scholarly journals Cathodic Electrodeposition and Characterization of ni3se2 thin Films

2017 ◽  
Vol 21 (1) ◽  
pp. 19 ◽  
Author(s):  
K Anuar ◽  
Z Zainal ◽  
N Saravanan ◽  
A.R Kartini
Keyword(s):  
Thin Films ◽  
Titanium Substrate ◽  
Linear Sweep Voltammetry ◽  
Xrd Analysis ◽  
Band Gap Energy ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
Cathodic Electrodeposition ◽  
Type Semiconductor ◽  
P Type

Nickel selenide thin films have been potentiostatically electrodeposited on titanium substrate at room temperature from aqueous solution containing Ni-EDTA and Na2SeO3. Various deposition potentials were attempted in order to determine the optimum electrodeposition potential. The films were characterised using x-ray diffraction analysis (XRD) and the photoactivity of the electrosynthesised films were studied using linear sweep voltammetry (LSV). The band-gap energy was determined using UV-visible spectroscopy. The XRD analysis indicated the formationof polycrystalline Ni3Se2. The film exhibited p-type semiconductor behaviour with good photosensitivity. The bandgap energy (Eg) was about 1.4eV.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Electrodeposition and Properties of CuInS2 Thin Films

2013 ◽  
Vol 690-693 ◽  
pp. 1659-1663
Author(s):  
Hai Fang Zhou ◽  
Xiao Hu Chen
Keyword(s):  
Thin Films ◽  
Photocurrent Density ◽  
Enhancement Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Ito Glass ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550°C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20×1017 cm−3, respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 mA/cm2 under 255 lx illumination, the sample shows the photo-enhancement effect.

scholarly journals Characterization of Ag-Doped p-Type SnO Thin Films Prepared by DC Magnetron Sputtering

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Hoai Phuong Pham ◽  
Thanh Giang Le Thuy ◽  
Quang Trung Tran ◽  
Hoang Hung Nguyen ◽  
Huynh Tran My Hoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Carrier Scattering ◽  
Semiconductor Behavior ◽  
Type Semiconductor ◽  
Diffraction Patterns ◽  
P Type ◽  
Tin Monoxide

Crystalline structure and optoelectrical properties of silver-doped tin monoxide thin films with different dopant concentrations prepared by DC magnetron sputtering are investigated. The X-ray diffraction patterns reveal that the tetragonal SnO phase exhibits preferred orientations along (101) and (110) planes. Our results indicate that replacing Sn2+ in the SnO lattice with Ag+ ions produces smaller-sized crystallites, which may lead to enhanced carrier scattering at grain boundaries. This causes a deterioration in the carrier mobility, even though the carrier concentration improves by two orders of magnitude due to doping. In addition, the Ag-doped SnO thin films show a p-type semiconductor behavior, with a direct optical gap and decreasing transmittance with increasing Ag dopant concentration.

Effect of Deposition Voltage on the Composition, Morphology and Optical Properties of ZnS Thin Films Prepared by Cathodic Electrodeposition

2010 ◽  
Vol 105-106 ◽  
pp. 348-350
Author(s):  
Hui Zhu ◽  
Jian Feng Huang ◽  
Li Yun Cao ◽  
Yan Wang ◽  
Xie Rong Zeng
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Zinc Sulphide ◽  
X Ray Diffraction ◽  
Cathodic Electrodeposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Voltage

Zinc sulphide (ZnS) thin films were deposited on the indium tin oxide (ITO) substrates by a novel, simple cathodic electrodeposition method under atmospheric pressure. These thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence spectrum (PL) at room temperature. The effects of deposition voltage on the phase composition, morphology and photoluminescence behavior of the thin films were investigated. XRD analysis shows that the deposited thin films is highly preferential growth along (200) orientation. Both AFM and XRD analyses indicate that the surface of the ZnS thin films is composed of uniform grains of around 50 nm in diameter. With the increase in the deposition voltages, the crystallization of the obtained thin films improves and the grain size of the ZnS thin films increases. Photoluminescence emission peaks are observed at at 475~490 nm and 500 ~530 nm at room temperature for an excitation of 210 nm.

scholarly journals Effects of Preparation Conditions on the CuInS2Films Prepared by One-Step Electrodeposition Method

