In-situ Laser Diagnostics of Pentane Oxidation and Pyrolysis in Nanosecond-pulsed Plasma Discharges

2018 ◽  
Author(s):  
Aric C. Rousso ◽  
Xingqian Mao ◽  
Yiguang Ju
Keyword(s):  
Laser Diagnostics ◽  
Pulsed Plasma ◽  
Plasma Discharges

In Situ Regeneration of Au Nanocatalysts by Atmospheric-Pressure Air Plasma: Regeneration Characteristics of Square-Wave Pulsed Plasma

2017 ◽  
Vol 60 (12-14) ◽  
pp. 914-924 ◽  
Author(s):  
Bin Zhu ◽  
Jing-Lin Liu ◽  
Xiao-Song Li ◽  
Jin-Bao Liu ◽  
Xiaobing Zhu ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Pulsed Plasma ◽  
Air Plasma ◽  
Square Wave ◽  
In Situ Regeneration

In situ laser diagnostics of nanoparticle transport across stagnation plane in a counterflow flame

2017 ◽  
Vol 105 ◽  
pp. 145-150 ◽  
Author(s):  
Yiyang Zhang ◽  
Zihao Wang ◽  
Xinxin Wu ◽  
Libin Sun ◽  
Zhengming Zhang ◽  
...  
Keyword(s):  
Laser Diagnostics ◽  
Nanoparticle Transport ◽  
Counterflow Flame ◽  
Stagnation Plane

High Resolution Laser Diagnostics for Direct Gap Semiconductor Materials

1982 ◽  
Vol 17 ◽  
Author(s):  
R.P. Salathe ◽  
H.H. Gilgen
Keyword(s):  
Laser Processing ◽  
Carrier Density ◽  
Laser Diagnostics ◽  
Band Gap Energy ◽  
Semiconductor Materials ◽  
Inhomogeneous Distribution ◽  
Gap Energy ◽  
Ion Laser ◽  
Focal Zone

ABSTRACTThe laser-induced luminescence of direct gap semiconductors can be measured with high spatial (1 μm) and temporal (< 1 ns) resolution. A profiling technique is described for in-situ measurements during laser processing. It allows the evaluation of temperature, carrier density and band gap energy within the focal zone. The technique has been applied to (Al,Ga)As heterostructure material subjected to highly focused cw-Kr-ion laser radiation. The measurements reveal low temperature rises (<200 deg.C) at high excitation densities (>1kw/cm2) and an inhomogeneous distribution of optically excited carriers for concentrations above 2.1017 cm−3.

Capacitance-Voltage Characterization of Pulsed Plasma Polymerized Allylamine Dielectrics

2002 ◽  
Vol 736 ◽  
Author(s):  
Yifan Xu ◽  
Paul Berger ◽  
Jai Cho ◽  
Richard B. Timmons
Keyword(s):  
Heat Treatment ◽  
Dielectric Constant ◽  
Film Deposition ◽  
Pulsed Plasma ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Heat Treated ◽  
Capacitance Voltage ◽  
Mobile Ions

ABSTRACTPolyallylamine films, deposited on Si wafers by radio frequency (RF) pulsed plasma polymerization (PPP), were employed as insulating layers of metal-insulator-semiconductor (MIS) capacitors. The insulating polymer films were deposited at substrate temperatures of 25°C and 100°C. Multiple frequency capacitance-voltage (C-V) measurements indicated that an in-situ heat treatment during film deposition increased the insulator dielectric constant. The dielectric constant, calculated from the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. For both sample sets, the I-V data demonstrate a low leakage current value (<20fA) up to 100V with an area of 0.0307 mm2, resulting in a current density of <0.65 pA/mm2. Hysteresis in the C-V curves with differing sweep directions was more pronounced for in-situ heat-treated samples indicative of positive mobile ions.

Sign in / Sign up

Export Citation Format

Share Document