Determination of electrical types in the P-doped ZnO thin films by the control of ambient gas flow

2010 ◽  
Vol 256 (14) ◽  
pp. 4438-4441 ◽  
Author(s):  
Young Yi Kim ◽  
Won Suk Han ◽  
Hyung Koun Cho
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Ambient Gas

Determination of Gamma Transmittance and Density Assessment for Al Doped ZnO Thin Films by Using Gamma Transmission Technique

2011 ◽  
Vol 312-315 ◽  
pp. 830-835 ◽  
Author(s):  
B. Karagoz ◽  
O. Ozdemir ◽  
O. Karacasu ◽  
N. Baydogan ◽  
Huseyin Cimenoglu ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Structural Changes ◽  
Zno Thin Films ◽  
Transmission Technique ◽  
Radioisotope Source ◽  
Gamma Absorption ◽  
Doped Zno ◽  
Density Assessment

The aim of this study is to investigate the structural changes of Al doped ZnO thin films with gamma transmission technique with Cs-137 gamma radioisotope source. Gamma transmittance and gamma absorption coefficient, (1/mm) were investigated with the increase Al (at.%) concentration. Hence it can be possible to assess the density for Al doped ZnO thin films.

scholarly journals Determination of the barrier height of Pt-Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy

2018 ◽  
Vol 64 (6) ◽  
pp. 655
Author(s):  
J. Eduardo Rivera L. ◽  
Narcizo Muñoz A. ◽  
Juliana G. Gutiérrez-Paredes ◽  
Pedro A. Tamayo-Meza ◽  
Alejandro Alvarez Z. ◽  
...  
Keyword(s):  
Thin Films ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Scanning Time ◽  
Atomic Force ◽  
Doped Zno

By means of the I-V characteristics measured at room temperature, the height of the Schottky barrier established by the conductive Pt-Ir tip of an Atomic Force Microscope on the aluminum doped ZnO thin films were estimated in the range of 0.58-0.64 eV. The ideality factors were in the range of  2.11-1.39, respectively. These values are in accordance with those reported by other authors that measured the height of the Pt Schottky barrier on ZnO by means of several methods. The procedure detailed in this work suggests that the scanning time for obtaining I-V Schottky characteristics is of the order of 2 ms.

Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films

2010 ◽  
Vol 25 (7) ◽  
pp. 711-716 ◽  
Author(s):  
Xue-Tao WANG ◽  
Li-Ping ZHU ◽  
Zhi-Gao YE ◽  
Zhi-Zhen YE ◽  
Bing-Hui ZHAO
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

Heat Resistance of Ga-Doped ZnO Thin Films for Application as Transparent Electrodes in Liquid Crystal Displays

2010 ◽  
Vol 157 (2) ◽  
pp. J13 ◽  
Author(s):  
Naoki Yamamoto ◽  
Hisao Makino ◽  
Takahiro Yamada ◽  
Yoshinori Hirashima ◽  
Hiroaki Iwaoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Crystal ◽  
Heat Resistance ◽  
Liquid Crystal Displays ◽  
Zno Thin Films ◽  
Transparent Electrodes ◽  
Doped Zno

Preparing transparent cobalt-doped ZnO thin films by DC magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6311-6316 ◽  
Author(s):  
Pongladda Panyajirawut ◽  
Nattha Pratumsuwan ◽  
Kornkamon Meesombad ◽  
Kridsana Thanawattana ◽  
Artit Chingsungnoen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno
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