exposed to the atmosphere. Moreover, the film has the highest XRD peak intensity, smallest FWHM diffraction peak, smallest -spacing, and smallest biaxial stress.

The Effect of Oxygen Partial Pressure on the Formation of Nano Crystalline Zinc Oxide Films

2011 ◽  
Vol 3 (1) ◽  
pp. 77-81
Author(s):  
Yasemin Aydin ◽  
Mehmet Oguz Guler ◽  
Ozgur Cevher ◽  
Deniz Gultekin ◽  
Hatem Akbulut
Keyword(s):  
Zinc Oxide ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Nano Crystalline ◽  
Effect Of Oxygen

scholarly journals Effect of Oxygen Partial Pressure on Crystal Structure, Oxygen Vacancy, and Surface Morphology of Epitaxial SrTiO3 Thin Films Grown by Ion Beam Sputter Deposition

Oxygen ◽  
2021 ◽  
Vol 1 (1) ◽  
pp. 62-72
Author(s):  
Gasidit Panomsuwan ◽  
Nagahiro Saito
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Oxygen Vacancy ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
Compressive Strain ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Epitaxial SrTiO3 (STO) thin films were grown on (001)-oriented LaAlO3 (LAO) substrates at 800 °C by an ion beam sputter deposition (IBSD). Oxygen partial pressure (PO2) was varied at 1.5 × 10−5, 1.5 × 10−4, and 1.5 × 10−3 Torr during the growth. The effects of PO2 on crystal structure, oxygen vacancy, and surface morphology of the STO films were investigated and are discussed to understand their correlation. It was found that PO2 played a significant role in influencing the crystal structure, oxygen vacancy, and surface morphology of the STO films. All STO films grew on the LAO substrates under a compressive strain along an in-plane direction (a- and b-axes) and a tensile strain along the growth direction (c-axis). The crystalline quality of STO films was slightly improved at higher PO2. Oxygen vacancy was favorably created in the STO lattice grown at low PO2 due to a lack of oxygen during growth and became suppressed at high PO2. The existence of oxygen vacancy could result in a lattice expansion in both out-of-plane and in-plane directions due to the presence of Ti3+ instead of Ti4+ ions. The surface roughness of the STO films gradually decreased and was nearly close to that of the bare LAO substrate at high PO2, indicating a two-dimensional (2D) growth mode. The results presented in this work provide a correlation among crystal structure, oxygen vacancy, and surface morphology of the epitaxial STO films grown by IBSD, which form a useful guideline for further study.

Improving efficiency of organic solar cells by preparing aluminum-doped zinc oxide films by ion beam-assisted sputtering

2013 ◽  
Vol 14 (1) ◽  
pp. 182-186 ◽  
Author(s):  
Kuang-Teng Hung ◽  
Hsuan-Ta Wu ◽  
Sheng-Wen Fu ◽  
Hui-Ju Chen ◽  
Chu-Yun Hsiao ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
Ion Beam ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Aluminum Doped Zinc Oxide

Post-annealing properties of aluminum-doped zinc oxide films fabricated by ion beam co-sputtering

Vacuum ◽  
2013 ◽  
Vol 87 ◽  
pp. 227-231 ◽  
Author(s):  
Yu-Yun Chen ◽  
Paul W. Wang ◽  
Jin-Cherng Hsu ◽  
Chun-Yi Lee
Keyword(s):  
Zinc Oxide ◽  
Ion Beam ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Post Annealing ◽  
Aluminum Doped Zinc Oxide

Zinc oxide films formed by oxidation of zinc under low partial pressure of oxygen

2003 ◽  
Vol 57 (8) ◽  
pp. 1435-1440 ◽  
Author(s):  
W. Gao ◽  
Z.W. Li ◽  
R. Harikisun ◽  
S.-S. Chang
Keyword(s):  
Zinc Oxide ◽  
Partial Pressure ◽  
Oxide Films ◽  
Partial Pressure Of Oxygen ◽  
Zinc Oxide Films
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