scholarly journals Inhibition grain growth and electrical properties by adding In2O3 to SnO2-Co3O4-Ta2O5 ceramics

2018 ◽  
Vol 65 (1) ◽  
pp. 25 ◽  
Author(s):  
Mauricio Olvera ◽  
Marla Berenice Hernández Hernández ◽  
Sergio Garcia Villarreal ◽  
Eden Amaral Rodríguez Castellanos ◽  
Cristian Gomez ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Indium Oxide ◽  
Breakdown Voltage ◽  
Dielectric Materials ◽  
High Resistivity ◽  
Oxide Content ◽  
Nonlinearity Coefficient ◽  
Ceramic System ◽  
Ceramic Samples ◽  
Low Levels

In this contribution the effect of In2O3 additions on the microstructure, physical, and electrical properties of the SnO2-Co3O4-Ta2O5 ceramic system was investigated. Since the effect of In2O3 has been studied typically at low levels, special attention has been paid to the effect of high levels (1 and 2 mol % In2O3) in the ceramics. Results show that up to 0.1 mol % In2O3, an increase of indium oxide content is correlated with grain size reduction and an increase of the nonlinearity coefficient (a) and breakdown voltage (EB), producing an augmentation by a factor of 2 in the nonlinearity coefficient and an increment by a factor of 8 in the breakdown voltage. However, shrinkage () and measured density are not influenced by the addition of indium oxide. For samples with 1 and 2 mol % In2O3, in non-calcined condition, In2O3 is present with cubic structure. However, in calcined specimens, In2O3 is not detected anymore and SnO2-crystal structure undergoes a change from tetragonal to cubic. These ceramic samples exhibit high resistivity, behaving like dielectric materials.  

Microstructure and Electrical Properties of ZnO-Pr6O11-Dy2O3-Based Varistor Ceramics Doped with La2O3

2007 ◽  
Vol 336-338 ◽  
pp. 680-683
Author(s):  
Jing Nan Cai ◽  
Yuan Hua Lin ◽  
Rong Juan Zhao ◽  
Ce Wen Nan ◽  
Jin Liang He
Keyword(s):  
Rare Earth ◽  
Phase Composition ◽  
Electrical Properties ◽  
Rare Earth Elements ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Intergranular Phase ◽  
Ceramic Method ◽  
Sem Micrographs ◽  
Ceramic Samples

ZnO-Pr6O11-Dy2O3-based varistor ceramics doped with 0~1.5 mol% La2O3 were fabricated by a conventional ceramic method. All the samples were sintered at 1350 oCfor 2 h. The phase composition and microstructure of the ceramic samples have been investigated by XRD, SEM and EDS. The results of SEM micrographs indicated that the La2O3 additives can promote ZnO grain’s growth, and the rare earth elements dispersed mainly in the intergranular phase observed by EDS. The electrical properties of the samples determined by the V-I curves revealed that the breakdown voltage of samples decreases from 508 V/mm to about 100 V/mm with the increase of La2O3, and the nonlinear exponent also decreases from 20.2 to 13.2. The typical leakage current is about 10.2 μA for the sample doped with 0.5 mol% La2O3.

scholarly journals Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Loss ◽  
Single Crystal ◽  
Oxygen Stoichiometry ◽  
High Resistivity ◽  
Edge Structure ◽  
Glass Substrates ◽  
Lower Resistivity

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

scholarly journals Analysis of Electrical Properties Using the four point Probe Method

2018 ◽  
Vol 73 ◽  
pp. 13019 ◽  
Author(s):  
Richard S. Waremra ◽  
Philipus Betaubun
Keyword(s):  
Electrical Properties ◽  
Probe Method ◽  
High Resistivity ◽  
Thick Sheet ◽  
Electric Characteristic

There has been conducted Physics research on a material, that is, monitoring electric characteristic of a material using four-point probe method. This research measures current and voltage. The result is used to determine resistivity of a material. The research uses 2 samples, that is, chalk and charcoal. The result shows the resistivity of the sample in the form of bulk (t>s) for chalk has high resistivity on voltage of 6.6 Volt. Meanwhile, resistivity on thick sheet (t<s) has high resistivity on voltage of 7 Volt. On the charcoal material, large resistivity (t>s) is in 6 Volt, and on large resistivity (t<s) is in 6.6 Volt.