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Rongfeng Guan ◽  
Liu Cao ◽  
Qian Sun ◽  
Yuebin Cao
Keyword(s):  
Thin Films ◽  
Sulfur Content ◽  
Indium Tin Oxide ◽  
Deposition Potential ◽  
X Ray Diffraction ◽  
Preparation Conditions ◽  
Sulfurization Temperature ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

CuInS2thin films were prepared onto indium tin oxide (ITO) substrates by sulfurization of electrodeposited CuxInySzprecursor films under S atmosphere. The influences of deposition potential, Cu2+/In3+ratio, sulfurization temperature, and sulfur content on the CuInS2thin films were investigated. Phases and structures were characterized by powder X-ray diffraction and Raman spectroscopy; surface morphology was characterized by Scanning Electron Microscopy; optical and electrical properties were characterized by UV-Vis absorption and Mott-Schottky curves, respectively. As a result, the optimal well-crystallized CuInS2films preparation parameters were determined to be deposition potential of −0.8 V, Cu2+/In3+ratio of 1.4, sulfur content of 1 g, and the sulfurization temperature of 550°C for 1 h; CuInS2thin films prepared by one-step electrodeposition present the p-type semiconductor, with thickness about 4-5 μm and their optical band gaps in the range of 1.53~1.55 eV.

scholarly journals Electrodeposition of ternary compounds for novel PV application and optimisation of electrodeposited CdMnTe thin-films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. E. Alam ◽  
O. I. Olusola ◽  
D. A. L. Loch ◽  
K. Shukla ◽  
W. M. Cranton ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Surface ◽  
Cyclic Voltammogram ◽  
X Ray Diffraction ◽  
Cathodic Electrodeposition ◽  
Ternary Compounds ◽  
Treatment Conditions ◽  
Heat Treated ◽  
Vis Spectroscopy ◽  
P Type

AbstractGrowth of polycrystalline CdMnTe ternary compound thin films has been carried out using cathodic electrodeposition technique at different cathodic potentials. The range of the cathodic potentials used in this work has been chosen according to the cyclic voltammogram results. The CdMnTe thin films were electroplated from electrolyte containing CdSO4, TeO2 and MnSO4 in an acidic aqueous medium. Glass/fluorine-doped tin oxide (FTO) substrates have been used to electrodeposit the semiconductor layers. The structural, compositional, morphological, optical and electrical properties of the CdMnTe thin films were studied using X-ray diffraction (XRD), Sputtered neutral-mass spectroscopy (SNMS), Scanning electron microscopy (SEM), UV–Vis spectroscopy and Photo-electro-chemical (PEC) cell measurements respectively. The primarily grown as-deposited (AD) layers went through two different post-growth surface treatment conditions- heat-treated in air in the presence of CdCl2 (CCT) and heat-treated in air in the presence of GaCl3 (GCT). Results from the XRD indicated the polycrystalline nature of the electrodeposited films. The electroplated films have cubic crystal structures and the preferred orientation was found to be along the (111) plane of CdMnTe. Inclusion of Mn has been qualitatively observed using SNMS measurement. The optical energy bandgaps of the thin films were found to be varying between ~ 1.90 and ~ 2.20 eV. Though all the layers after post-treatment showed p-type electrical conduction, both p and n-type conductivity were obtained at different cathodic potentials for as-deposited materials. Comparison of the deposited layers to other electrodeposited ternary compounds has also been discussed.

scholarly journals Structural, electrical and optical properties of CdS thin films and the effect of annealing on photoconductivity

2019 ◽  
Vol 12 (25) ◽  
pp. 138-147
Author(s):  
Haidar Jwad Abdul-Ameer Al-Rehamey
Keyword(s):  
Thin Films ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Type Semiconductor ◽  
Cds Thin Films ◽  
Cds Films

Cadmium sulfide (CdS) thin films with n-type semiconductor characteristics were prepared by flash evaporating method on glass substrates. Some films were annealed at 250 oC for 1hr in air. The thicknesses of the films was estimated to be 0.5µ by the spectrometer measurement. Structural, morphological, electrical, optical and photoconductivity properties of CdS films have been investigated by X-ray diffraction, AFM, the Hall effect, optical transmittance spectra and photoconductivity analysis, respectively. X-ray diffraction (XRD) pattern shows that CdS films are in the stable hexagonal crystalline structure. Using Debye Scherrerś formula, the average grain size for the samples was found to be 26 nm. The transmittance of the samples was determined from optical trasmittance spectra. It is observed that the direct band gap energy for as deposited and annealed films are (2.55, 2.45) eV, respectively. The effect of annealing at 250 oC for 1hr in air on optical and photoconductivity of films under various intensity of illuminations (43.81 and 115.12) mW/cm2 was studied. The dark and photocurrents of the annealed films were found to be greater than that of as deposited.

