scholarly journals Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells

2019 ◽  
Vol 11 (14) ◽  
pp. 3784
Author(s):  
Ji Yeon Hyun ◽  
Soohyun Bae ◽  
Yoon Chung Nam ◽  
Dongkyun Kang ◽  
Sang-Won Lee ◽  
...  

Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al2O3 structure using electron energy-loss spectroscopy.

1995 ◽  
Vol 406 ◽  
Author(s):  
Ju-Hyung Lee ◽  
Yanzhen Xu ◽  
Veronica A. Burrows ◽  
Paul F. McMillan

AbstractA new GaAs surface passivation method, CS2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS2 treatment of GaAs surfaces at 350°C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred Å. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (CV) characteristics with low hysteresis.


2011 ◽  
Vol 8 ◽  
pp. 487-492 ◽  
Author(s):  
F. Book ◽  
T. Wiedenmann ◽  
G. Schubert ◽  
H. Plagwitz ◽  
G. Hahn

2016 ◽  
Vol 16 (10) ◽  
pp. 10659-10664 ◽  
Author(s):  
Nagarajan Balaji ◽  
Cheolmin Park ◽  
Seunghwan Lee ◽  
Youn-Jung Lee ◽  
Junsin Yi

2020 ◽  
pp. 413-441
Author(s):  
Shui-Yang Lien ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Pao-Hsun Huang

2011 ◽  
Vol 326 ◽  
pp. 012052 ◽  
Author(s):  
M Duchamp ◽  
C B Boothroyd ◽  
A Kovács ◽  
S Kadkhodazadeh ◽  
T Kasama ◽  
...  

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