scholarly journals Silicon Single Crystal Wafer Holder with a Cold Trap and a Direct Current Heating Mechanism Mounted on a Conflat Flange with an Outer Diameter of 70 mm

Shinku ◽  
2007 ◽  
Vol 50 (1) ◽  
pp. 57-59 ◽  
Author(s):  
Eiichi KOBAYASHI ◽  
Akira NAMBU ◽  
Takuhiro KAKIUCHI ◽  
Kazuhiko MASE
Keyword(s):  
Single Crystal ◽  
Direct Current ◽  
Silicon Single Crystal ◽  
Cold Trap ◽  
Outer Diameter ◽  
Heating Mechanism ◽  
Crystal Wafer

Crystallographic cracking behavior in silicon single crystal wafer

2003 ◽  
Vol 103 (1) ◽  
pp. 49-56 ◽  
Author(s):  
J. Tan ◽  
S.X. Li ◽  
Y. Wan ◽  
F. Li ◽  
K. Lu
Keyword(s):  
Single Crystal ◽  
Silicon Single Crystal ◽  
Cracking Behavior ◽  
Crystal Wafer

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

Ultrasonic Spectroscopy of Silicon Single Crystal

2011 ◽  
Vol 18 (4) ◽  
Author(s):  
Petr Sedlak ◽  
Pavel Tofel ◽  
Vlasta Sedlakova ◽  
Jiri Majzner ◽  
Josef Sikula ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Single Crystal ◽  
Ultrasonic Spectroscopy

Unsteady 3D and analytical analysis of segregation process in floating zone silicon single crystal growth

2009 ◽  
Vol 45 (4) ◽  
pp. 549-556 ◽  
Author(s):  
K. Lācis ◽  
◽  
A. Muižnieks ◽  
N. Jēkabsons ◽  
A. Rudevičs ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone ◽  
Analytical Analysis ◽  
Segregation Process
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