scholarly journals Determination of the barrier height of Pt-Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy

2018 ◽  
Vol 64 (6) ◽  
pp. 655
Author(s):  
J. Eduardo Rivera L. ◽  
Narcizo Muñoz A. ◽  
Juliana G. Gutiérrez-Paredes ◽  
Pedro A. Tamayo-Meza ◽  
Alejandro Alvarez Z. ◽  
...  
Keyword(s):  
Thin Films ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Scanning Time ◽  
Atomic Force ◽  
Doped Zno

By means of the I-V characteristics measured at room temperature, the height of the Schottky barrier established by the conductive Pt-Ir tip of an Atomic Force Microscope on the aluminum doped ZnO thin films were estimated in the range of 0.58-0.64 eV. The ideality factors were in the range of  2.11-1.39, respectively. These values are in accordance with those reported by other authors that measured the height of the Pt Schottky barrier on ZnO by means of several methods. The procedure detailed in this work suggests that the scanning time for obtaining I-V Schottky characteristics is of the order of 2 ms.

Synthesis and Atomic Force Microscopy Contact Current Images of Aluminum Doped ZnO Thin Films

2010 ◽  
Vol 644 ◽  
pp. 109-112
Author(s):  
N. Muñoz Aguirre ◽  
J. Eduardo Rivera-López ◽  
L. Martínez Pérez ◽  
Pedro A. Tamayo Meza
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Spray Pyrolysis Technique ◽  
Water Mist ◽  
Zno Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Aluminum doped ZnO thin films were synthesized by the water-mist assisted spray pyrolysis technique. The structural characterization by means of X-Ray diffraction measurements is reported. By means of Atomic Force Microscopy, the superficial electrical characteristics of the thin films are studied. Specifically, contact current images are shown and discussed. It is important to emphasize that in spite of no voltage is applied to the Atomic Force Microscopy contact conductive tip, current images are getting.

Ni-Doped ZnO Thin Films: Deposition, Characterization and Photocatalytic Applications

2021 ◽  
Vol 21 (3) ◽  
pp. 1560-1569
Author(s):  
K. Moorthy ◽  
S. S. R. Inbanathan ◽  
C. Gopinathan ◽  
N. P. Lalla ◽  
Abdulaziz Ali Alghamdi ◽  
...  
Keyword(s):  
Thin Films ◽  
Uv Light ◽  
Characteristic Root ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Root like structured Ni-doped zinc oxide [Zn(1-x)NixO (x = 0.09)] thin films were deposited on a non-conducting glass substrate by indigenously developed spray pyrolysis system at optimized substrate hotness of 573±5 K. Thus obtained Ni-doped ZnO thin films were characterized by UV-visible spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), Atomic Force Microscopy (AFM). XRD result revealed that Ni-doped ZnO has a polycrystalline nature with a hexagonal wurtzite structure. For pure ZnO and Ni-doped ZnO thin films, the particle sizes were 60.9 and 53.3 nm while lattice strain values were 1.56×10−3 and 1.14×10−3, respectively. The film surface showed characteristic root-like structure as observed by the SEM. It was observed that the Ni-doped ZnO thin films were grown in high density along with more extent of branching as compared to pure ZnO thin films but retained the root-like morphologies, however, the branches were more-thinner and of shorter lengths. AFM analysis showed that the surface grains of the Ni-doped samples are homogeneous with less RMS roughness values compared with the undoped ZnO samples. The photocatalytic activity of the prepared thin films was evaluated by the degradation of methyl orange (MO) dye under UV light irradiation. Pure ZnO and Ni-doped ZnO thin films took 150 min and 100 min to degrade about 60% MO dye, respectively.

scholarly journals Structural and optical properties of Fe- doped ZnO thin films prepared by Sol–Gel spin coating process and their photocatalytic activities

2019 ◽  
Vol 17 (40) ◽  
pp. 95-107
Author(s):  
Selma M. H. Al-Jawad
Keyword(s):  
Thin Films ◽  
Organic Dyes ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Pure and Fe-doped zinc oxide nanocrystalline films were preparedvia a sol–gel method using -C for 2 h.The thin films were prepared and characterized by X-ray diffraction(XRD), atomic force microscopy (AFM), field emission scanningelectron microscopy (FE-SEM) and UV- visible spectroscopy. TheXRD results showed that ZnO has hexagonal wurtzite structure andthe Fe ions were well incorporated into the ZnO structure. As the Felevel increased from 2 wt% to 8 wt%, the crystallite size reduced incomparison with the pure ZnO. The transmittance spectra were thenrecorded at wavelengths ranging from 300 nm to 1000 nm. Theoptical band gap energy of spin-coated films also decreased as Fedoping concentration increased. In particular, their optical band gapenergies were 3.75, 3.6, 3.5, 3.45 and 3.3 eV doping concentration of0%, 2%, 4%, 6% and 8% Fe, respectively. The performance of thepure and doped ZnO thin films was examined for the photocatalyticactivity using organic dyes (methyl orange, methyl blue, methylviolet). The samples ZnO with concentration of Fe showed increasedphotocatalytic activity with an optimal maximum performance at0.8 wt%.

The use of advanced atomic force microscopy for the quantitative nanomechanical characterization of Co-doped ZnO thin films

2017 ◽  
Vol 55 (6) ◽  
pp. 2458-2467 ◽  
Author(s):  
Sara Benzitouni ◽  
Mourad Zaabat ◽  
Jean Ebothe ◽  
Boubaker Boudine ◽  
Raphael Coste
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Zno Thin Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno ◽  
Co Doped

Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

2015 ◽  
Vol 117 (17) ◽  
pp. 17B901 ◽  
Author(s):  
Yu-Min Hu ◽  
Sih-Sian Li ◽  
Chein-Hsiun Kuang ◽  
Tai-Chun Han ◽  
Chin-Chung Yu
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Annealing Effect ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno

Determination of electrical types in the P-doped ZnO thin films by the control of ambient gas flow

2010 ◽  
Vol 256 (14) ◽  
pp. 4438-4441 ◽  
Author(s):  
Young Yi Kim ◽  
Won Suk Han ◽  
Hyung Koun Cho
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Ambient Gas
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