Electrical Properties of High‐Resistivity Nickel‐Doped Silicon

1970 ◽  
Vol 41 (6) ◽  
pp. 2644-2647 ◽  
Author(s):  
W. B. Chua ◽  
K. Rose
Keyword(s):  
Electrical Properties ◽  
High Resistivity ◽  
Doped Silicon

scholarly journals Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Loss ◽  
Single Crystal ◽  
Oxygen Stoichiometry ◽  
High Resistivity ◽  
Edge Structure ◽  
Glass Substrates ◽  
Lower Resistivity

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

Nano-scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

2021 ◽  
pp. 1-1
Author(s):  
Hung-Yuan Chang ◽  
Yew-Chung Sermon Wu ◽  
Chia-He Chang ◽  
Kun-Lin Lin ◽  
Abhijeet Joshi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shallow Junction ◽  
Depth Profiles ◽  
Nano Scale ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals Analysis of Electrical Properties Using the four point Probe Method

2018 ◽  
Vol 73 ◽  
pp. 13019 ◽  
Author(s):  
Richard S. Waremra ◽  
Philipus Betaubun
Keyword(s):  
Electrical Properties ◽  
Probe Method ◽  
High Resistivity ◽  
Thick Sheet ◽  
Electric Characteristic

There has been conducted Physics research on a material, that is, monitoring electric characteristic of a material using four-point probe method. This research measures current and voltage. The result is used to determine resistivity of a material. The research uses 2 samples, that is, chalk and charcoal. The result shows the resistivity of the sample in the form of bulk (t>s) for chalk has high resistivity on voltage of 6.6 Volt. Meanwhile, resistivity on thick sheet (t<s) has high resistivity on voltage of 7 Volt. On the charcoal material, large resistivity (t>s) is in 6 Volt, and on large resistivity (t<s) is in 6.6 Volt.

Electrical properties of deuteron irradiated high resistivity silicon

2014 ◽  
Vol 325 ◽  
pp. 107-114 ◽  
Author(s):  
Jerzy Krupka ◽  
Waldemar Karcz ◽  
Sergej P. Avdeyev ◽  
Paweł Kamiński ◽  
Roman Kozłowski
Keyword(s):  
Electrical Properties ◽  
High Resistivity ◽  
High Resistivity Silicon

The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE)

1987 ◽  
Vol 42 (3) ◽  
pp. 197-200 ◽  
Author(s):  
R. A. A. Kubiak ◽  
S. M. Newstead ◽  
W. Y. Leong ◽  
R. Houghton ◽  
E. H. C. Parker ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Doped Silicon

scholarly journals Electrical properties of boron, phosphorus and gallium co-doped silicon

2011 ◽  
Vol 8 ◽  
pp. 349-354 ◽  
Author(s):  
Erwann Fourmond ◽  
Maxime Forster ◽  
Roland Einhaus ◽  
Hubert Lauvray ◽  
Jed Kraiem ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Doped Silicon ◽  
Co Doped

The effect of stoichiometry on the microstructure and properties of lead lanthanum titanate thin films

1995 ◽  
Vol 10 (11) ◽  
pp. 2777-2787 ◽  
Author(s):  
Ashraf R. Khan ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Relative Permittivity ◽  
Room Temperature ◽  
Optical Transmittance ◽  
High Resistivity ◽  
Charge Storage ◽  
Electrical Measurements ◽  
Storage Density ◽  
Lanthanum Titanate

Thin films of Lead Lanthanum Titanate (PLT) corresponding to 28 at. % of La were prepared by the metal-organic decomposition (MOD) process. The films were fabricated from two solutions of different composition. The composition of the first solution was determined, assuming that the incorporation of La3+ in the PbTiO3 structure gives rise to A-site or Pb vacancies, whereas for the composition of the other solution the creation of B-site or Ti vacancies was assumed. The effect of excess lead on the microstructure and the optical and electrical properties was studied for 0% to 20% excess PbO. The x-ray diffraction patterns of all films at room temperature indicated a cubic structure with a lattice constant of 3.92 Å. Optical and electrical measurements showed the films made assuming B-site vacancies had better properties. In general, excess PbO was found to improve the optical transmittance as well as the electrical properties of films. However, in films assuming the formation of B-site vacancies, PLT showed improved electrical properties only up to 5–10% excess PbO, while higher PbO additions had a deleterious effect. The films had a high resistivity, good relative permittivity, low loss, very low leakage current density, and high charge storage density. A type-B film with 10% excess Pb had a relative permittivity of 1340 at 100 kHz and a charge storage density of around 16.1 μC/cm2 at a field of 200 kV/cm at room temperature.

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