A New Glow-Discharge Method for Flow Visualization in Supersonic Wind Tunnels

1958 ◽  
Vol 25 (11) ◽  
pp. 727-728 ◽  
Author(s):  
Herbert J. Bomelburg
Keyword(s):  
Glow Discharge ◽  
Flow Visualization ◽  
Wind Tunnels ◽  
Discharge Method

Electrical and Optical Properties of Oxygenated Microcrystalline Silicon (mc-Si:O:H)

1992 ◽  
Vol 242 ◽  
Author(s):  
M. Faraji ◽  
Sunil Gokhale ◽  
S. M. Chaudhari ◽  
M. G. Takwale ◽  
S. V. Ghaisas
Keyword(s):  
Optical Properties ◽  
Glow Discharge ◽  
Silicon Surface ◽  
Volume Fraction ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Electrical And Optical Properties ◽  
Radio Frequency Glow Discharge ◽  
Absorption Studies ◽  
Discharge Method

ABSTRACTHydrogenated microcrystalline silicon with oxygen(mc-Si:O:H) is grown using radio frequency glow discharge method. Oxygen is introduced during growth by varying it's partial pressure in the growth chamber. The crystalline volume fraction ‘f’ and the crystallite size ‘δ’ are found to vary with the oxygen content. Results indicate that oxygen can etch the silicon surface when present in low amount while it forms a-SiO2-x with increasing contents. Optical absorption studies in the range of 2 to 3 eV suggest that the absorption coefficient ‘α’ lies in between the values of c-Si and a-Si:H.being closer to a-Si:H. The Hall mobility measurements for these samples indicate that for optimum oxygen contents the mobility as high as 35 cm2 V-1 sec-1 can be obtained. Results on I-V characteristics for p-i-n structure are presented.

Defect Properties of Cathode Deposited Glow Discharge Amorphous Silicon Germanium Alloys

1995 ◽  
Vol 377 ◽  
Author(s):  
Fan Zhong ◽  
Chih-Chiang Chen ◽  
J. David Cohen ◽  
Paul Wickboldt ◽  
William Paul
Keyword(s):  
Glow Discharge ◽  
Silicon Germanium ◽  
Defect Formation ◽  
Optical Spectra ◽  
Drive Level ◽  
Formation Model ◽  
Energy Distributions ◽  
Amorphous Silicon Germanium ◽  
Discharge Method ◽  
Defect Densities

ABSTRACTWe have characterized the deep defect densities and their energy distributions for a series of a-Si1-xGex:H alloys with large Ge content (0.57< × < 1.00) prepared by the cathode deposited glow discharge method. Our results indicate markedly superior properties for these samples. A small Urbach tail slope (about 45meV) was found for all samples in this alloy range. The defect densities were either obtained directly from the drive-level capacitance profiling or deduced from the sub-band-gap optical spectra. Both are substantially lower than the trend line determined from previous studies of a-Si1-xGex:H samples produced by conventional glow discharge and by Photo-CVD methods. However, the relation between the total defect densities and the optical spectra in the cathodic samples obeys the same defect formation model that has been used to successfully predict the defect densities in other types of a-Si1-xGex:H material.

Glow-discharge flow visualization in low-density free jets

1973 ◽  
Vol 10 (10) ◽  
pp. 658-662 ◽  
Author(s):  
S. S. FISHER ◽  
D. BHARATHAN
Keyword(s):  
Glow Discharge ◽  
Flow Visualization ◽  
Low Density ◽  
Free Jets ◽  
Discharge Flow
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