Sample preparation techniques for transmission electron microscopy of geologic materials

1986 ◽  
Author(s):  
M.-V. Wandless ◽  
G.L. Nord
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Geologic Materials ◽  
Transmission Electron ◽  
Preparation Techniques

The Challenge and Methods of TEM Cross-Sectioning of < 0.25 Micron Plugs

1998 ◽  
Vol 523 ◽  
Author(s):  
C. Amy Hunt ◽  
Yuhong Zhang ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Adhesion Layer ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Sectional Plane ◽  
Preparation Techniques

AbstractTransmission electron microscopy (TEM) is a useful tool in process evaluation and failure analysis for semiconductor industries. A common focus of semiconductor TEM analyses is metalization vias (plugs) and it is often desirable to cross-section through a particular one. If the cross-sectional plane deviates away from the center of the plug, then the thin adhesion layer around the plug will be blurred by surrounding materials such as the inter-layer dielectric and the plug material. The importance of these constraints, along with the difficulty of precision sample preparation, has risen sharply as feature sizes have fallen to 0.25 μm and below. The suitability of common sample preparation techniques for these samples is evaluated.

Improving transmission electron microscopy characterization of semiconductors by minimizing sample preparation artifacts

1992 ◽  
Vol 70 (10-11) ◽  
pp. 875-880 ◽  
Author(s):  
J. P. McCaffrey ◽  
G. I. Sproule ◽  
R. Sargent
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
Transmission Electron Microscopy Characterization ◽  
Silicon Based ◽  
Microscopy Characterization ◽  
Preparation Techniques

Techniques employed for the preparation of transmission electron microscopy (TEM) samples can introduce artifacts that obscure subtle detail in the materials being studied. Traditional semiconductor sample preparation techniques rely heavily on ion milling, which leaves amorphous layers on ion milled surfaces and some intermixing across interfaces, thus degrading the TEM images of these samples. Experimental results of the extent of this amorphization and intermixing are presented for silicon-based semiconductor samples, and methods to minimize these effects are suggested. These methods include variations in ion milling parameters that reduce the extent of the artifacts, and improvements in the small-angle cleavage technique that eliminate these artifacts completely.

scholarly journals TEM Sample Preparation: An Interdisciplinary Website

2009 ◽  
Vol 17 (2) ◽  
pp. 38-41 ◽  
Author(s):  
Jeanne Ayache ◽  
Luc Beaunier ◽  
Jacqueline Boumendil ◽  
Gabrielle Ehret ◽  
Danièle Laub
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Material Science ◽  
International Community ◽  
Central Importance ◽  
Transmission Electron ◽  
Characterization Of Materials ◽  
Preparation Techniques

Sample preparation is of central importance for the characterization of materials by transmission electron microscopy (TEM). As a guide to researchers seeking practical help on the use of all types of TEM sample preparation techniques, we have created an Internet website. This website has been designed in French and is now translated into English. The website is accessible free of charge.The TEMSAMPREP website, figure 1 http://temsamprep.in2p3.fr/, is the result of a synergistic effort of an atypical team of five electron microscopy scientists having different research specialties in physics, mineralogy, material science, and biology. They shared five years of human adventure in creating the website to transmit their 30 years of TEM experience to the international community.

Preparation of Cross-Sectional TEM Samples of PbTe and CdxPb1−x Te on BaF2

1990 ◽  
Vol 199 ◽  
Author(s):  
John P. McCaffrey ◽  
Suhit R. Das ◽  
John G. Cook
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Sample Preparation ◽  
Argon Atom ◽  
Low Energy ◽  
Atom Beam ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Preparation Techniques

ABSTRACTEpitaxial PbTe and CdxPb1−xTe films have been grown on single crystal (111) BaF2 by low energy bias sputtering, and have been analyzed by transmission electron microscopy (TEM) and transmission electron diffraction (TED). Preparation of suitable cross-sectional TEM samples was made difficult by the tendency of the substrate to cleave apart during dimpling, and by the epoxy forming bridges across the sample during atom milling. Suitable preparation techniques were developed employing back-polishing the BaF2 substrates to <0.2 mm thickness, using a suitable epoxy, and shielding the argon atom beam during milling to prevent milling parallel to the surface. In cases where an epoxy bridge did form across the sample, the bridge was broken manually or by atom milling, depending upon the area of sample which was being investigated. These techniques are applicable to other materials which produce similar problems during TEM sample preparation.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

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