scholarly journals Preparation of magnetostrictive Fe-Al thin film using by plasma process

2005 ◽  
Vol 17 (3/4) ◽  
pp. 190-193 ◽  
Author(s):  
Konosuke MURAMATSU ◽  
Yoshihito MATSUMURA
Keyword(s):  
Thin Film ◽  
Plasma Process ◽  
Al Thin Film

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

Giant magnetostrictive thin film formation by plasma process

2003 ◽  
Vol 169-170 ◽  
pp. 613-615 ◽  
Author(s):  
T. Yamaki ◽  
M. Sekine ◽  
T. Haraki ◽  
H. Uchida ◽  
Y. Matsumura
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Plasma Process ◽  
Thin Film Formation

An x‐ray optical study of layered phase growth in Au‐Al thin film couples

1980 ◽  
Vol 51 (9) ◽  
pp. 4808-4812 ◽  
Author(s):  
A. Wagendristel ◽  
H. Schurz ◽  
E. Ehrmann‐Falkenau ◽  
H. Bangert
Keyword(s):  
Thin Film ◽  
Optical Study ◽  
Phase Growth ◽  
X Ray ◽  
Al Thin Film

scholarly journals Influence of Thermal Annealing on the Electrical Properties of Poly(3-hexylthiophene)-Based Thin Film Diodes

2007 ◽  
Vol 62 (10-11) ◽  
pp. 609-619 ◽  
Author(s):  
Zivayi Chiguvare ◽  
Jürgen Parisi ◽  
Vladimir Dyakonov
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Indium Tin Oxide ◽  
Bulk Heterojunction ◽  
Polymer Chains ◽  
Hole Injection ◽  
Before And After ◽  
Output Characteristics ◽  
Al Thin Film ◽  
Poly Styrene Sulfonate

The effects of thermal annealing on the bulk transport properties of poly(3-hexylthiophene) (P3HT) were studied by analyzing room temperature current-voltage characteristics of polymer thin films sandwiched between indium tin oxide/poly[ethylene dioxythiophene]:poly[styrene sulfonate] (ITO/PEDOT:PSS) and aluminum electrodes, before and after a thermal annealing step. It was observed that annealing takes place in two steps: (1) Dedoping of the polymer of impurities such as oxygen, remnant solvent, water, leading to a decrease in the conductivity of the film, and (2) thermally induced motion of the polymer chains leading to closer packing, thus, stronger inter-chain interaction and, consequently, increase in conductivity. It was also observed that the ITO/PEDOT:PSS/P3HT hole injection barrier increases on annealing the ITO/PEDOT:PSS/P3HT/Al thin film devices. The implications of impurity dedoping and closer packing on the output characteristics of bulk heterojunction polymer-fullerene thin film solar cells are discussed.

Aging of Al‐Aluminum Oxide‐Al Thin Film Sandwiches

1962 ◽  
Vol 33 (5) ◽  
pp. 1901-1902 ◽  
Author(s):  
James Penley
Keyword(s):  
Thin Film ◽  
Aluminum Oxide ◽  
Al Thin Film
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