scholarly journals Growth of the Electrodeposited NiX2 (X= Te, Se) Thin Films

2020 ◽  
pp. 55-69
Author(s):  
T. Joseph Sahaya Anand ◽  
Rajes K. M. Rajan ◽  
Md Radzai Said ◽  
Lau Kok Tee
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Compositional Analysis ◽  
Cost Effective ◽  
Xrd Analysis ◽  
Potential Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
P Type

Thin films of nickel chalcogenide, NiX2 (X= Te, Se) have been electrosynthesized on indium-tin-oxide (ITO) coated glass substrates. The films were characterized for their structural, morphological and compositional characteristics. Consisting of transition metals and chalcogenides (S, Se and Te), they show promising solar absorbent properties such as semiconducting band gap, well adhesion to substrate and good conversion with better cost-effective. Cyclic voltammetry experiments have been done prior to electrodeposition in order to get the electrodeposition potential range where the observable reduction range is between -0.9-(-1.1) V. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals that the films were adherent to the substrate with uniform and pin-hole free. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Ni, Te, and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of p-type material.

scholarly journals Effect of selenization time on optical, electrical properties and structure of CZTSSe thin films

2020 ◽  
Vol 5 (1) ◽  
pp. first
Author(s):  
Tuấn Anh Đào ◽  
Kiều Loan Phan Thị ◽  
Tuấn Hùng Lê Vũ ◽  
Hữu Kế Nguyễn
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Hole Concentration ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
Energy Hole ◽  
High Crystallinity ◽  
Photovoltaic Application ◽  
Coating Method ◽  
P Type

In this paper, we present a fabrication process of high crystallinity CZTSSe absorber layer. The CZTS structure is firstly prepared by spin-coating method, and then the film is converted into CZTSSe via selenization process using graphite box and tube furnace. The Se powder has been loaded into graphite box and used as source of selenizing vapors. Keeping the annealing temperature as constant, the structural, optical, electrical properties, and composition of CZTSSe thin films are investigated by changing the annealing time. X-ray diffraction revealed that these thin films are high crystallinity and strong preferential orientation along the (112) direction. The Raman spectra show the presence of the kesterite CZT Se phase which confirm the linkage of Se in structure. The band gaps (Eg) of the CZT Se thin films varied from 1,19 to 1.62 eV depend on the selenization times. At optimal annealing times, the p-type CZTSSe film has bandgap energy, hole concentration, and resistivity of 1,19 eV, 2,68 x 1019 cm-3 and 0,86Ω.cm respectively which are suitable for photovoltaic application.

scholarly journals Preparation and Properties of Superconducting thin Films by Excimer Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
Michael E. Geusic ◽  
Alan F. Stewart ◽  
Larry R. Pederson ◽  
William J. Weber ◽  
Kenneth R. Marken ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Substrate Surface ◽  
Xrd Analysis ◽  
Zero Field ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Excimer Laser Ablation

ABSTRACTExcimer laser ablation with an in situ heat treatment was used to prepare high quality superconducting YBa2Cu3O7−x thin films on (100)-SrTiO3 and (100)-LaAlO3 substrates. A pulsed excimer laser (XeCl; 308 nm) was used to ablate a rotating, bulk YBa2Cu3O7−x target at a laser energy density of 2–3 J/cm2. Based on four-probe dc resistance measurements, the films exhibited superconducting transition temperatures (Tc, midpoint) of 88 and 87K with 2K (90–10%) transition widths for SrTiO3 and LaAlO3, respectively. Transport critical current densities (Jc) measured at 77K were 2 × 106 and 1 × 106 A/cm2 in zero field for SrTiO3 and LaAlO3, respectively. X-ray diffraction (XRD) analysis showed the films to be highly oriented, with the c-axis perpendicular to the substrate surface.

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