scholarly journals ARATION AND CHARACTERIZATION POLY (VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE) COPOLYMER THIN FILMS FOR ORGANIC FERROELECTRIC FIELD EFFECT THIN FILM TRANSISTORS.

2015 ◽  
Vol 2 (1) ◽  
pp. 7-10
Author(s):  
Chandar Shekar B ◽  
Sulana Sundari ◽  
Sunnitha S ◽  
Sharmila C
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Polyvinylidene Fluoride ◽  
Vinylidene Fluoride ◽  
Piezoelectric Response ◽  
Amorphous Nature ◽  
Poly Vinylidene Fluoride

Polyvinylidene fluoride (PVDF) and Trifluoroethylene ((TrFE) are potential polymers which are used in acoustic transducers and electromechanical actuators because of their inherent piezoelectric response, as heat sensors because of their inherent pyroelectric response and as dielectric layer in organic thin filmtransistors. In the present study thin films of copolymer Poly(vinylidene fluoride-trifluoroethylene) were prepared by spin coating method for two different concentrations 2% to 8% and for various spin speeds from 2000 RPM to 5000 RPM. A P-type Si wafer was used as a substrate to deposit P(VDF-TrFE) thin films. 2-butanone was used as a solvent to prepare P(VDF-TrFE) solution. To study the annealing effect, the films were annealed for three different temperatures 50°C, 100° C and 175° C. Ellipsometry was used to measure the thickness of the films. The identification of the films prepared was done by using FTIR spectrophotometer. The structure of the films was studied by using small angle XRD. The morphology of the coated surface was investigated using SEM. It is observed that the thickness of the film coated depends on concentration, spin speed and annealing temperature. The XRD spectrum indicated the amorphous nature with crystallites of very low dimension. SEM micrographs also conforms the predominantly amorphous nature of the film surface. The observed smooth surface with amorphous structure indicated that these films could be used as dielectric layer in organic ferroelectric field effect thin film transistors.

Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride–trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors

2010 ◽  
Vol 49 (4) ◽  
pp. 04DJ06 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shin-Hyuk Yang ◽  
Chun-Won Byun ◽  
Sang-Hee Ko Park ◽  
Soon-Won Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Vinylidene Fluoride ◽  
Zno Thin Film ◽  
Poly Vinylidene Fluoride

Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures

2015 ◽  
Vol 15 (10) ◽  
pp. 7526-7530 ◽  
Author(s):  
Soon-Won Jung ◽  
Jae Bon Koo ◽  
Chan Woo Park ◽  
Bock Soon Na ◽  
Ji-Young Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Vinylidene Fluoride ◽  
Channel Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Poly Vinylidene Fluoride

In this study, stretchable organic–inorganic hybrid thin-film transistors (TFTs) are fabricated on a polyimide (PI) stiff-island/elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and oxide semiconductor In-Ga-Zn-O as the gate dielectric and semiconducting layer, respectively. Carrier mobility, Ion/Ioff ratio, and subthreshold swing (SS) values of 6.1 cm2 V−1 s−1, 107, and 0.2 V/decade, respectively, were achieved. For the hybrid TFTs, the endurable maximum strain without degradation of electrical properties was approximately 49%. These results correspond to those obtained in the first study on fabrication of stretchable hybrid-type TFTs on elastomer substrate using an organic gate insulator and oxide semiconducting active channel structure, thus indicating the feasibility of a promising device for stretchable electronic systems.

scholarly journals Static-Aligned Piezoelectric Poly (Vinylidene Fluoride) Electrospun Nanofibers/MWCNT Composite Membrane: Facile Method

Polymers ◽  
2018 ◽  
Vol 10 (9) ◽  
pp. 965 ◽  
Author(s):  
Nader Shehata ◽  
Eman Elnabawy ◽  
Mohamed Abdelkader ◽  
Ahmed Hassanin ◽  
Mohamed Salah ◽  
...  
Keyword(s):  
Polyvinylidene Fluoride ◽  
High Speed ◽  
Vinylidene Fluoride ◽  
Electrospun Nanofibers ◽  
Piezoelectric Response ◽  
Rotating Drum ◽  
Β Phase ◽  
Aligned Nanofibers ◽  
Poly Vinylidene Fluoride ◽  
Nanofiber Mats

Polyvinylidene Fluoride (PVDF) piezoelectric electrospun nanofibers have been intensively used for sensing and actuation applications in the last decade. However, in most cases, random PVDF piezoelectric nanofiber mats have moderate piezoelectric response compared to aligned PVDF nanofibers. In this work, we demonstrate the effect of alignment conducted by a collector setup composed of two-metal bars with gab inside where the aligned fiber can be formed. That is what we called static aligned nanofibers, which is distinct from the dynamic traditional technique using a high speed rotating drum. The two-bar system shows a superior alignment degree for the PVDF nanofibers. Also, the effect of added carbon nanotubes (CNTs) of different concentrations to PVDF nanofibers is studied to observe the enhancement of piezoelectric response of PVDF nanofibers. Improvement of β-phase content of aligned (PVDF) nanofibers, as compared to randomly orientated fibers, is achieved. Significant change in the piezoelectricity of PVDF fiber is produced with added CNTs with saturation response in the case of 0.3 wt % doping of CNTs, and piezoelectric sensitivity of 73.8 mV/g with applied masses down to 100 g.

Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates

2015 ◽  
Vol 15 (10) ◽  
pp. 7513-7517 ◽  
Author(s):  
Soon-Won Jung ◽  
Jae Bon Koo ◽  
Chan Woo Park ◽  
Bock Soon Na ◽  
Ji-Young Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectric ◽  
Vinylidene Fluoride ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Bending Radius ◽  
Voltage Swing

In this study, we fabricated flexible organic thin-film transistors (OTFTs) on a polydimethysiloxane (PDMS) elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and amorphous conjugated polymer poly(9,9- dioctylfuorene-co-bithiophene) (F8T2) as the gate dielectric and semiconducting layer, respectively. All the processes were performed at elastomer-compatible temperatures of below 100 °C. We confirmed the basic properties of the P(VDF-TrFE):PMMA blend film on the PDMS substrate, and the characteristics of the fabricated flexible OTFTs were also evaluated. A subthreshold voltage swing of 2.5 V/decade, an Ion/Ioff ratio greater than 105, field-effect mobility of 1.2×10−3 cm2 V−1 s−1, and a 10−11 A gate leakage current were obtained. These characteristics did not degrade at a bending radius of 1 cm. For the OTFTs, the endurable maximum strain without degradation in the field-effect mobility of the PDMS elastomers was approximately 2%.

Leakage and Transconductance in Polysilicon Thin Film Transistors: Effect of Grain Boundary Hydrogenation

1987 ◽  
Vol 106 ◽  
Author(s):  
Feng Qian ◽  
Dae M. Kim ◽  
Galen H. Kawamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Point Of View ◽  
Boundary Properties

ABSTRACTThe n- and p-channel field effect transistors are fabricated in as-deposited and grain boundary passivated polysilicon thin films. The performance of these thin film transistors (TFT's) is characterized and compared. Specifically, the transconductance and leakage behavior are discussed in detail in correlation with the grain boundary properties. The I-V characteristics are modeled from a unified point of view.

Sign in / Sign up

Export Citation Format

Share Document