scholarly journals Anti-Reflective coating for semiconductor laser chip

1996 ◽  
Vol 8 (3-4) ◽  
pp. 216-216
Author(s):  
Sinichirou TOMIOKA ◽  
Sinich KOIZUMI ◽  
Kenya GOTO
Keyword(s):  
Semiconductor Laser ◽  
Reflective Coating ◽  
Laser Chip

Study on Talbot phase-locking conditions of tapered semiconductor laser chip array

2021 ◽  
Author(s):  
Xiaofan Wang ◽  
Jing Li ◽  
Tian Lan ◽  
Renjie Ruan ◽  
Yanhong Ma ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Phase Locking ◽  
Laser Chip

scholarly journals Direct generation of broadband chaos by a monolithic integrated semiconductor laser chip

2013 ◽  
Vol 21 (20) ◽  
pp. 23358 ◽  
Author(s):  
Jia-Gui Wu ◽  
Ling-Juan Zhao ◽  
Zheng-Mao Wu ◽  
Dan Lu ◽  
Xi Tang ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Laser Chip ◽  
Direct Generation

Semiconductor laser chip stabilization by Si3N4 microresonator and Kerr comb generation

2018 ◽  
Author(s):  
S. Agafonova ◽  
A. Voloshin ◽  
A. Gorodnitskiy ◽  
A. Shitikov ◽  
M. Pfeiffer ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Laser Chip ◽  
Comb Generation

scholarly journals Power of Ambient Tempurature on the Performance of the Semiconductor Laser

2018 ◽  
Vol 9 (3) ◽  
pp. 606
Author(s):  
J. S. Ashwin ◽  
N. Manoharan
Keyword(s):  
Ambient Temperature ◽  
Semiconductor Laser ◽  
Temperature Changes ◽  
Chip Temperature ◽  
Laser Chip ◽  
Simulation Results ◽  
The Impact

<p>In this paper, the impact of surrounding temperature on the execution of the semiconductor laser is systematically examined in principle. We constructed the recreation display and the simulation results about showed that ambient temperature changes would influence the laser chip temperature, bringing about the laser key parameters in reproduction comes about.</p>

scholarly journals Исследование пространственной и токовой динамики оптических потерь в полупроводниковых лазерных гетероструктурах методом оптического зондирования

2020 ◽  
Vol 54 (8) ◽  
pp. 734
Author(s):  
П.С. Гаврина ◽  
О.С. Соболева ◽  
А.А. Подоскин ◽  
А.Е. Казакова ◽  
В.А. Капитонов ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Probe Beam ◽  
Carrier Density ◽  
Optical Probe ◽  
Charge Carriers ◽  
Probe Radiation ◽  
Optical Losses ◽  
Absolute Value ◽  
Fabry Perot ◽  
Laser Chip

The spatiotemporal dynamics of optical losses and carrier density in a heterostructure of a semiconductor laser with a segmented contact were studied using an optical probe technique based on the coupling of probe radiation with a wavelength of 1560 nm into a semiconductor laser chip under investigation based on an AlGaAs/ InGaAs/ GaAs heterostructure and emitting at a wavelength of 1010 nm. It has been shown that the use of a probe beam with a wavelength of 1560 nm makes it possible to ensure the sensitivity of the measurement of internal optical losses of no worse than 1 cm-1. The use of a segmented design of the current pumping region made it possible to estimate the absolute value of internal optical losses. It was shown that a change in the configuration of the Fabry-Perot eigenmodes of the laser affects the distribution of charge carriers and internal optical losses both in the current pump region and in the passive part of the laser chip that is not pumped by the current.

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