scholarly journals Field-induced Effects of Residual Gallium Atoms on High-electric-field Diamond Device Structures Fabricated by Focused Ion Beam

Shinku ◽  
2003 ◽  
Vol 46 (3) ◽  
pp. 225-228
Author(s):  
Mitsuhiro HAMADA ◽  
Tokuyuki TERAJI ◽  
Toshimichi ITO
Keyword(s):  
Electric Field ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Electric Field ◽  
Device Structures

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

scholarly journals In Situ Delineation Etch Reveals Subtle Detail in SEM Images of Ion Milled Cross Sections Enabling In-Fab 3-D Metrology and Characterization

2000 ◽  
Vol 8 (2) ◽  
pp. 36-39
Author(s):  
Clive Chandler
Keyword(s):  
Sample Preparation ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Automated System ◽  
Sem Images ◽  
Difficult Time ◽  
Device Structures ◽  
Wet Etch ◽  
Conventional Sample

Control of layer thickness is critically important in the manufacture of semiconductor devices. Cross-sectioning exposes device structures for direct examination but conventional sample preparation procedures are difficult, time consuming, and grossly destructive. Cross sections created by focused ion beam (FIB) milling are easier, faster, and less destructive but have not offered the clear layer delineation provided by etching in the conventional sample preparation process. A new gas etch capability (Delineation Etch™ from FEI Company) offers results that are equivalent to conventional wet-etch preparations in a fraction of the time from a single, automated system in the fab without destroying the wafer. The new etch process also has application in milling high-aspect-ratio holes to create contacts to buried metal layers, and in deprocessing devices to reveal silicon and polysilicon structures.

Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

1999 ◽  
Vol 595 ◽  
Author(s):  
M. Kuball ◽  
M. Benyoucef ◽  
F.H. Morrissey ◽  
C.T. Foxon
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Device Structure ◽  
Ion Beam Etching ◽  
Nanometer Size ◽  
Nano Fabrication ◽  
Micro Raman Spectroscopy ◽  
Device Structures ◽  
Effect Transistor

AbstractWe report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

scholarly journals Accurate Sub-micron Device Delayering of Plan View TEM Specimens By Ar Ion Milling

2021 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
R. Li ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Failure Mechanisms ◽  
Specimen Preparation ◽  
New Materials ◽  
Ion Milling ◽  
Plan View ◽  
Site Specific ◽  
New Device ◽  
Device Structures

Abstract With the introduction of new materials, new device structures, and shrinking device dimensions, failure mechanisms evolve, which can make identifying defects challenging. Therefore, an accurate and controllable delayering process to target defects is desirable. We present a workflow comprised of bulk device delayering by broad Ar ion beam milling, plan view specimen preparation by focused ion beam tool, followed by site-specific delayering by concentrated Ar ion beam milling. The result is an accurately delayered device, without sample preparation-induced artifacts, that is suitable for uncovering defects during physical failure analysis.

Applications of Focused Ion Beams to Optoelectronic Device Fabrication - An Overview

1988 ◽  
Vol 126 ◽  
Author(s):  
Randall L. Kubena
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Ion Beams ◽  
Device Fabrication ◽  
Focused Ion Beams ◽  
The Past ◽  
Device Structures ◽  
Circuit Fabrication ◽  
Major Application

ABSTRACTFocused-ion-beam (FIB) technology has been applied during the past decade to a wide variety of device and circuit fabrication procedures. The ability to perform maskless implantation, selective sputtering and deposition, and high resolution lithography with a single system has allowed FIB researchers to explore a large number of unique fabrication processes for silicon, GaAs, and heterojunction devices. Currently, exploratory studies in advanced optoelectronic device fabrication employ the largest number of diverse FIB techniques. In this paper, the major application areas of FIB technology to optoelectronic research are reviewed, and possible uses of ultrasmall (≤500 Å) ion beams in the fabrication of optoelectronic device structures with novel properties are described.

Routine Device-Level Atom Probe Analysis

2014 ◽  
Author(s):  
D.F. Lawrence ◽  
R.M. Ulfig ◽  
D.J. Larson ◽  
D.P. Olson ◽  
D.A. Reinhard ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Focused Ion Beam ◽  
Compositional Data ◽  
Ion Beam ◽  
Atom Probe ◽  
Design Rule ◽  
Specimen Preparation ◽  
Device Structures ◽  
Drain Region ◽  
Reliable Methods

Abstract Continuing advances in Atom Probe Tomography and Focused Ion Beam Scanning Electron Microscope technologies along with the development of new specimen preparation approaches have resulted in reliable methods for acquiring 3D subnanometer compositional data from device structures. The routine procedure is demonstrated here by the analysis of the silicon-germanium source-drain region of a field effect transistor from a de-packaged off-the-shelf 28 nm design rule graphics chip. The center of the silicon-germanium sourcedrain region was found to have approximately 180 ppm of boron and the silicide contact was found to contain both titanium and platinum.

scholarly journals Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

2000 ◽  
Vol 5 (S1) ◽  
pp. 950-956
Author(s):  
M. Kuball ◽  
M. Benyoucef ◽  
F.H. Morrissey ◽  
C.T. Foxon
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Device Structure ◽  
Ion Beam Etching ◽  
Nanometer Size ◽  
Nano Fabrication ◽  
Micro Raman Spectroscopy ◽  
Device Structures ◽  
Effect Transistor

We report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

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