scholarly journals The Mechanism of Resistance Random Access Memory —Analysis for the Interface Between Metal/Transition Metal Oxide in the Presence of Electric Fields—

2011 ◽  
Vol 54 (10) ◽  
pp. 537-541
Author(s):  
Hirofumi KISHI ◽  
Hideaki KASAI
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Electric Fields ◽  
Random Access ◽  
Random Access Memory ◽  
Transition Metal Oxide ◽  
Access Memory ◽  
Mechanism Of Resistance ◽  
Resistance Random Access Memory

Reactive Ion Etching Process of Transition-Metal Oxide for Resistance Random Access Memory Device

2008 ◽  
Vol 47 (8) ◽  
pp. 6931-6933 ◽  
Author(s):  
Fumiyoshi Takano ◽  
Hisashi Shima ◽  
Hidenobu Muramatsu ◽  
Yutaka Kokaze ◽  
Yutaka Nishioka ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Reactive Ion Etching ◽  
Random Access ◽  
Random Access Memory ◽  
Transition Metal Oxide ◽  
Memory Device ◽  
Access Memory ◽  
Ion Etching ◽  
Resistance Random Access Memory

Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

2014 ◽  
Vol 85 ◽  
pp. 183-189 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Jung-Hui Chen ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Syuan-Yong Huang ◽  
...  
Keyword(s):  
Supercritical Co2 ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Mechanism Of Resistance ◽  
Resistance Random Access Memory ◽  
Supercritical Co2 Fluid

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

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