scholarly journals Surface and Interface Structures and Magnetic Properties of Ni and Ni75Fe25 Thin Films on Polyethylene Naphthalate Organic Substrates

2011 ◽  
Vol 54 (3) ◽  
pp. 203-206
Author(s):  
Hideo KAIJU ◽  
Nubla BASHEER ◽  
Taro ABE ◽  
Kenji KONDO ◽  
Akihiko HIRATA ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Organic Substrates ◽  
Polyethylene Naphthalate ◽  
Surface And Interface ◽  
Interface Structures

The Characterization of Thin Films and Layered Structures Using X-RAY Absorption and Reflection at Grazing Incidence

1984 ◽  
Vol 37 ◽  
Author(s):  
S. M. Heald ◽  
J. M. Tranquada ◽  
D. O. Welch ◽  
H. Chen
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
High Resolution ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray ◽  
Surface And Interface ◽  
Interface Structures ◽  
X Ray Absorption

AbstractX-rays at grazing incidence have a short, controllable penetration depth and are well suited as a probe of surface and interface structures. This paper examines the possibility applying grazing-incidence reflectivity and Extended X-Ray Absorption Fine Structure (EXAFS) measurements to such systems. Results are presented for an Al-Cu couple for which both high resolution reflectivity and interface EXAFS measurements are made. The latter results are the first interface specific EXAFS data to be reported. Distinct changes in both signals are observed upon annealing, demonstrating the potential of the techniques.

scholarly journals Interface Structures and Associated Magnetic Properties of Perovskite Oxide Thin Films Controlled by Substrate Symmetry

2011 ◽  
Vol 17 (S2) ◽  
pp. 1406-1407
Author(s):  
Y-M Kim ◽  
D Leonard ◽  
M Biegalski ◽  
H Christen ◽  
H Ambaye ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Perovskite Oxide ◽  
Oxide Thin Films ◽  
Interface Structures ◽  
Perovskite Oxide Thin Films

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Unipolar Resistive Switching Behavior Study in CuxO Thin Films at Different Annealing Temperatures

2012 ◽  
Vol 586 ◽  
pp. 24-29
Author(s):  
Ying Li ◽  
Gao Yang Zhao ◽  
Fen Shi
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Surface And Interface ◽  
Behavior Study ◽  
Interface Structures ◽  
Unipolar Resistive Switching

We investigated unipolar resistance switching in CuxO thin films. We studied on the resistive switching behavior associated with the annealing temperature of CuxO thin films and focused on HRTEM, XPS and AFM analyses. In this paper we investigated the surface and interface structures of CuxO films. Results show that there is a mount of oxygen content in the CuxO thin films which is contained in Cu (Ⅱ) oxides and Cu (Ⅰ) oxides. When annealing temperature increases the qualification of oxygen vacancies increase and more oxygen vacancies is connected with top and bottom electrode.

scholarly journals Fabrication of Quantum Cross Devices Using Ni Thin Films on Polyethylene Naphthalate Organic Substrates

2009 ◽  
Vol 33 (3) ◽  
pp. 242-246
Author(s):  
H. Kaiju ◽  
K. Kondo ◽  
A. Ono ◽  
N. Kawaguchi ◽  
J. H. Won ◽  
...  
Keyword(s):  
Thin Films ◽  
Organic Substrates ◽  
Polyethylene Naphthalate

DYNAMICS OF DIFFUSION AND ADSORPTION: ZnO/α-Al2O3(0001)

2007 ◽  
Vol 21 (11) ◽  
pp. 645-654 ◽  
Author(s):  
CHUN YANG ◽  
Y. R. LI ◽  
YU YI
Keyword(s):  
Thin Films ◽  
Density Functional ◽  
Atomic Layer ◽  
Potential Method ◽  
Heteroepitaxial Growth ◽  
Surface And Interface ◽  
Whole Process ◽  
Growth Modes ◽  
Α Al2o3 ◽  
Interface Structures

A heteroepitaxial growth model of the ZnO film on sapphire(0001) is calculated by using a plane wave ultrasoft pseudo-potential method based on the density functional theory. A strong chemical adsorption on the sapphire(0001) is observed. It is found that interfacial atoms have different diffusivity at 400°C, 600°C and 800°C. The temperature has a decisive effect on the surface and interface structures of ZnO /α -Al 2 O 3(0001) and on the growth mode of ZnO thin films. In the whole process of the adsorption and growth of ZnO , the diffusivity of O atoms is higher than that of Zn , and the interlayer diffusion has an important impact on growth of the thin films. There are two growth modes of ZnO on sapphire(0001), which is further demonstrated by theoretical calculation. It can be observed from the calculation that the vacancies of Zn where the atomic layer is near to the α -Al 2 O 3(0001) surface is more than that of O atoms.

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