scholarly journals ITO thin films prepared by DC magnetron sputtering method using ITO target. Preparation of ITO films on low temperature glass substrate.

Shinku ◽  
1989 ◽  
Vol 32 (3) ◽  
pp. 336-340
Author(s):  
Yoshiyuki TSUDA ◽  
Hideaki YASUI ◽  
Hidenobu SINTAKU ◽  
Hiroyoshi TANAKA ◽  
Masahide YOKOYAMA
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Dc Magnetron Sputtering ◽  
Target Preparation ◽  
Ito Thin Films ◽  
Ito Films

Development and utility of a new 3-D magnetron source for high rate deposition of highly conductive ITO thin films near room temperature

2018 ◽  
Vol 20 (7) ◽  
pp. 4818-4830 ◽  
Author(s):  
Long Wen ◽  
Bibhuti Bhusan Sahu ◽  
Jeon Geon Han
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
High Rate ◽  
High Quality ◽  
Low Temperature Deposition ◽  
Ito Thin Films ◽  
Temperature Deposition ◽  
Ito Films

This study reports the high rate and low-temperature deposition of high-quality ITO films using a new 3-D confined magnetron sputtering method.

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

The effect of post-annealing under CdCl2 atmosphere on the properties of ITO thin films deposited by DC magnetron sputtering

2009 ◽  
Vol 21 (5) ◽  
pp. 441-444 ◽  
Author(s):  
Shenghao Wang ◽  
Jingquan Zhang ◽  
Bo Wang ◽  
Lianghuan Feng ◽  
Yaping Cai ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Post Annealing ◽  
Ito Thin Films

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (05) ◽  
pp. 1350045 ◽  
Author(s):  
BO HE ◽  
LEI ZHAO ◽  
JING XU ◽  
HUAIZHONG XING ◽  
SHAOLIN XUE ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
High Quantum Efficiency ◽  
Ito Thin Films ◽  
Ito Films

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Optimization in Synthesis of ITO Thin Films Fabricated by DC Magnetron Sputtering Method

2014 ◽  
Vol 575 ◽  
pp. 254-263 ◽  
Author(s):  
Hua Jing Zheng ◽  
Chi Zhang ◽  
Zheng Ruan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Magnetron Sputtering ◽  
Water Pressure ◽  
Dc Magnetron Sputtering ◽  
Sputtering Power ◽  
Conductive Substrate ◽  
Ito Thin Films ◽  
Sputtering Pressure

With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Series of research and exploration are presented on DC magnetron sputtering method for preparing ITO thin film. With substrate temperature of 60 °C, sputtering power of 200W,sputtering pressure of 1 mTorr, water pressure of 2×10-5Torr, the sheet resistance of the ITO conductive substrate is 53 Ω/□ and the transmittance is 83%.

Effect of the nitrogen–oxygen ratio on the position of N atoms in the TiO2lattice of N-doped TiO2thin films prepared by DC magnetron sputtering

CrystEngComm ◽  
2018 ◽  
Vol 20 (29) ◽  
pp. 4133-4140 ◽  
Author(s):  
Haihua Wu ◽  
Dingyu Yang ◽  
Xinghua Zhu ◽  
Peng Gu ◽  
Hui Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Glass Substrate ◽  
Dc Magnetron Sputtering ◽  
Nitrogen Doped ◽  
Oxygen Ratio

The nitrogen-doped TiO2thin films are deposited on the glass substrate by using a direct-current (DC) magnetron sputtering technique.

The Effects of SiO, SiON on IZO Thin Film Deposited by DCMG Method

2007 ◽  
Vol 124-126 ◽  
pp. 455-458
Author(s):  
Seong Hoon Kim ◽  
Han Ki Yoon ◽  
Riichi Murakami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxygen Content ◽  
Glass Substrate ◽  
Single Layer ◽  
Target Type ◽  
Dc Magnetron Sputtering ◽  
Izo Thin Film ◽  
Pet Substrate

The thin films of SiO and SiON were deposited individually by the inclination opposite target type DC magnetron sputtering equipment onto the glass substrate. And it was deposited IZO(In2O3 (90wt.%) + ZnO(10wt.%)) on those films. The effects of SiO and SiON were investigated on properties of IZO thin films. AFM images of IZO thin film included SiON film were shown smoother surfaces than that included SiO film. Multi layers of IZO were shown good properties because it have high transmissivity. Resistivity is in inverse proportion to Mobility. If it deposited SiO and SiON, generate layer of change between two layers(SiO or SiON + Substrate). Layer of change influenced resistance because Oxygen content was more than single layer of IZO. In case of using PET substrate, it influenced stronger than Glass substrate for rigid gas permeable and osmosis.

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