Reduced Order Models for a High Speed Jet with Time-Resolved PIV

Author(s):  
Zachary Berger ◽  
Kerwin Low ◽  
Matthew Berry ◽  
Mark Glauser ◽  
Stanislav Kostka ◽  
...  
2012 ◽  
Vol 78 (796) ◽  
pp. 3894-3903
Author(s):  
Sachio KOBAYASHI ◽  
Hiroki KOBAYASHI ◽  
Hiroshi IKEDA ◽  
Masayoshi HASHIMA ◽  
Yuichi SATO

Author(s):  
Oleg Bostanjoglo ◽  
Peter Thomsen-Schmidt

Thin GexTe1-x (x = 0.15-0.8) were studied as a model substance of a composite semiconductor film, in addition being of interest for optical storage material. Two complementary modes of time-resolved TEM were used to trace the phase transitions, induced by an attached Q-switched (50 ns FWHM) and frequency doubled (532 nm) Nd:YAG laser. The laser radiation was focused onto the specimen within the TEM to a 20 μm spot (FWHM). Discrete intermediate states were visualized by short-exposure time doubleframe imaging /1,2/. The full history of a transformation was gained by tracking the electron image intensity with photomultiplier and storage oscilloscopes (space/time resolution 100 nm/3 ns) /3/. In order to avoid radiation damage by the probing electron beam to detector and specimen, the beam is pulsed in this continuous mode of time-resolved TEM,too.Short events ( <2 μs) are followed by illuminating with an extended single electron pulse (fig. 1c)


AIAA Journal ◽  
1999 ◽  
Vol 37 ◽  
pp. 1318-1325 ◽  
Author(s):  
Michael I. Friswell ◽  
Daniel J. Inman

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