scholarly journals Development of a High Resolution X-ray Spectroscope Combined with Reflection High Energy Electron Diffraction.

Shinku ◽  
2001 ◽  
Vol 44 (3) ◽  
pp. 135-138
Author(s):  
Takafumi SATO ◽  
Makoto KAWAMURA ◽  
Kuniaki ORIKASA ◽  
Nobuaki MINAMI ◽  
Koyu OTA ◽  
...  
1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.


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