Experimental study of on-orbit correction for beam direction variation of large reflector antenna

The technique of convergent-beam electron diffraction (CBED) has been established. However there is a distinct discrepancy concerning the CBED pattern symmetries associated with translation symmetries parallel to the incident beam direction: Buxton et al. assumed no detectable effects of translation components, while Goodman predicted no associated symmetries. In this report a procedure used by Gjønnes & Moodie1 to obtain dynamical extinction rules will be extended in order to derive the CBED pattern symmetries as well as the dynamical extinction rules.

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Low-Loss Images in a Stem/Tem Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009244x ◽

1976 ◽

Vol 34 ◽

pp. 496-497 ◽

Cited By ~ 1

Author(s):

David C. Joy ◽

Dennis M. Maher

Keyword(s):

High Resolution ◽

Surface Topography ◽

Beam Direction ◽

Low Loss ◽

Specimen Holder ◽

Glancing Angle ◽

High Resolution Images ◽

Set Up ◽

Conventional Manner ◽

Objective Type

High-resolution images of the surface topography of solid specimens can be obtained using the low-loss technique of Wells. If the specimen is placed inside a lens of the condenser/objective type, then it has been shown that the lens itself can be used to collect and filter the low-loss electrons. Since the probeforming lenses in TEM instruments fitted with scanning attachments are of this type, low-loss imaging should be possible.High-resolution, low-loss images have been obtained in a JEOL JEM 100B fitted with a scanning attachment and a thermal, fieldemission gun. No modifications were made to the instrument, but a wedge-shaped, specimen holder was made to fit the side-entry, goniometer stage. Thus the specimen is oriented initially at a glancing angle of about 30° to the beam direction. The instrument is set up in the conventional manner for STEM operation with all the lenses, including the projector, excited.

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Experimental study on the restoration from a tilt-azimuth series for improvement in resolution

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010013955x ◽

1995 ◽

Vol 53 ◽

pp. 636-637

Author(s):

Norio Baba ◽

Norihiko Ichise ◽

Syunya Watanabe

Keyword(s):

Experimental Study ◽

Spherical Aberration ◽

Incident Beam ◽

Optical Parameters ◽

Beam Tilting ◽

Illumination Method ◽

Restoration Method ◽

Illumination Mode

The tilted beam illumination method is used to improve the resolution comparing with the axial illumination mode. Using this advantage, a restoration method of several tilted beam images covering the full azimuthal range was proposed by Saxton, and experimentally examined. To make this technique more reliable it seems that some practical problems still remain. In this report the restoration was attempted and the problems were considered. In our study, four problems were pointed out for the experiment of the restoration. (1) Accurate beam tilt adjustment to fit the incident beam to the coma-free axis for the symmetrical beam tilting over the full azimuthal range. (2) Accurate measurements of the optical parameters which are necessary to design the restoration filter. Even if the spherical aberration coefficient Cs is known with accuracy and the axial astigmatism is sufficiently compensated, at least the defocus value must be measured. (3) Accurate alignment of the tilt-azimuth series images.

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Characterization of Rh/Si multilayer structure by HREM and HAADF

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100121016 ◽

1992 ◽

Vol 50 (1) ◽

pp. 122-123

Author(s):

Y. Cheng ◽

J. Liu ◽

M.B. Stearns ◽

D.G. Steams

Keyword(s):

Normal Incidence ◽

High Resolution Electron Microscopy ◽

X Rays ◽

Beam Direction ◽

Cross Sectional ◽

Optical Elements ◽

Resolution Electron ◽

Point To Point ◽

Better Than

The Rh/Si multilayer (ML) thin films are promising optical elements for soft x-rays since they have a calculated normal incidence reflectivity of ∼60% at a x-ray wavelength of ∼13 nm. However, a reflectivity of only 28% has been attained to date for ML fabricated by dc magnetron sputtering. In order to determine the cause of this degraded reflectivity the microstructure of this ML was examined on cross-sectional specimens with two high-resolution electron microscopy (HREM and HAADF) techniques.Cross-sectional specimens were made from an as-prepared ML sample and from the same ML annealed at 298 °C for 1 and 100 hours. The specimens were imaged using a JEM-4000EX TEM operating at 400 kV with a point-to-point resolution of better than 0.17 nm. The specimens were viewed along Si [110] projection of the substrate, with the (001) Si surface plane parallel to the beam direction.

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Fast calibration of CBED patterns for quantitative analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100149209 ◽

1993 ◽

Vol 51 ◽

pp. 674-675

Author(s):

M.A. Gribelyuk ◽

M. Rühle

Keyword(s):

Reciprocal Lattice ◽

Accurate Determination ◽

Incident Beam ◽

Crystal Thickness ◽

Structure Model ◽

Beam Direction ◽

Transmitted Beam ◽

Reciprocal Vector ◽

On Line

A new method is suggested for the accurate determination of the incident beam direction K, crystal thickness t and the coordinates of the basic reciprocal lattice vectors V1 and V2 (Fig. 1) of the ZOLZ plans in pixels of the digitized 2-D CBED pattern. For a given structure model and some estimated values Vest and Kest of some point O in the CBED pattern a set of line scans AkBk is chosen so that all the scans are located within CBED disks.The points on line scans AkBk are conjugate to those on A0B0 since they are shifted by the reciprocal vector gk with respect to each other. As many conjugate scans are considered as CBED disks fall into the energy filtered region of the experimental pattern. Electron intensities of the transmitted beam I0 and diffracted beams Igk for all points on conjugate scans are found as a function of crystal thickness t on the basis of the full dynamical calculation.

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Voltage-center COMA-free alignment for high-resolution Electron Microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010016978x ◽

1994 ◽

Vol 52 ◽

pp. 410-411

Author(s):

K. Ishizuka ◽

K. Shirota

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Incident Beam ◽

Chromatic Aberration ◽

High Resolution Electron Microscopy ◽

Beam Deflection ◽

Objective Lens ◽

Main Magnetic Field ◽

Beam Direction ◽

Resolution Electron

In a conventional alignment for high-resolution electron microscopy, the specimen point imaged at the viewing-screen center is made dispersion-free against a voltage fluctuation by adjusting the incident beam direction using the beam deflector. For high-resolution works the voltage-center alignment is important, since this alignment reduces the chromatic aberration. On the other hand, the coma-free alignment is also indispensable for high-resolution electron microscopy. This is because even a small misalignment of the incident beam direction induces wave aberrations and affects the appearance of high resolution electron micrographs. Some alignment procedures which cancel out the coma by changing the incident beam direction have been proposed. Most recently, the effect of a three-fold astigmatism on the coma-free alignment has been revealed, and new algorithms of coma-free alignment have been proposed.However, the voltage-center and the coma-free alignments as well as the current-center alignment in general do not coincide to each other because of beam deflection due to a leakage field within the objective lens, even if the main magnetic-field of the objective lens is rotationally symmetric. Since all the proposed procedures for the coma-free alignment also use the same beam deflector above the objective lens that is used for the voltage-center alignment, the coma-free alignment is only attained at the sacrifice of the voltage-center alignment.

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