scholarly journals Development of a Depth-resolved XMCD Method and Its Application to the Study of Surface and Interface Magnetic Properties of Metal Thin Films

Hyomen Kagaku ◽  
2005 ◽  
Vol 26 (3) ◽  
pp. 124-130 ◽  
Author(s):  
Kenta AMEMIYA ◽  
Toshiaki OHTA
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Metal Thin Films ◽  
Surface And Interface

Magnetic properties of sputter-deposited amorphous rare earth-transition metal thin films

Vacuum ◽  
1988 ◽  
Vol 38 (8-10) ◽  
pp. 797-800 ◽  
Author(s):  
C.E. Davies ◽  
R.E. Somekh ◽  
J.E. Evetts
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Rare Earth ◽  
Transition Metal ◽  
Metal Thin Films ◽  
Sputter Deposited

Domain Structure and Magnetic Properties of Epitaxial Rare Earth-Transition Metal Thin Films

2006 ◽  
Vol 13 ◽  
pp. 102-111 ◽  
Author(s):  
V. Neu ◽  
S. Fähler ◽  
A. Singh ◽  
A.R. Kwon ◽  
A.K. Patra ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Rare Earth ◽  
Transition Metal ◽  
Domain Structure ◽  
Metal Thin Films

Enhanced mechanical and magnetic properties of granular metal thin films

1991 ◽  
Vol 70 (6) ◽  
pp. 3275-3280 ◽  
Author(s):  
T. E. Schlesinger ◽  
R. C. Cammarata ◽  
A. Gavrin ◽  
John Q. Xiao ◽  
C. L. Chien ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Metal Thin Films

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Laser-Direct Patterning of Nanostructured Metal Thin Films

2010 ◽  
Vol 48 (2) ◽  
pp. 163-168 ◽  
Author(s):  
Hyunkwon Shin ◽  
Hyeongjae Lee ◽  
Hyeongjae Yoo ◽  
Ki-Soo Lim ◽  
Myeongkyu Lee
Keyword(s):  
Thin Films ◽  
Metal Thin Films ◽  
Direct Patterning ◽  
Nanostructured Metal
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