scholarly journals Hydrogenation effect on the crystallization of alloys leading to the development of nanostructured states

2008 ◽  
Vol 1 (1) ◽  
pp. 102-104
Author(s):  
N.E. SKRYABINA ◽  
◽  
D. FRUCHART ◽  
A.V. SHELYAKOV ◽  
◽  
...  
Keyword(s):  
Nanostructured States ◽  
Hydrogenation Effect

Effect of Hydrogen on the Development of Superplastic Deformation in the Submicrocrystalline Ti–6Al–4V Alloy

2016 ◽  
Vol 838-839 ◽  
pp. 344-349 ◽  
Author(s):  
Galina P. Grabovetskaya ◽  
Ekaterina N. Stepanova ◽  
Ilya V. Ratochka ◽  
I.P. Mishin ◽  
Olga V. Zabudchenko
Keyword(s):  
Solid Solution ◽  
Plastic Deformation ◽  
Flow Stress ◽  
Superplastic Deformation ◽  
Deformation Localization ◽  
Solid Solution Strengthening ◽  
Solution Strengthening ◽  
Hydrogenation Effect

Hydrogenation effect on the development of superplastic deformation in the submicrocrystalline Ti–6Al–4V alloy at temperatures (0.4–0.5)Тmelt is investigated. Hydrogenation of the submicrocrystalline Ti–6Al–4V alloy to 0.26 mass% during superplastic deformation is found to result in solid solution strengthening, plastic deformation localization, and as a consequence, decrease of the deformation to failure. Possible reasons for the decrease of the flow stress and increase of the deformation to failure in the submicrocrystalline Ti–6Al–4V–0.26H alloy during deformation under conditions of superplasticity and simultaneous hydrogen degassing from the alloy are discussed.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Hydrogenation effect on microstructure and mechanical properties of Mg-Gd-Y-Zn-Zr alloys

2018 ◽  
Vol 719 ◽  
pp. 171-177 ◽  
Author(s):  
Rimma Lapovok ◽  
Emil Zolotoyabko ◽  
Alex Berner ◽  
Vladimir Skripnyuk ◽  
Eugene Lakin ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Microstructure And Mechanical Properties ◽  
Hydrogenation Effect ◽  
Zr Alloys

scholarly journals Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells

2019 ◽  
Vol 11 (14) ◽  
pp. 3784
Author(s):  
Ji Yeon Hyun ◽  
Soohyun Bae ◽  
Yoon Chung Nam ◽  
Dongkyun Kang ◽  
Sang-Won Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Atom Probe ◽  
Silicon Solar Cells ◽  
Capacitance Voltage ◽  
Passivation Layers ◽  
Chemical Passivation ◽  
Electron Energy Loss ◽  
Hydrogenation Effect ◽  
Antireflective Properties

Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al2O3 structure using electron energy-loss spectroscopy.

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