Effects of Different Sintering Temperature on the Microstructure and Piezoelectric Properties of Pb(Nb2/3Zn1/3)x(Zr52Ti48)1-XO3 Ceramics

2014 ◽  
Vol 1061-1062 ◽  
pp. 83-86
Author(s):  
Hong Wu ◽  
De Yi Zheng
Keyword(s):  
Electrical Properties ◽  
Electromechanical Coupling ◽  
Piezoelectric Properties ◽  
Sintering Temperature ◽  
Electromechanical Coupling Coefficient ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ceramic Samples ◽  
Xrd Patterns ◽  
The Relationship

In this paper, the effects of different sintering temperature on the microstructure and piezoelectric properties of Pb(Nb2/3Zn1/3)0.03(Zr52Ti48)0.97O3(PNZZT) ceramic samples were investigated. The Pb(Nb2/3Zn1/3)0.03(Zr52Ti48)0.97O3 ceramics materials was prepared by a conventional mixed oxide method. In the period of the experiment, the relationship between crystallographic phase and microstructure were analyzed by X-ray diffraction(XRD) and scanning electron microscopy(SEM) respectively. The XRD patterns shows that all of the ceramic samples are with a tetragonal perovskite structure. Along with sintering temperature increased and the x is 0.03, the grain size gradually become big. Through this experiment, it has been found that when the x is 0.03 and sintered at 1130°C for 2 h, the grains grow well, the grain-boundary intersection of the sample combined well and the porosity of the ceramics decreased, an excellent comprehensive electrical properties of the Pb(Nb2/3Zn1/3)0.03(Zr52Ti48)0.97O3 samples can be obtained. Its best electrical properties are as follows: dielectric constant (ε) is 1105, dielectric loss(tg) is 0.017, electromechanical coupling coefficient (Kp) is 0.287, piezoelectric constant(d33) is 150PC/N

Effect of Water on Electrical Properties of Refined, Bleached, and Deodorized Palm Oil (RBDPO) as Electrical Insulating Material

2013 ◽  
Vol 64 (4) ◽  
Author(s):  
Nazera Ismail ◽  
Yanuar Z. Arief ◽  
Zuraimy Adzis ◽  
Shakira A. Azli ◽  
Abdul Azim A. Jamil ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Breakdown Voltage ◽  
Palm Oil ◽  
Pour Point ◽  
Electrical Breakdown ◽  
Dissipation Factor ◽  
Mineral Oil ◽  
Flash Point ◽  
Effect Of Water ◽  
Insulating Liquid

This paper describes the properties of refined, bleached, deodorized palm oil (RBDPO) as having the potential to be used as insulating liquid. There are several important properties such as electrical breakdown, dielectric dissipation factor, specific gravity, flash point, viscosity and pour point of RBDPO that was measured and compared to commercial mineral oil which is largely in current use as insulating liquid in power transformers. Experimental results of the electrical properties revealed that the average breakdown voltage of the RBDPO sample, without the addition of water at room temperature, is 13.368 kV. The result also revealed that due to effect of water, the breakdown voltage is lower than that of commercial mineral oil (Hyrax). However, the flash point and the pour point of RBDPO is very high compared to mineral oil thus giving it advantageous possibility to be used safely as insulating liquid. The results showed that RBDPO is greatly influenced by water, causing the breakdown voltage to decrease and the dissipation factor to increase; this is attributable to the high amounts of dissolved water.

Photoluminescence and electrical properties of erbium‐doped indium oxide films prepared by rf sputtering

1994 ◽  
Vol 76 (12) ◽  
pp. 8209-8211 ◽  
Author(s):  
Hong Koo Kim ◽  
Cheng Chung Li ◽  
Gerald Nykolak ◽  
Philippe C. Becker
Keyword(s):  
Electrical Properties ◽  
Indium Oxide ◽  
Oxide Films ◽  
Rf Sputtering ◽  
Erbium Doped ◽  
Indium Oxide Films
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