scholarly journals High-throughput Analysis for Combinatorial Epitaxial Thin Films by Concurrent X-Ray Diffraction

2011 ◽  
Vol 54 (11) ◽  
pp. 571-576 ◽  
Author(s):  
Kazuhiko OMOTE
Keyword(s):  
Thin Films ◽  
High Throughput ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
High Throughput Analysis ◽  
Throughput Analysis ◽  
X Ray

scholarly journals High energy x-ray diffraction/x-ray fluorescence spectroscopy for high-throughput analysis of composition spread thin films

2009 ◽  
Vol 80 (12) ◽  
pp. 123905 ◽  
Author(s):  
John M. Gregoire ◽  
Darren Dale ◽  
Alexander Kazimirov ◽  
Francis J. DiSalvo ◽  
R. Bruce van Dover
Keyword(s):  
Thin Films ◽  
Fluorescence Spectroscopy ◽  
High Throughput ◽  
High Energy ◽  
X Ray Diffraction ◽  
High Throughput Analysis ◽  
Throughput Analysis ◽  
X Ray

High Throughput X-ray Diffractometer for Combinatorial Epitaxial Thin Films

2001 ◽  
Vol 700 ◽  
Author(s):  
M. Ohtani ◽  
T. Fukumura ◽  
A. Ohtomo ◽  
T. Kikuchi ◽  
K. Omote ◽  
...  
Keyword(s):  
Thin Films ◽  
High Throughput ◽  
Epitaxial Thin Films ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Heating Method ◽  
X Ray ◽  
Spatially Resolved ◽  
Diffraction Angle

AbstractWe report on the development of a high throughput x-ray diffractometer that concurrently measures spatially resolved x-ray diffraction (XRD) spectra of epitaxial thin films integrated on a substrate. A convergent x-ray is focused into a stripe on a substrate and the diffracted beam is detected with a two-dimensional x-ray detector, so that the snapshot image represents a mapping of XRD intensity with the axes of the diffraction angle and the position in the sample. High throughput characterization of crystalline structure is carried out for a BaxSr1-xTiO3 composition-spread film on a SrTiO3 substrate. Not only the continuous spread of the composition (x), but also the continuous spread of the growth temperature (T) are given to the film by employing a special heating method. The boundary between the strained lattice and relaxed lattice is visualized by the concurrent XRD as functions of x and T in a high throughput fashion.

Convergent-beam parallel detection x-ray diffraction system for characterizing combinatorial epitaxial thin films

2000 ◽  
Author(s):  
Kazuhiko Omote ◽  
T. Kikuchi ◽  
J. Harada ◽  
Masashi Kawasaki ◽  
Akira Ohtomo ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Parallel Detection ◽  
Convergent Beam

scholarly journals A study of (111) oriented epitaxial thin films of In2O3 on cubic Y-doped ZrO2 by synchrotron based x-ray diffraction – ERRATUM

2012 ◽  
Vol 27 (18) ◽  
pp. 2447-2447 ◽  
Author(s):  
Anna Regoutz ◽  
Kelvin H.L. Zhang ◽  
Russell G. Egdell ◽  
Didier Wermeille ◽  
Roger A. Cowley
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray

X-Ray diffraction line broadening by stacking faults in SrBi2Nb2O9/SrTiO3 epitaxial thin films

2001 ◽  
Vol 391 (1) ◽  
pp. 42-46 ◽  
Author(s):  
A. Boulle ◽  
C. Legrand ◽  
R. Guinebretière ◽  
J.P. Mercurio ◽  
A. Dauger
Keyword(s):  
Thin Films ◽  
Stacking Faults ◽  
Diffraction Line ◽  
Epitaxial Thin Films ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

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