scholarly journals Defect formation during synthesis and welding of silver nanowires for solar cell applications

10.30544/452 ◽  
2020 ◽  
Vol 25 (04) ◽  
pp. 287-299
Author(s):  
Vuk Radmilovic ◽  
Velimir R. Radmilović
Keyword(s):  
Defect Formation ◽  
Silver Nanowires ◽  
Stacking Faults ◽  
Structural Defects ◽  
Face Centered Cubic ◽  
Growth Morphology ◽  
Morphology Development ◽  
Face Centered ◽  
Post Synthesis ◽  
Stacking Fault Energies

Structural defects such as stacking faults and twins, observed in many face-centered cubic (FCC) structured metals and alloys with low stacking fault energies, in general, play an important role in microstructure evolution, and in particular, in nucleation and crystal growth, morphology development, and phase transformations during synthesis as well as post-synthesis processes.

Direct observation of Face-centered cubic zirconium phase growth-induced stacking faults in Zr3Ge secondary phase nanoparticle

2022 ◽  
Vol 210 ◽  
pp. 114461
Author(s):  
Fuzhou Han ◽  
Geping Li ◽  
Fusen Yuan ◽  
Yingdong Zhang ◽  
Wenbin Guo ◽  
...  
Keyword(s):  
Direct Observation ◽  
Stacking Faults ◽  
Secondary Phase ◽  
Face Centered Cubic ◽  
Phase Growth ◽  
Face Centered

scholarly journals Structure and stacking order in crystals of asymmetric dumbbell-like colloids

2015 ◽  
Vol 48 (1) ◽  
pp. 238-243 ◽  
Author(s):  
Antara Pal ◽  
Janne-Mieke Meijer ◽  
Joost R. Wolters ◽  
Willem K. Kegel ◽  
Andrei V. Petukhov
Keyword(s):  
Crystalline Structure ◽  
Diffuse Scattering ◽  
Colloidal Particles ◽  
Three Dimensional ◽  
Stacking Faults ◽  
Face Centered Cubic ◽  
Hexagonal Close Packed ◽  
Stacking Order ◽  
X Ray Scattering ◽  
Face Centered

The crystalline structure assembled out of charge-stabilized asymmetric dumbbell-like colloidal particles in ethyl alcohol by sedimentation has been probed using small-angle X-ray scattering with microradian resolution. The existence of plastic face-centered cubic crystals was inferred from the observed Bragg peaks. The presence of stacking faults and the mosaic structure of the sample lead to the appearance of diffuse scattering, forming Bragg scattering cylinders in the three-dimensional reciprocal space. The quality of the crystalline structure, as ascertained from a detailed analysis of the diffuse scattering intensity distribution, indicates the presence of only 1.5% of stacking faults between the hexagonal close-packed layers.

Stacking Faults in Crystals

1968 ◽  
Vol 26 ◽  
pp. 250-251
Author(s):  
P. C. J. Gallagher
Keyword(s):  
Stacking Faults ◽  
Elastic Equilibrium ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Major Influence ◽  
Face Centered Cubic ◽  
Degree Of Dissociation ◽  
Partial Dislocations ◽  
Layer Structures ◽  
Face Centered

Stacking faults are an important substructural feature of many materials, and have been widely studied in layer structures (e.g. talc) and in crystals with hexagonal and face centered cubic structure. Particular emphasis has been placed on the study of faulted defects in f.c.c. alloys, since the width of the band of fault between dissociated partial dislocations has a major influence on mechanical properties.Under conditions of elastic equilibrium the degree of dissociation reflects the balance of the repulsive force between the partials bounding the fault, and the attractive force associated with the need to minimize the energy arising from the misfits in stacking sequence. Examples of two of the faulted defects which can be used to determine this stacking fault energy, Υ, are shown in Fig. 1. Intrinsically faulted extended nodes (as at A) have been widely used to determine Υ, and examples will be shown in several Cu and Ag base alloys of differing stacking fault energy. The defect at B contains both extrinsic and intrinsic faulting, and readily enables determination of both extrinsic and intrinsic fault energies.

Ultrastrong Al0.1CoCrFeNi high-entropy alloys at small scales: effects of stacking faults vs. nanotwins

Nanoscale ◽  
2018 ◽  
Vol 10 (28) ◽  
pp. 13329-13334 ◽  
Author(s):  
Xiaobin Feng ◽  
Jinyu Zhang ◽  
Kai Wu ◽  
Xiaoqing Liang ◽  
Gang Liu ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Maximum Strength ◽  
High Entropy Alloy ◽  
High Entropy Alloys ◽  
Face Centered Cubic ◽  
High Entropy ◽  
Small Scales ◽  
Face Centered

The present stacking faulted and nanotwinned Al0.1CoCrFeNi high-entropy alloy pillars achieved the maximum strength among face-centered cubic structured metals.

Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
Noboru Ohtani ◽  
Jun Takahashi ◽  
Masakazu Katsuno ◽  
Hirokatsu Yashiro ◽  
Masatoshi Kanaya
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Defect Formation ◽  
Stacking Faults ◽  
Growth Direction ◽  
Bulk Crystal ◽  
Structural Defects ◽  
Bulk Crystals ◽  
Bulk Crystal Growth ◽  
Sublimation Growth

AbstractThe defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation

Sign in / Sign up

Export Citation Format

Share Document