WIDEBAND ON-CHIP K-BAND RF FRONT-END FOR VEHICULAR FMCW RADAR APPLICATIONS IN 0.18 μM CMOS PROCESS

2010 ◽  
Vol 17 ◽  
pp. 145-162 ◽  
Author(s):  
Han-Yeol Yu ◽  
Sung-Sun Choi ◽  
Yong-Hoon Kim
Keyword(s):  
Cmos Process ◽  
Fmcw Radar ◽  
Front End ◽  
Rf Front End ◽  
Radar Applications ◽  
On Chip ◽  
K Band

Design of a Digital Baseband Processor for UHF Tags

Electronics ◽  
2021 ◽  
Vol 10 (17) ◽  
pp. 2060
Author(s):  
Na Bai ◽  
Liang Wang ◽  
Yaohua Xu ◽  
Yi Wang
Keyword(s):  
Data Processing ◽  
Low Voltage ◽  
Random Number Generator ◽  
Digital Circuit ◽  
Cmos Process ◽  
Front End ◽  
Rf Front End ◽  
Machine Module ◽  
Baseband Processor ◽  
Digital Baseband

In this paper, we present a new digital baseband processor for UHF tags. It is a low-power and low-voltage digital circuit and adopts the Chinese military standard protocol GJB7377.1. The processor receives data or commands from the RF front-end and carries out various functions, such as receiving and writing data to memory, reading and sending memory data to the RF front-end and killing tags. The processor consists of thirteen main sub-modules: TPP decoding, clock management, random number generator, power management, memory controller, cyclic redundancy check, FM0 encoding, input data processing, output data processing, command detection module, initialization module, state machine module and controller. We use ModelSim for the TPP decoding simulation and communication simulation between tag and reader, and the simulation results meet the design requirements. The processor can be applied to UHF tags and has been taped out using a TSMC 0.18 um CMOS process.

scholarly journals A Linearity Improvement Front End with Subharmonic Current Commutating Passive Mixer for 2.4 GHz Direct Conversion Receiver in 0.13 μm CMOS Technology

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1369
Author(s):  
Dongquan Huo ◽  
Luhong Mao ◽  
Liji Wu ◽  
Xiangmin Zhang
Keyword(s):  
Power Consumption ◽  
Flicker Noise ◽  
Analytical Formula ◽  
Direct Conversion ◽  
Low Noise ◽  
Cmos Process ◽  
Passive Mixer ◽  
Dc Offset ◽  
Front End ◽  
Rf Front End

Direct conversion receiver (DCR) architecture is a promising candidate in the radio frequency (RF) front end because of its low power consumption, low cost and ease of integration. However, flicker noise and direct current (DC) offset are large issues. Owing to the local oscillator (LO) frequency, which is half of the RF frequency, and the absence of a DC bias current that introduces no flicker noise, the subharmonic passive mixer (SHPM) core topology front end overcomes the shortcoming effectively. When more and more receivers (RX) and transmitters (TX) are integrated into one chip, the linearity of the receiver front end becomes a very important performer that handles the TX and RX feedthrough. Another reason for the requirement of good linearity is the massive electromagnetic interference that exists in the atmosphere. This paper presents a linearity-improved RF front end with a feedforward body bias (FBB) subharmonic mixer core topology that satisfies modern RF front end demands. A novel complementary derivative superposition (DS) method is presented in low noise amplifier (LNA) design to cancel both the third- and second-order nonlinearities. To the best knowledge of the authors, this is the first time FBB technology is used in the SHPM core to improve linearity. A Volterra series is introduced to provide an analytical formula for the FBB of the SHPM core. The design was fabricated in a 0.13 μm complementary metal oxide semiconductor (CMOS) process with a chip area of 750 μm × 1270 μm. At a 2.4 GHz working frequency, the measurement result shows a conversion gain of 36 dB, double side band (DSB) noise figure (NF) of 6.8 dB, third-order intermodulation intercept point (IIP3) of 2 dBm, LO–RF isolation of 90 dB and 0.8 mW DC offset with 14.4 mW power consumption at 1.2 V supply voltage. These results exhibit better LO–RF feedthrough and DC offset, good gain and NF, moderate IIP3 and the highest figure of merit compared to the state-of-the-art publications.

K-band FMCW radar CMOS front-end ICs with 13.3 dBm output power

2014 ◽  
Author(s):  
Gitae Pyo ◽  
Jaemo Yang ◽  
Hyunji Ku ◽  
Choul-Young Kim ◽  
Songcheol Hong
Keyword(s):  
Output Power ◽  
Fmcw Radar ◽  
Front End ◽  
K Band

A 1.2-V RF Front-End With On-Chip VCO for PCS 1900 Direct Conversion Receiver in 0.13-<tex>$mu$</tex>m CMOS

2006 ◽  
Vol 41 (2) ◽  
pp. 384-394 ◽  
Author(s):  
P. Sivonen ◽  
J. Tervaluoto ◽  
N. Mikkola ◽  
A. Parssinen
Keyword(s):  
Direct Conversion ◽  
Front End ◽  
Rf Front End ◽  
On Chip

A 2V 0.35μm CMOS DECT RF front end with on-chip frequency synthesizer

2005 ◽  
Author(s):  
D. Guermandi ◽  
E. Franchi ◽  
A. Gnudi ◽  
P. Rossi ◽  
F. Svelto ◽  
...  
Keyword(s):  
Frequency Synthesizer ◽  
Front End ◽  
Rf Front End ◽  
On Chip

scholarly journals Lamb Wave AlN Micromechanical Filters Integrated With On-chip Capacitors for RF Front-End Architectures

2015 ◽  
Vol 3 (4) ◽  
pp. 361-364 ◽  
Author(s):  
Ji Liang ◽  
Hongxiang Zhang ◽  
Daihua Zhang ◽  
Hao Zhang ◽  
Wei Pang
Keyword(s):  
Lamb Wave ◽  
Front End ◽  
Rf Front End ◽  
Micromechanical Filters ◽  
On Chip
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