Precise calculations of the influence of HF EM forces on the melt hydrodynamics for FZ silicon single crystal growth

2005 ◽  
Vol 41 (2) ◽  
pp. 105-122 ◽  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal

Unsteady 3D and analytical analysis of segregation process in floating zone silicon single crystal growth

2009 ◽  
Vol 45 (4) ◽  
pp. 549-556 ◽  
Author(s):  
K. Lācis ◽  
◽  
A. Muižnieks ◽  
N. Jēkabsons ◽  
A. Rudevičs ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone ◽  
Analytical Analysis ◽  
Segregation Process

Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth

2002 ◽  
Vol 5 (4-5) ◽  
pp. 347-351 ◽  
Author(s):  
Erich Tomzig ◽  
Janis Virbulis ◽  
Wilfried von Ammon ◽  
Yuri Gelfgat ◽  
Leonid Gorbunov
Keyword(s):  
Crystal Growth ◽  
Magnetic Fields ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Combined Magnetic Fields

Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth

2007 ◽  
Vol 131-133 ◽  
pp. 283-288 ◽  
Author(s):  
A.I. Prostomolotov ◽  
N.A. Verezub
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Single Crystal ◽  
Defect Formation ◽  
Integrated Approach ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Intrinsic Point Defect ◽  
Formation Mechanisms ◽  
Growing Conditions

The features of microdefect formation during dislocation-free Si single crystals are considered in connection with the specific thermal CZ growing conditions. For this purpose the thermal crystal growth histories are calculated by means of a global thermal mathematical model and then on their basis the intrinsic point defect recombination and microdefect formation are modeled numerically. Difficulty of such integrated approach is explained by of the complicated and conjugated thermal modeling and a presence of various temperature zones in growing single crystal, answering to various defect formation mechanisms.

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