scholarly journals Study on Optical Reflection Property from Multilayer on Si Substrate Including Nanoparticles in SiO2 Layer

Shinku ◽  
2003 ◽  
Vol 46 (9) ◽  
pp. 698-702
Author(s):  
Nobutoshi ARAI ◽  
Hiroshi TSUJI ◽  
Masanori MOTONO ◽  
Hiromitsu SUGAWARA ◽  
Takuya MATSUMOTO ◽  
...  
Keyword(s):  
Sio2 Layer ◽  
Si Substrate ◽  
Optical Reflection ◽  
Reflection Property

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Single-mode dynamic X-ray diffraction for Si and Si nanowires on Si

2014 ◽  
Vol 47 (1) ◽  
pp. 285-290
Author(s):  
Hsin-Yi Chen ◽  
Pei-Tzi Chu ◽  
Shih-Lin Chang
Keyword(s):  
Azimuthal Angle ◽  
Single Mode ◽  
Total Reflection ◽  
Wide Angle ◽  
Si Nanowires ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Optical Reflection ◽  
Mode Excitation

A method is reported of realizing single-mode diffraction using singly polarized X-ray wide-angle incidence and grazing-emergence diffraction from a bare Si substrate and from Si nanowires on an Si substrate. For a bare Si substrate, the surface-diffracted and specularly reflected beams of single-mode excitation are separated owing to the extremely asymmetric diffraction at grazing emergence. For Si wires on Si, single-mode diffraction is achieved by tuning the X-ray energy or the azimuthal angle under the conditions of total reflection. This finding opens up new opportunities for using crystal diffraction, in addition to optical reflection or refraction, for the design of coherent X-ray optics.

scholarly journals Influence of SiO2 Layer on the Dielectric Function of Gold Nanoparticles on Si Substrate

2012 ◽  
Vol 15 (1) ◽  
pp. K5 ◽  
Author(s):  
S. Zhu ◽  
T. P. Chen ◽  
Y. C. Liu ◽  
Y. Liu ◽  
S. F. Yu
Keyword(s):  
Gold Nanoparticles ◽  
Dielectric Function ◽  
Sio2 Layer ◽  
Si Substrate

Flexible control over optical reflection property of metallic surfaces via pulse laser

2019 ◽  
Vol 31 (2) ◽  
pp. 022502
Author(s):  
Xiao Luo ◽  
Mingyong Cai ◽  
Weijian Liu ◽  
Changhao Chen ◽  
Rui Pan ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Metallic Surfaces ◽  
Flexible Control ◽  
Optical Reflection ◽  
Reflection Property

Evaluation of nanoparticles embedded in thin silicon dioxide film by optical reflection property

2005 ◽  
Vol 196 (1-3) ◽  
pp. 44-49 ◽  
Author(s):  
Nobutoshi Arai ◽  
Hiroshi Tsuji ◽  
Kazuya Ueno ◽  
Takuya Matsumoto ◽  
Yasuhito Gotoh ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Film ◽  
Optical Reflection ◽  
Reflection Property ◽  
Thin Silicon ◽  
Dioxide Film

Oersted-field-induced switching of a ferromagnet on a Si substrate via localized dielectric breakdown of the native SiO2 layer

2017 ◽  
Vol 111 (1) ◽  
pp. 012401
Author(s):  
N. I. Polushkin ◽  
M. V. Sapozhnikov ◽  
N. S. Gusev ◽  
S. N. Vdovichev ◽  
M. N. Drozdov
Keyword(s):  
Dielectric Breakdown ◽  
Sio2 Layer ◽  
Si Substrate

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

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